Leakage current prevention circuit
원문보기
IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0560855
(2006-11-17)
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등록번호 |
US-7443228
(2008-10-28)
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우선권정보 |
CN-2006 1 0062821(2006-09-27) |
발명자
/ 주소 |
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출원인 / 주소 |
- Hong Fu Jin Precision Industry (Shen Zhen) Co., Ltd.
- Hon Hai Precision Industry Co., Ltd.
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
1 인용 특허 :
7 |
초록
▼
A leakage current prevention circuit for preventing a power source from being affected by leakage current includes a first transistor, and a second transistor. A gate of the first transistor receives a control signal and a source of the first transistor is grounded. A gate of the second transistor i
A leakage current prevention circuit for preventing a power source from being affected by leakage current includes a first transistor, and a second transistor. A gate of the first transistor receives a control signal and a source of the first transistor is grounded. A gate of the second transistor is connected to a drain of the first transistor, a drain of the second transistor is electrically connected to the power source, and a source of the second transistor is connected to a pull-up circuit which is connected to a chipset. When the chipset receives a drive signal, the control signal controls status of the first and second transistors so that the power source provides voltage to the pull-up circuit for the drive signal.
대표청구항
▼
What is claimed is: 1. A leakage current prevention circuit for preventing a power source from being affected by a leakage current which is generated at the instant of disconnecting an external device from the power source, the leakage current prevention circuit comprising: a first transistor havin
What is claimed is: 1. A leakage current prevention circuit for preventing a power source from being affected by a leakage current which is generated at the instant of disconnecting an external device from the power source, the leakage current prevention circuit comprising: a first transistor having a gate configured for receiving a control signal, a source grounded, and a drain; and a second transistor having a gate connected to the drain of the first transistor, a drain electrically connected to the power source, and a source connected to a pull-up circuit and to the gate thereof via a resistor, wherein a drive signal generated by connecting the external device to the pull-up circuit is sent to a chipset, when the chipset receives the drive signal, the control signal controls status of the first and second transistors so that voltage from the power source is provided to the pull-up circuit for a pull-up voltage for the drive signal. 2. The leakage current prevention circuit as claimed in claim 1, wherein the first transistor is an N-channel metal-oxide-semiconductor field-effect transistor, the second transistor is a P-channel metal-oxide-semiconductor field-effect transistor. 3. The leakage current prevention circuit as claimed in claim 1, wherein the circuit further comprises a filter inductor connected between the second transistor and the pull-up circuit. 4. A circuit comprising: a pull-up circuit configured to electrically connect a chipset with an external device which is configured for providing a drive signal to the chipset via the pull-up circuit; a power source configured for providing voltage to the drive signal in the pull-up circuit to enhance driving ability of the drive signal; and a control circuit connected between the pull-up circuit and the power source, the control circuit receiving a control signal corresponding to the drive signal, and being capable of controlling the power source selectively connecting with the pull-up circuit, wherein the control circuit comprises a first transistor with the gate thereof receiving the control signal, and the source thereof grounded, and a second transistor with the gate thereof connected to the drain of the first transistor, the drain connected to the power source, and the source connected to the pull-up circuit and to the gate thereof via a resistor. 5. The circuit as claimed in claim 4, wherein the first transistor is an N-channel-conductivity metal-oxide-semiconductor field-effect transistor, and the second transistor is a P-channel-conductivity metal-oxide-semiconductor field-effect transistor. 6. The circuit as claimed in claim 5, wherein the circuit further comprises a filter inductor connected between the source of the second transistor and the pull-up circuit. 7. A circuit comprising: a pull-up circuit configured to electrically connect an electronic component with an external device which is configured for providing a drive signal to the electronic component via the pull-up circuit; a power source configured for providing voltage to the drive signal in the pull-up circuit to enhance driving ability of the drive signal; and a control circuit electrically connected between the pull-up circuit and the power source, the control circuit receiving a control signal in response to appearance and disappearance of the drive signal at the pull-up circuit and being capable of controlling the power source electrically connecting with the pull-up circuit or not according to the control signal, thereby preventing the power source being affected by a leakage current from the pull-up circuit, wherein the control circuit comprises a first transistor and a second transistor, the gate of the first transistor receives the control signal, the source of the first transistor is grounded, the gate of the second transistor is connected to the drain of the first transistor, the drain of the second transistor is electrically connected to the power source, the source of the second transistor is coupled to the pull-up circuit and to the gate thereof via a resistor. 8. The circuit as claimed in claim 7, wherein the circuit further comprises a filter inductor connected between the source of the second transistor and the pull-up circuit.
이 특허에 인용된 특허 (7)
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Karl Rapp, Comparator circuit.
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Bedwell, Ryan D.; Chun, Christopher K. Y.; Qureshi, Qadeer A.; Vaglica, John J., Integrated circuit power management for reducing leakage current in circuit arrays and method therefor.
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Singhal, Vipul, Reducing leakage current in circuits implemented using CMOS transistors.
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Ooishi Tsukasa,JPX, Semiconductor device for reducing effects of noise on an internal circuit.
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Hiroshi Hatae JP, Semiconductor integrated circuit.
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Noda Hiromasa,JPX ; Aoki Masakazu,JPX ; Idei Youji,JPX ; Kajigaya Kazuhiko,JPX ; Nagashima Osamu,JPX ; Itoh Kiyoo,JPX ; Horiguchi Masashi,JPX ; Sakata Takeshi,JPX, Semiconductor integrated circuit device and method of activating the same.
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Tsunezawa Masakazu,JPX, Semiconductor integrated circuit device which shortens the transition time between operating and standby states.
이 특허를 인용한 특허 (1)
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Joshi, Rajiv V.; Ziegler, Matthew M., Resonant virtual supply booster for synchronous digital circuits having a predictable evaluate time.
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