초록 ▼

When a semiconductor film is irradiated with laser light, the semiconductor film is instantaneously melted and expand locally. In order to reduce internal stress generated by this expansion, strain is locally generated in the semiconductor film. Accordingly, a variation is caused among portions with

When a semiconductor film is irradiated with laser light, the semiconductor film is instantaneously melted and expand locally. In order to reduce internal stress generated by this expansion, strain is locally generated in the semiconductor film. Accordingly, a variation is caused among portions with strain and portions without strain, and a variation is caused also by a difference in extent of strain. According to the present invention, after laser light irradiation, an oxide film (referred to as a chemical oxide) is formed by using a solution containing ozone (typically, ozone water) to form an oxide film of 1 to 10 nm in total, and further, a heat treatment for reducing strain of a semiconductor film (a heat treatment of heating the semiconductor film instantaneously to approximately 400 to 1000�� C.) is performed.

대표청구항 ▼

What is claimed is: 1. A method for manufacturing a semiconductor device, comprising: forming a first semiconductor film on an insulating surface; irradiating the first semiconductor film with laser light; forming an oxide film at a surface of the first semiconductor film; forming a second semicond

What is claimed is: 1. A method for manufacturing a semiconductor device, comprising: forming a first semiconductor film on an insulating surface; irradiating the first semiconductor film with laser light; forming an oxide film at a surface of the first semiconductor film; forming a second semiconductor film by patterning the first semiconductor film; oxidizing a surface of the second semiconductor film by using a solution comprising ozone; heating the second semiconductor film for forming a third semiconductor film; forming a fourth semiconductor film comprising a rare gas element over the third semiconductor film; and adding an impurity to the third semiconductor film to form source and drain regions. 2. The method according to claim 1, wherein the step forming the first semiconductor film comprises: forming a semiconductor film comprising an amorphous structure on the insulating surface; adding a metal element to the semiconductor film comprising the amorphous structure; crystallizing the semiconductor film comprising the amorphous structure to form a semiconductor film comprising a crystalline structure; and removing an oxide film at the suiface of the semiconductor film comprising the crystalline structure. 3. The method according to claim 2, wherein the metal element comprises at least one selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au. 4. The method according to claim 1, wherein an oxide film formed by irradiating the first semiconductor film with the laser light is removed between the step of irradiating the first semiconductor film with the laser light and the step of forming the oxide film at the surface of the first semiconductor film. 5. A method for manufacturing a semiconductor device, comprising: forming a first semiconductor film on an insulating surface; irradiating the first semiconductor film with laser light; forming an oxide film at a surface of the first semiconductor film; forming a semiconductor film by patterning the first semiconductor film; heating the first semiconductor film to form a second semiconductor film; oxidizing a surface of the second semiconductor film by using a solution comprising ozone; forming a fourth semiconductor film comprising a rare gas element over the second semiconductor film; and adding an impurity to the second semiconductor film to form source and drain regions. 6. The method according to claim 5, wherein the step forming the first semiconductor film comprises: forming a semiconductor film comprising an amorphous structure on the insulating surface; adding a metal element to the semiconductor film comprising the amorphous structure; crystallizing the semiconductor film comprising the amorphous structure to form a semiconductor film comprising a crystalline structure; and removing an oxide film at the surface of the semiconductor film comprising the crystalline structure. 7. The method according to claim 6, wherein the metal element comprises at least one selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au. 8. The method according to claim 5, wherein an oxide film formed by irradiating the first semiconductor film with the laser light is removed between the step of irradiating the first semiconductor film with the laser light and the step of forming the oxide film at the surface of the first semiconductor film. 9. A method for manufacturing a semiconductor device, comprising: forming a first semiconductor film on an insulating surface; irradiating the first semiconductor film with laser light; forming an oxide film at a surface of the first semiconductor film; forming a second semiconductor film by patterning the first semiconductor film; heating the second semiconductor film to form a third semiconductor film; oxidizing a surface of the third semiconductor film by using a solution comprising ozone; heating the third semiconductor film to form a fourth semiconductor film; forming a fifth semiconductor film comprising a rare gas element over the fourth semiconductor film; and adding an impurity to the fourth semiconductor film to form source and drain regions. 10. The method according to claim 9, wherein the step forming the first semiconductor film comprises: forming a semiconductor film comprising an amorphous structure on the insulating surface; adding a metal element to the semiconductor film comprising the amorphous structure; crystallizing the semiconductor film comprising the amorphous structure to form a semiconductor film comprising a crystalline structure; and removing an oxide film at the surface of the semiconductor film comprising the crystalline structure. 