IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0220166
(2005-09-06)
|
등록번호 |
US-7455719
(2008-11-25)
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발명자
/ 주소 |
|
출원인 / 주소 |
- Advanced Technology Materials, Inc.
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
24 인용 특허 :
99 |
초록
▼
A fluid storage and dispensing apparatus, including a fluid storage and dispensing vessel having an interior volume, in which the interior volume contains a physical adsorbent sorptively retaining a fluid thereon and from which the fluid is desorbable for dispensing from the vessel, and a dispensing
A fluid storage and dispensing apparatus, including a fluid storage and dispensing vessel having an interior volume, in which the interior volume contains a physical adsorbent sorptively retaining a fluid thereon and from which the fluid is desorbable for dispensing from the vessel, and a dispensing assembly coupled to the vessel for dispensing desorbed fluid from the vessel. The physical adsorbent includes a monolithic carbon physical adsorbent that is characterized by at least one of the following characteristics: (a) a fill density measured for arsine gas at 25�� C. and pressure of 650 torr that is greater than 400 grams arsine per liter of adsorbent; (b) at least 30% of overall porosity of the adsorbent including slit-shaped pores having a size in a range of from about 0.3 to about 0.72 nanometer, and at least 20% of the overall porosity including micropores of diameter <2 nanometers; and (c) having been formed by pyrolysis and optional activation, at temperature(s) below 1000�� C., and having a bulk density of from about 0.80 to about 2.0 grams per cubic centimeter.
대표청구항
▼
What is claimed is: 1. A fluid storage and dispensing vessel comprising an interior volume having disposed therein an adsorbent that is characterized by at least one of the following characteristics: (a) a fill density measured for arsine gas at 25�� C. and pressure of 650 torr that is greater than
What is claimed is: 1. A fluid storage and dispensing vessel comprising an interior volume having disposed therein an adsorbent that is characterized by at least one of the following characteristics: (a) a fill density measured for arsine gas at 25�� C. and pressure of 650 torr that is greater than 400 grams arsine per liter of adsorbent; (b) at least 30% of overall porosity of said adsorbent comprising slit-shaped pores having a size in a range of from about 0.3 to about 0.72 nanometer, and at least 20% of the overall porosity comprising micropores of diameter 2, SiF4, Cl2, ClF3, GeF4, SiF4, boron halides, organometallic compounds, and compounds containing metal selected from the group consisting of aluminum, barium, strontium, gallium, indium, tungsten, antimony, silver, gold, palladium, and gadolinium. 54. The semiconductor manufacturing apparatus of claim 45, wherein the adsorbent has adsorbed thereon a boron-containing fluid. 55. A fluid storage and dispensing vessel comprising an interior volume having disposed therein an adsorbent that is characterized by at least one of the following characteristics: (a) a fill density measured for arsine gas at 25�� C. and pressure of 650 torr that is greater than 400 grams arsine per liter of adsorbent; (b) at least 30% of overall porosity of said adsorbent comprising slit-shaped pores having a size in a range of from about 0.3 to about 0.72 nanometer, and at least 20% of the overall porosity comprising micropores of diameter <2 nanometers; and (c) having a bulk density of from about 0.80 to about 2.0 grams per cubic centimeter, wherein said adsorbent is contained in said interior volume for sorptively retaining a fluid thereon and from which the fluid is desorbable for dispensing from the vessel, and further comprising said fluid contained therein, wherein the fluid comprises boron trifluoride. 56. A semiconductor manufacturing apparatus comprising a fluid storage and dispensing vessel comprising an interior volume having disposed therein an adsorbent that is characterized by at least one of the following characteristics: (a) a fill density measured for arsine gas at 25�� C. and pressure of 650 torr that is greater than 400 grams arsine per liter of adsorbent; (b) at least 30% of overall porosity of said adsorbent comprising slit-shaped pores having a size in a range of from about 0.3 to about 0.72 nanometer, and at least 20% of the overall porosity comprising micropores of diameter <2 nanometers; and (c) having a bulk density of from about 0.80 to about 2.0 grams per cubic centimeter, coupled to a semiconductor manufacturing tool, wherein said semiconductor manufacturing tool comprises an ion implanter and said gas comprises an implant species. 57. The fluid storage and dispensing vessel of claim 1, wherein said adsorbent is characterized by characteristics (a) and (b). 58. The fluid storage and dispensing vessel of claim 1, wherein said adsorbent is characterized by characteristics (a) and (c). 59. The fluid storage and dispensing vessel of claim 1, wherein said adsorbent is characterized by characteristics (b) and (c). 60. The semiconductor manufacturing apparatus of claim 56, wherein said adsorbent is characterized by characteristic (a). 61. The semiconductor manufacturing apparatus of claim 56, wherein said adsorbent is characterized by characteristic (b). 62. The semiconductor manufacturing apparatus of claim 56, wherein said adsorbent is characterized by characteristic (c). 63. The semiconductor manufacturing apparatus of claim 56, wherein said adsorbent is characterized by characteristics (a) and (b). 64. The semiconductor manufacturing apparatus of claim 56, wherein said adsorbent is characterized by characteristics (a) and (c). 65. The semiconductor manufacturing apparatus of claim 56, wherein said adsorbent is characterized by characteristics (b) and (c). 66. The semiconductor manufacturing apparatus of claim 56, wherein said adsorbent is characterized by characteristics (a), (b) and (c).
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