초록 ▼

A process for fabricating a semiconductor device including the steps of: introducing into an amorphous silicon film, a metallic element which accelerates the crystallization of the amorphous silicon film; applying heat treatment to the amorphous silicon film to obtain a crystalline silicon film; irr

A process for fabricating a semiconductor device including the steps of: introducing into an amorphous silicon film, a metallic element which accelerates the crystallization of the amorphous silicon film; applying heat treatment to the amorphous silicon film to obtain a crystalline silicon film; irradiating a laser beam or an intense light to the crystalline silicon film; and heat treating the crystalline silicon film irradiated with a laser beam or an intense light.

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What is claimed is: 1. A method for manufacturing a semiconductor device comprising: forming an insulating layer on a semiconductor film comprising silicon over a substrate; applying a solution containing a catalyst element on a surface of the insulating layer; rotating the substrate to spin dry th

What is claimed is: 1. A method for manufacturing a semiconductor device comprising: forming an insulating layer on a semiconductor film comprising silicon over a substrate; applying a solution containing a catalyst element on a surface of the insulating layer; rotating the substrate to spin dry the surface of the insulating layer, after applying the solution; performing a first heat treatment to crystallize the semiconductor film, after rotating the substrate; irradiating the semiconductor film with a laser beam, after the first heat treatment; and performing a second heat treatment on the semiconductor film, after the irradiation with the laser beam. 2. The method for manufacturing a semiconductor device according to claim 1, wherein the solution comprises a polar solvent. 3. The method for manufacturing a semiconductor device according to claim 1, wherein the solution contains a surfactant. 4. The method for manufacturing a semiconductor device according to claim 1, wherein the catalyst element is at least one selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Ag, and Au. 5. The method for manufacturing a semiconductor device according to claim 1, further comprising a step of forming an impurity region in the semiconductor film, after the second heat treatment. 6. The method for manufacturing a semiconductor device according to claim 1, wherein the second heat treatment is performed at a temperature 400�� C. or higher. 7. A method for manufacturing a semiconductor device comprising: forming an insulating layer on a semiconductor film comprising silicon over a substrate; applying a solution containing a catalyst element on a surface of the insulating layer; rotating the substrate to spin dry the surface of the insulating layer, after applying the solution; performing a first heat treatment to crystallize the semiconductor film, after rotating the substrate; irradiating the surface of the semiconductor film with a light, after the first heat treatment; and performing a second heat treatment on the semiconductor film, after the irradiation with the light. 8. The method for manufacturing a semiconductor device according to claim 7, wherein the solution comprises a polar solvent. 9. The method for manufacturing a semiconductor device according to claim 7, wherein the solution contains a surfactant. 10. The method for manufacturing a semiconductor device according to claim 7, wherein the catalyst element is at least one selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, Ag, and Au. 11. The method for manufacturing a semiconductor device according to claim 7, further comprising a step of forming an impurity region in the semiconductor film, after the second heat treatment. 12. The method for manufacturing a semiconductor device according to claim 7, wherein the second heat treatment is performed at a temperature 400�� C. or higher.