[특허]InP based long wavelength VCSEL

[미국특허] InP based long wavelength VCSEL 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01S-005/00 H01S-003/08
출원번호	US-0606104 (2003-06-25)
등록번호	US-7433381 (2008-10-07)
발명자 / 주소	Wang,Tzu Yu Kwon,Hoki Ryou,Jae Hyun Park,Gyoungwon Kim,Jin K.
출원인 / 주소	Finisar Corporation
대리인 / 주소	Workman Nydegger
인용정보	피인용 횟수 : 3 인용 특허 : 187

초록 ▼

A long wavelength vertical cavity surface emitting laser having a substrate, a first mirror situated on the substrate, an active region situated on the first mirror, a second mirror situated on the active region. The first mirror may have several pairs of layers with an oxidized layer in one or more pairs of that mirror. The substrate may include InP and the mirror components may be compatible with the InP. The one or more layers in the first mirror may be oxidized via a trench-like approach or other arrangement.

대표청구항 ▼

What is claimed is: 1. A long wavelength vertical cavity surface emitting laser comprising: a substrate; a first mirror proximate said substrate and having a plurality of layers including at least one pair of layers having a non-oxidized AlGaInAs layer and an oxidized layer, wherein the oxidized layer comprises at least one of oxidized InGaAsP, InAlAs, InAlGaAs, AlAsSb, AlGaAsSb, AlGaPSb or AlPSb; a cavity proximate to said first mirror; a second mirror proximate to said cavity, said second mirror comprising a partially oxidized layer for confining current; and at least two contacts configured to cause current to flow through at least a portion of the vertical cavity surface emitting laser. 2. The laser of claim 1, wherein said first mirror is proximate to an InP substrate. 3. The laser of claim 1, wherein said second mirror comprises a plurality of layers having at least one InP layer. 4. The laser of claim 1, wherein said cavity has at least one quantum well. 5. The laser of claim 4, wherein the at least one quantum well is configured to emit energy at a wavelength greater than 1200 nm. 6. The laser of claim 1, further comprising: a first electrical contact on said second mirror; and a second electrical contact on the substrate. 7. The laser of claim 1, further comprising: an intra-cavity contact layer situated between said first mirror and said cavity; a first contact on said second mirror; and a second contact on said intra-cavity contact layer. 8. The laser of claim 1, wherein the plurality of layers of the first mirror has six or fewer pairs of layers.

