[특허]System and method for uniform multi-plane silicon oxide layer formation for optical applications

[미국특허] System and method for uniform multi-plane silicon oxide layer formation for optical applications 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-021/337 H01L-021/02
출원번호	US-0306952 (2006-01-17)
등록번호	US-7442589 (2008-10-28)
발명자 / 주소	Yu,Lianzhong Yang,Ken L. Keyser,Thomas
출원인 / 주소	Honeywell International Inc.
대리인 / 주소	McDonnell Boehnen Hulbert & Berghoff LLP
인용정보	피인용 횟수 : 2 인용 특허 : 50

초록 ▼

Methods and systems for growing uniform oxide layers include an example method including growing a first layer of oxide on first and second facets of the substrate, with the first facet having a faster oxide growth rate. The oxide is removed from the first facet and a second oxide layer is grown on the first and second facets. Removing the oxide from the first facet includes shielding the second facet and exposing the substrate to a deoxidizing condition. The second facet is then exposed to receive the second oxide layer. Areas having differing oxide thicknesses are also grown by repeatedly growing oxide layers, selectively shielding areas, and removing oxide from exposed areas.

대표청구항 ▼

What is claimed is: 1. A method for growing layers on a substrate comprising: providing a crystalline substrate having first and second facets, the first facet having a faster layer-growth rate than the second facet; growing a first layer on the first and second facets; removing the first layer from the first facet; and growing a second layer on the first and second facets. 2. The method of claim 1, wherein the first facet is parallel to a 111 plane of the crystalline substrate and wherein the second facet is parallel to a 100 plane of the crystalline substrate. 3. The method of claim 1, wherein the first and second layers comprise an oxide of the crystalline substrate. 4. The method of claim 3, wherein the crystalline substrate is silicon. 5. The method of claim 1, wherein growing the first layer comprises maintaining layer growth conditions for a first period and wherein growing the second layer comprises maintaining layer growth conditions for a second period. 6. The method of claim 5, wherein a first ratio of the second period relative to the sum of the first and second periods is substantially equal to a second ratio of a first growth rate of the second facet relative to a second growth rate of the first facet. 7. The method of claim 5, wherein the first period is of a duration sufficient to grow oxide having a thickness about equal to S*(1-X/Y), where S is a final thickness of oxide grown on the second facet for a total period about equal to a sum of the first and second periods, X is a first growth rate for the second facet, and Y is a second growth rate of the first facet. 8. The method of claim 5, wherein the first period is equal to t1 and the second period is equal to t2 where t1 is equal to (Xi(100)^2)/B+Xi(100)/(B/A) and t2 is equal to (X0(100)^2-Xi(100)^2)/B+(X0(100) -Xi(100)/(B/A) and (X0(111)^2)/B+X0(111)/(B/A) where Xi(100) is a thickness of the first layer on the second facet, X0(100) is a thickness of the first and second layers on the second facet, X0(111) is a thickness of the second layer on the first facet, Xi(100)+X0(100) and X0(111) are equal, B is equal to a parabolic rate constant corresponding to the layer growth condition, and B/A is a linear rate constant corresponding to the layer growth condition. 9. The method of claim 1, wherein removing the first layer from the first facet comprises: shielding the second facet; exposing the crystalline substrate to a layer removing condition adapted to remove the unshielded first layer; and re-exposing the second facet. 10. The method of claim 9, wherein shielding the second facet comprises: applying a photoresist compound to the first and second facets; masking one of the first facet and the second facet to create a masked and an unmasked facet; exposing the unmasked facet to light; and removing the photoresist compound from the first facet. 11. The method of claim 9, wherein shielding the second facet comprises depositing a metal layer on the second facet. 12. The method of claim 11, wherein depositing a metal layer on the second facet comprises: masking the first facet; and diffusing metal over the crystalline substrate. 13. The method of claim 12, wherein diffusing metal over the crystalline substrate comprises at least one of E-beam, chemical vapor deposition, and sputtering.

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[미국특허] System and method for uniform multi-plane silicon oxide layer formation for optical applications 원문보기