[특허]Apparatus and method for shielding a wafer from charged particles during plasma etching

[미국특허] Apparatus and method for shielding a wafer from charged particles during plasma etching 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C23F-001/00
출원번호	US-0260375 (2005-10-28)
등록번호	US-7438822 (2008-10-21)
발명자 / 주소	Yan,Hongwen Ji,Brian L. Panda,Siddhartha Wise,Richard Chen,Bomy A.
출원인 / 주소	International Business Machines Corporation
대리인 / 주소	Whitham, Curtis, Christofferson & Cook, PC
인용정보	피인용 횟수 : 0 인용 특허 : 13

초록 ▼

A plasma etching system having a wafer chuck with a magnet that applies a magnetic field over a wafer to shield the wafer from charged particles. The magnetic field is parallel with the wafer, and is strongest near the wafer surface. The magnetic field may be straight, or circular. In operation, electrons are deflected from the wafer by the Lorentz force, the wafer acquires a positive charge, and ions are deflected by electrostatic repulsion. Neutral species are allowed through the magnetic field, and they collide with the wafer. Neutral species generally provide more isotropic and material-selective etching than charged particles, so the present magnetic field tends to increase etch isotropy and material selectivity. Also, the magnetic field can protect the wafer from seasoning processes designed to clean unwanted films from the chamber surface as seasoning processes typically rely on etching by charged particles.

대표청구항 ▼

What is claimed is: 1. A method for chamber seasoning with a wafer in-situ, comprising the steps of: a) producing a chamber seasoning plasma above the wafer after etching said wafer; b) creating a magnetic field between the wafer and seasoning plasma, wherein the magnetic field is parallel to the wafer, and wherein the magnetic field decreases in strength with distance above the wafer, and wherein the magnetic field reflects electrons having an energy of 100 eV or less traveling toward the wafer in a Z-direction. 2. The method of claim 1 wherein about 90% or 95% of electrons from the chamber seasoning plasma traveling toward the wafer are reflected away from the wafer by the magnetic field. 3. A method for shielding a wafer from charged particles in a plasma, comprising the steps of: a) producing a plasma in a chamber above the wafer; b) creating a linear magnetic field between the wafer and the plasma, wherein the magnetic field is parallel to the wafer, and wherein the linear magnetic field decreases in strength with distance above the wafer such that the linear magnetic field reflects more than 50% of the electrons traveling from the plasma to the wafer away from the wafer. 4. The method of claim 3 wherein a chemistry of the plasma is selected such that the plasma provides chamber seasoning. 5. The method of claim 3 wherein the linear magnetic field reflects electrons having an energy of 10 eV or less traveling toward the wafer in a Z-direction. 6. The method of claim 3 wherein the linear magnetic field reflects electrons having an energy of 4 eV or less traveling toward the wafer in a Z-direction. 7. The method of claim 3 wherein chemistry of the plasma is selected such that shielding the wafer from charged particles causes an increase in isotropy of an etch process. 8. The method of claim 7 wherein the linear magnetic field reflects electrons having an energy of 2 eV or less traveling toward the wafer in a Z-direction.

이 특허에 인용된 특허 (13) 인용/피인용 타임라인 분석

Van Autryve Luc,FRX ; Lang Stefan Oswald,DEX, Localizing cleaning plasma for semiconductor processing.
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Class Walter H. (Yonkers NY) Hurwitt Steven D. (Park Ridge NJ) Hill Michael L. (New York NY) Hutt Marvin K. (Oakland NJ), Magnetically enhanced plasma process and apparatus.
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Hanley Peter R. (Danville CA) Savas Stephen E. (San Jose CA) Levy Karl B. (Saratoga CA) Jha Neeta (Santa Clara CA) Donohoe Kevin (Mountain View CA), Magnetically enhanced plasma reactor system for semiconductor processing.
상세보기
Shan Hongching ; Lindley Roger ; Bjorkman Claes ; Qian Xue Yu ; Plavidal Richard ; Pu Bryan ; Ding Ji ; Li Zongyu ; Ke Kuang-Han ; Welch Michael, Magnetically-enhanced plasma chamber with non-uniform magnetic field.
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Maydan Dan (Los Altos Hills CA) Somekh Sasson (Redwood City CA) Cheng Mei (San Jose CA) Cheng David (San Jose CA), Magnetron-enhanced plasma etching process.
상세보기
Fujimura Shuzo (Tokyo JPX), Method and apparatus for microwave plasma anisotropic dry etching.
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Wang Wei ; Miller Keith ; Gogh James Van ; Gopalraja Praburam, Method and apparatus to improve the side wall and bottom coverage in IMP process by using magnetic field.
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Collins Kenneth S. ; Roderick Craig A. ; Trow John R. ; Yang Chan-Lon ; Wong Jerry Yuen-Kui ; Marks Jeffrey ; Keswick Peter R. ; Groechel David W. ; Pinson ; II Jay D. ; Ishikawa Tetsuya ; Lei Lawren, Plasma etch processes.
상세보기
Collins Kenneth S. ; Yang Chan-Lon ; Wong Jerry Yuen-Kui ; Marks Jeffrey ; Keswick Peter R. ; Groechel David W., Plasma reactor and processes using RF inductive coupling and scavenger temperature control.
상세보기
Collins Kenneth S., Plasma reactor using UHF/VHF and RF triode source, and process.
상세보기
Collins Kenneth S. ; Roderick Craig A. ; Trow John R. ; Yang Chan-Lon ; Wong Jerry Yuen-Kui ; Marks Jeffrey ; Keswick Peter R. ; Groechel David W. ; Pinson ; II Jay D. ; Ishikawa Tetsuya,JPX ; Lei La, Process used in an RF coupled plasma reactor.
상세보기
Nikulin Serge L., Semiconductor wafer processor, plasma generating apparatus, magnetic field generator, and method of generating a magnetic field.
상세보기
Collins Kenneth S. (San Jose CA) Roderick Craig A. (San Jose CA) Trow John R. (Santa Clara CA) Yang Chan-Lon (Los Gatos CA) Wong Jerry Y. (Fremont CA) Marks Jeffrey (San Jose CA) Keswick Peter R. (Ne, Silicon scavenger in an inductively coupled RF plasma reactor.
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A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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[미국특허] Apparatus and method for shielding a wafer from charged particles during plasma etching 원문보기