[특허]Production of high purity ultrafine metal carbide particles

[미국특허] Production of high purity ultrafine metal carbide particles 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C01B-003/30 C01B-003/00 C01B-031/34 C01B-031/00 C01B-031/36
출원번호	US-0613551 (2006-12-20)
등록번호	US-7438880 (2008-10-21)
발명자 / 주소	Hung,Cheng Hung Vanier,Noel R.
출원인 / 주소	PPG Industries Ohio, Inc.
대리인 / 주소	Palladino,Donald R.
인용정보	피인용 횟수 : 5 인용 특허 : 26

초록 ▼

The production of ultrafine metal carbide powders from solid metal carbide and nitrogen-containing material is disclosed. The starting materials are fed together or separately to a plasma system where the solid metal carbide is melted and/or vaporized in the presence of nitrogen to form ultrafine me

대표청구항 ▼

We claim: 1. A method for making ultrafine metal carbide particles comprising: introducing a solid metal carbide and a nitrogen-containing material into a plasma; heating the solid metal carbide and nitrogen-containing material by the plasma to form ultrafine particles of the metal carbide; and collecting the ultrafine metal carbide particles. 2. The method of claim 1, wherein the nitrogen-containing material is provided in the form of a nitrogen compound. 3. The method of claim 2, wherein the nitrogen-containing material comprises urea, ureaform, urazole, ammonium acetate, N-N-dimethylformamide, methylformamide, methylhydrazine, formamide, ethylenediamine, methylamine and/or ammonia. 4. The method of claim 1, wherein the nitrogen-containing material is solid. 5. The method of claim 4, wherein the solid nitrogen-containing material comprise urea. 6. The method of claim 4, wherein the solid nitrogen-containing material has an average particle size of from 10 micron to 1,000 microns. 7. The method of claim 1, wherein the solid metal carbide comprises boron carbide. 8. The method of claim 1, further comprising mixing the solid metal carbide and nitrogen-containing material before the introduction into the plasma. 9. The method of claim 1, further comprising contacting the solid metal carbide and nitrogen-containing material with a carrier gas before the introduction into the plasma. 10. The method of claim 1, further comprising introducing an additional reactant into the plasma. 11. The method of claim 10, wherein the additional reactant comprises a metal of the metal carbide. 12. The method of claim 11, wherein the metal is boron. 13. The method of claim 10, wherein the additional reactant comprises silicon. 14. The method of claim 13, wherein the silicon is introduced into the plasma in the form of SiC. 15. The method of claim 1, wherein the ultrafine metal carbide particles have an average particle size of less than 100 nm. 16. The method of claim 1, wherein the ultrafine metal carbide particles comprise B4C, B13C2, B8C, B10C and/or B25C. 17. The method of claim 1, wherein the ultrafine boron carbide particles comprise B4C. 18. The method of claim 17, wherein the ultrafine B4C particles include less than 5 weight percent oxide impurities. 19. An apparatus for making ultrafine metal carbide particles comprising: a source of solid metal carbide; a source of nitrogen-containing material; a plasma chamber; and at least one feed line for delivering the solid metal carbide and nitrogen-containing material to the plasma chamber. 20. The apparatus of claim 19, wherein the nitrogen-containing material is solid. 21. The apparatus of claim 19, further comprising at least one carrier gas feed line for delivering a carrier gas to the plasma chamber. 22. The apparatus of claim 19, further comprising means for collecting the ultrafine metal carbide particles.

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[미국특허] Production of high purity ultrafine metal carbide particles 원문보기