11. The method according to claim 10, wherein the metal element comprises at least one selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au. 12. The method according to claim 9, wherein an oxide film formed by irradiating the first semiconductor film with the laser light is removed between the step of irradiating the first semiconductor film with the laser light and the step of forming the oxide film at the surface of the first semiconductor film. 13. A method for manufacturing a semiconductor device, comprising: forming a first semiconductor film comprising an amorphous structure on an insulating surface; adding a metal element to the first semiconductor film comprising the amorphous structure; crystallizing the first semiconductor film to form a second semiconductor film comprising a crystalline structure; irradiating the second semiconductor film with laser light; forming a third semiconductor film by patterning the second semiconductor film; performing a first heat treatment of the third semiconductor film; oxidizing a surface of the third semiconductor film by using a solution comprising ozone to form an oxide film after the step of performing the first heat treatment of the third semiconductor film; forming a fourth semiconductor film comprising a rare gas element over the oxide film; performing a second heat treatment to reduce the metal element in the third semiconductor film by gettering of the metal element into the fourth semiconductor film; removing the fourth semiconductor film; and removing the oxide film. 14. The method according to claim 13, wherein an oxide film formed at a surface of the second semiconductor film is removed before the step of the laser light irradiation. 15. The method according to claim 13, wherein an oxide film formed by the laser light irradiation is removed after the step of the laser light irradiation. 16. The method according to claim 13, wherein the oxide film is one of a silicon oxide film and a silicon oxynitride film of 1 to 10 nm in film thickness. 17. The method according to claim 13, wherein the metal element comprises at least one selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au. 18. The method according to claim 13, wherein the rare gas element is at least one selected from the group consisting of He, Ne, Ar, Kr, and Xe. 19. A method for manufacturing a semiconductor device, comprising: forming a first semiconductor film comprising an amorphous structure on an insulating surface; adding a metal element to the first semiconductor film comprising the amorphous structure; crystallizing the first semiconductor film to form a second semiconductor film comprising a crystalline structure; irradiating the second semiconductor film with laser light; forming a third semiconductor film by patterning the second semiconductor film; oxidizing a surface of the third semiconductor film by using a solution comprising ozone to form an oxide film; performing a first heat treatment of the second third semiconductor film after the step of oxidizing the surface of the third semiconductor film; forming a fourth semiconductor film including a rare gas element over the oxide film; performing a second heat treatment to reduce the metal element in the third semiconductor film by gettering of the metal element into the fourth semiconductor film; removing the fourth semiconductor film; and removing the oxide film. 20. The method according to claim 19, wherein an oxide film formed at a surface of the second semiconductor film is removed before the step of the laser light irradiation. 21. The method according to claim 19, wherein an oxide film formed by the laser light irradiation is removed after the step of the laser light irradiation. 22. The method according to claim 19, wherein the oxide film is one of a silicon oxide film and a silicon oxynitride film of 1 to 10 nm in film thickness. 23. The method according to claim 19, wherein the metal element comprises at least one selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, U, Pt, Cu, and Au. 24. The method according to claim 19, wherein the rare gas element is at least one selected from the group consisting of He, Ne, Ar, Kr, and Xe. 25. A method for manufacturing a semiconductor device, comprising: forming a first semiconductor film comprising an amorphous structure on an insulating surface; adding a metal element to the first semiconductor film comprising the amorphous structure; crystallizing the first semiconductor film to form a second semiconductor film including a crystalline structure; irradiating the second semiconductor film with laser light; performing a first heat treatment of the second semiconductor film after the step of irradiating the second semiconductor film with the laser light; oxidizing a surface of the second semiconductor film by using a solution including ozone to form an oxide film after the step of performing the first heat treatment of the second semiconductor film; performing a second heat treatment of the second semiconductor film after the step of oxidizing the surface of the second semiconductor film; forming a third semiconductor film comprising a rare gas element over the oxide film; performing a third heat treatment to reduce the metal element in the second semiconductor film by gettering of the metal element into the third semiconductor film; removing the third semiconductor film; and removing the oxide film. 26. The method according to claim 25, wherein an oxide film formed at a surface of the second semiconductor film is removed before the step of the laser light irradiation. 27. The method according to claim 25, wherein an oxide film formed by the laser light irradiation is removed after the step of the laser light irradiation. 28. The method according to claim 25, wherein the oxide film is one of a silicon oxide film and a silicon oxynitride film of 1 to 10 nm in film thickness. 29. The method according to claim 25, wherein the metal element comprises at least one selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, U, Pt, Cu, and Au. 30. The method according to claim 25, wherein the rare gas element is at least one selected from the group consisting of He, Ne, Ar, Kr, and Xe.