이 특허에 인용된 특허 (187) 인용/피인용 타임라인 분석

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Julien Boucart ; Constance Chang-Hasnain ; Michael Jansen ; Rashit Nabiev ; Wupen Yuen, Vertical cavity apparatus with tunnel junction.
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Julien Boucart ; Constance Chang-Hasnain ; Michael Jansen ; Rashit Nabiev ; Wupen Yuen, Vertical cavity apparatus with tunnel junction.
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Julien Boucart ; Constance Chang-Hasnain ; Michael Jansen ; Rashit Nabiev ; Wupen Yuen, Vertical cavity apparatus with tunnel junction.
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Julien Boucart ; Constance Chang-Hasnain ; Michael Jansen ; Rashit Nabiev ; Wupen Yuen, Vertical cavity apparatus with tunnel junction.
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Julien Boucart ; Constance Chang-Hasnain ; Michael Jansen ; Rashit Nabiev ; Wupen Yuen, Vertical cavity apparatus with tunnel junction.
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Julien Boucart ; Constance Chang-Hasnain ; Michael Jansen ; Rashit Nabiev ; Wupen Yuen, Vertical cavity apparatus with tunnel junction.
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Anthony Philip J. (Bridgewater NJ) Chirovsky Leo M. F. (Bridgewater NJ) D\Asaro Lucian A. (Madison NJ) Mattera Vincent D. (Flemington NJ) Morgan Robert A. (Topton PA), Vertical cavity laser with mirror having controllable reflectivity.
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Sirbu, Alexei; Iakovlev, Vladimir; Rudra, Alok; Kapon, Elyahou, Vertical cavity surface emitting laser and a method of fabrication thereof.
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Shieh Chan-Long (Paradise Valley AZ) Lebby Michael S. (Apache Junction AZ) Lee Hsing-Chung (Calabasas CA) Grodzinski Piotr (Chandler AZ), Vertical cavity surface emitting laser having continuous grading.
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Frederick G. Johnson ; Bikash Koley ; Linda M. Wasiczko, Vertical cavity surface emitting laser with oxidized strain-compensated superlattice of group III-V semiconductor.
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Shinagawa, Tatsuyuki; Iwai, Norihiro; Yokouchi, Noriyuki, Vertical cavity surface emitting semiconductor laser device.
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Magnusson Robert ; Young Preston P. ; Shin Dongho, Vertical-cavity laser and laser array incorporating guided-mode resonance effects and method for making the same.
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Jewell Jack L. (Boulder CO) Olbright Gregory R. (Boulder CO), Vertical-cavity surface emitting laser assay display system.
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Ohiso Yoshitaka,JPX ; Itoh Yoshio,JPX ; Amano Chikara,JPX ; Kohama Yoshitaka,JPX ; Tateno Kouta,JPX ; Takenouchi Hirokazu,JPX ; Kurokawa Takashi,JPX, Vertical-cavity surface-emitting laser and method for manufacturing the same.
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Hadley G. Ronald ; Lear Kevin L. ; Awyoung Adelbert ; Choquette Kent D., Vertical-cavity surface-emitting laser device.
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Wang Shih-Yuan ; Tan Michael R. T. ; Holland William D. ; Ertel John P. ; Corzine Scott W., Vertical-cavity surface-emitting laser generating light with a defined direction of polarization.
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Jewell Jack L. (Boulder CO) Olbright Gregory (Boulder CO), Vertical-cavity surface-emitting lasers with intra-cavity structures.
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Kobayashi Yasuhiro (Osaka JPX) Chino Toyoji (Toyonaka JPX) Matsuda Kenichi (Moriguchi JPX), Vertical-cavity surface-emitting semiconductor laser.
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Bryan Robert P. (Boulder CO) Olbright Gregory R. (Boulder CO) Lott James A. (Albuquerque NM) Schneider ; Jr. Richard P. (Albuquerque NM), Visible light emitting vertical cavity surface emitting lasers.
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Olbright Gregory R. (Boulder CO) Jewell Jack L. (Boulder CO), Visible light surface emitting semiconductor laser.
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Olbright Gregory R. (Boulder CO) Jewell Jack L. (Bridgewater NJ), Visible light surface emitting semiconductor laser.
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Uebbing, John J., Wafer bonded vertical cavity surface emitting laser systems.
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Kish Fred A. (San Jose CA) Steranka Frank M. (San Jose CA) DeFevere Dennis C. (Palo Alto CA) Robbins Virginia M. (Los Gatos CA) Uebbing John (Palo Alto CA), Wafer bonding of light emitting diode layers.
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Thornton Robert L., Wavelength and polarization multiplexed vertical cavity surface emitting lasers.
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MacDonald Robert I. (Ottawa CAX), Wavelength selective optical coupler.
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Yu-Hwa Lo ; Steven Gregg Hummel ; Chenting Lin ; Chau-Hong Kuo ; Mei-Ling Shek-Stefan ; Sergey V. Zaytsev, Wavelength-tunable semiconductor laser diode.
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이 특허를 인용한 특허 (3) 인용/피인용 타임라인 분석

Graham, Luke; MacInnes, Andy, Etched planarized VCSEL.
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Shiga, Toshihiko; Sakuma, Hitoshi, Method for manufacturing semiconductor optical device.
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Hatakeyama, Hiroshi, Surface emitting laser.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

내보내기 구분	파일저장 인쇄 메일전송
구성항목	기본정보 상세정보 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표IPC 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 공고번호, 공고일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표출원인, 출원인국적, 출원인주소, 발명자, 발명자E, 발명자코드, 발명자주소, 발명자 우편번호, 발명자국적, 대표IPC, IPC코드, 요약, 미국특허분류, 대리인주소, 대리인코드, 대리인(한글), 대리인(영문), 국제공개일자, 국제공개번호, 국제출원일자, 국제출원번호, 우선권, 우선권주장일, 우선권국가, 우선권출원번호, 원출원일자, 원출원번호, 지정국, Citing Patents, Cited Patents
저장형식	Text(ASCII format) Excel format PIAS분석(.xls)
메일정보	받는사람 (필수) @ 보내는사람 (선택) @ 제목 내용 KISTI 검색결과 이메일 서비스
안내	총 건의 자료가 검색되었습니다. 다운받으실 자료의 인덱스를 입력하세요. (1-10,000) 검색결과의 순서대로 최대 10,000건 까지 다운로드가 가능합니다. 데이타가 많을 경우 속도가 느려질 수 있습니다.(최대 2~3분 소요) 다운로드 파일은 UTF-8 형태로 저장됩니다. 파일의 내용이 제대로 보이지 않을실 때는 웹브라우저 상단의 보기 -> 인코딩 -> 자동선택 여부를 확인하십시오. ~ Text(ASCII format) Excel format

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[미국특허] InP based long wavelength VCSEL 원문보기

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이 특허에 인용된 특허 (187) 인용/피인용 타임라인 분석

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[미국특허] InP based long wavelength VCSEL 원문보기

초록 ▼

대표청구항 ▼

연구과제 타임라인

전체(0) 논문(0) 특허(0) 보고서(0)

전체(0) 논문(0) 특허(0) 보고서(0)

이 특허에 인용된 특허 (187) 인용/피인용 타임라인 분석

이 특허를 인용한 특허 (3) 인용/피인용 타임라인 분석

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