IPC분류정보
| 국가/구분 |
United States(US) Patent
등록
|
| 국제특허분류(IPC7판) |
|
| 출원번호 |
US-0010578
(2004-12-14)
|
| 등록번호 |
US-7434476
(2008-10-14)
|
|
발명자
/ 주소 |
- Tang,Hongxing
- Li,Mo
- Roukes,Michael L.
|
| 출원인 / 주소 |
- Califronia Institute of Technology
|
| 대리인 / 주소 |
|
| 인용정보 |
피인용 횟수 :
4 인용 특허 :
22 |
초록
Thin metallic films are used as the piezoresistive self-sensing element in microelectromechanical and nanoelectromechanical systems. The specific application to AFM probes is demonstrated.
대표청구항
▼
The invention claimed is: 1. An AFM probe comprising 1) a movable cantilever, 2) a piezoresistive sensing element configured to sense a movement of the cantilever, said piezoresistive sensing element comprising a thin metal film, and 3) an AFM tip on a first surface of the cantilever, wherein the c
The invention claimed is: 1. An AFM probe comprising 1) a movable cantilever, 2) a piezoresistive sensing element configured to sense a movement of the cantilever, said piezoresistive sensing element comprising a thin metal film, and 3) an AFM tip on a first surface of the cantilever, wherein the cantilever extends from a base in a first direction and at least a portion of the thin metal film extends in the first direction. 2. The device of claim 1, wherein the cantilever comprises a semiconductor material. 3. The device of claim 1, wherein the thin metal film is coated on a surface of the cantilever. 4. The device of claim 3, wherein the cantilever comprises a notch and leg portions surrounding the notch, and the metal film is located at least on the leg portions of the cantilever. 5. The device of claim 4, wherein the notch comprises a hole through the cantilever located adjacent to a base of the cantilever. 6. The device of claim 1, wherein the thin metal film is located on the first surface of the cantilever. 7. The device of claim 1, wherein the thin metal film is located on a second surface of the cantilever which is opposite to the first surface of the cantilever. 8. The device of claim 1, wherein the AFM probe comprises a contact type probe. 9. The device of claim 1, wherein the AFM probe comprises a tapping/non-contact/AC-mode type probe. 10. The device of claim 1, further comprising a bias source adapted to bias the thin metal film and a detector adapted to detect a signal provided from the thin metal film. 11. The device of claim 10, wherein the bias source comprises an ac bias source and the detector comprises a phase-sensitive detector. 12. The device of claim 11, wherein the detector comprises a lock-in amplifier. 13. The device of claim 1, wherein the thin metal film comprises a self-sensing film which has a thickness between 10 nanometers and 10 microns and a size of the cantilever is 100 microns or smaller in at least one dimension. 14. The device of claim 1, wherein the thin metal film is selected from the group consisting of Au, Pt, W, Al, Ni, Cu, Cr, Ag, Pd, Pt--Cr, Nickel-Copper, Nickel-Chromium, Pt--W, Isoelastic, Karma, Ni--Ag, and Armour D. 15. The device of claim 14, wherein the thin metal film comprises an Au, Pt, W or Al film having a thickness between 10 and 100 nanometers. 16. The device of claim 1, wherein the piezoresistive sensing element of the AEM probe consists of the thin metal film. 17. The device of claim 1, wherein the AFM probe excludes a doped silicon piezoresistive sensing element. 18. The device of claim 1, wherein the piezoresistive sensing element has a noise level below 3.5 nV/√Hz in a frequency range 62 kHz-67 kHz. 19. The device of claim 1, wherein the piezoresistive sensing element has a noise level of about 3.0 nV/√Hz in a frequency range 62 kHz-67 kHz. 20. The device of claim 1, wherein the piezoresistive sensing element has a force resolution of at least 3.8 fN/√Hz at 500 kHz. 21. The device of claim 1, wherein the cantilever has a size of no more than 100 microns in at least two of the three dimensions. 22. The device of claim 1, wherein the cantilever has a size of no more than 100 microns in each of the three dimensions.
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