Organic polymers, electronic devices, and methods
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/31
H01L-021/02
H01L-021/469
출원번호
US-0428084
(2006-06-30)
등록번호
US-7473652
(2009-01-06)
발명자
/ 주소
Bai,Feng
Jones,Todd D.
Lewandowski,Kevin M.
Lee,Tzu Chen
Muyres,Dawn V.
Kelley,Tommie W.
출원인 / 주소
3M Innovative Properties Company
대리인 / 주소
Kokko,Kent S.
인용정보
피인용 횟수 :
1인용 특허 :
30
초록▼
Organic polymers for use in electronic devices, wherein the polymer includes repeat units of the formula: wherein: each R1 is independently H, an aryl group, Cl, Br, I, or an organic group that includes a crosslinkable group; each R2 is independently H, an aryl group or R4; each R3 is independent
Organic polymers for use in electronic devices, wherein the polymer includes repeat units of the formula: wherein: each R1 is independently H, an aryl group, Cl, Br, I, or an organic group that includes a crosslinkable group; each R2 is independently H, an aryl group or R4; each R3 is independently H or methyl; each R5 is independently an alkyl group, a halogen, or R4; each R4 is independently an organic group that includes at least one CN group and has a molecular weight of about 30 to about 200 per CN group; and n=0-3; with the proviso that at least one repeat unit in the polymer includes an R4. These polymers are useful in electronic devices such as organic thin film transistors.
대표청구항▼
What is claimed is: 1. A method of making an electronic device, the method comprising forming an organic polymer dielectric layer comprising a substantially nonfluorinated organic polymer having repeat units of the formulas: wherein: each R1 is independently H, Cl, Br, I, an aryl group, or an org
What is claimed is: 1. A method of making an electronic device, the method comprising forming an organic polymer dielectric layer comprising a substantially nonfluorinated organic polymer having repeat units of the formulas: wherein: each R1 is independently H, Cl, Br, I, an aryl group, or an organic group that includes a crosslinkable group; each R2 is independently H, an aryl group, or R4; each R3 is independently H or methyl; each R5 is independently an alkyl group, a halogen, or R4; each R4 is independently an organic group comprising at least one CN group and having a molecular weight of about 30 to about 200 per CN group; and n=0-3; with the proviso that at least one repeat unit in the polymer includes an R4. 2. The method of claim 1 wherein forming an organic polymer dielectric layer comprises forming a film of the nonfluorinated organic polymer and annealing the nonfluorinated organic polymer. 3. The method of claim 1 wherein forming an organic polymer dielectric layer comprises forming a film of the nonfluorinated organic polymer and crosslinking the nonfluorinated organic polymer. 4. The method of claim 1 wherein each R1 is independently H, a (C5-C8)aryl group, Cl, Br, I, or an organic group that includes (meth)acrylate, amine, hydroxyl, thiol, oxirane, aziridine, chlorosilane, vinyl, or alkoxysilane groups. 5. The method of claim 1 wherein each R2 is independently H, a (C5-C8)aryl group, or R4 and each R4 is a (C2-C20) organic group comprising at least one CN group and having a molecular weight of about 30 to about 200 per CN group. 6. The method of claim 1 wherein R4 is N-methyl-(2-cyanoethyl)carbamido, N-bis(2-cyanoethyl)carbamido, p-(2-cyanoethyl)phenyl, p-(2,2-dicyanopropyl)phenyl, p-(1,2-dicyanopropionitrilo)phenyl, N-methyl-N-(2-cyanoethyl)benzylamino, bis-N-(2-cyanoethyl)benzylamino, cyanomethyl, 2,2'-dicyanopropyl, 1,2,2'-tricyanoethyl, or N,N'-bis(2-cyanoethyl)aminoethyl. 7. The method of claim 1 wherein at least one R1 includes a crosslinkable group. 8. The method of claim 7 wherein the crosslinkable group comprises (meth)acrylate, amine, hydroxyl, thiol, oxirane, aziridine, chlorosilane, vinyl, or alkoxysilane groups. 9. The method of claim 1 the device further comprises a polymeric surface-modifying film on at least a portion of the dielectric layer. 10. The method of claim 9 further comprising a semiconductor layer, wherein the polymeric surface-modifying film is interposed between the dielectric layer and the semiconductor layer. 11. The method of claim 9 wherein the polymeric surface-modifying film comprises a polymer having styrenic interpolymerized units. 12. The method of claim 9 wherein the polymeric surface-modifying film comprises a homopolymer of styrene. 13. The method of claim 1 wherein said organic polymer dielectric layer comprises a polymer comprising repeat units of the formulas: wherein: R is CH3 or CH2CH2CN; each R5 is independently an alkyl group, a halogen, or an organic group comprising at least one CN group and having a molecular weight of about 30 to about 200 per CN group; and n=0-3. 14. The method of claim 1 wherein said organic polymer dielectric layer comprises a copolymer of bis(2-cyanoethyl)acrylamide with a polystyrene macromer. 15. The method of claim 1 wherein said organic polymer dielectric layer comprises a polymer comprising repeat units of the formula: 16. The method of claim 1 wherein said organic polymer dielectric layer comprises repeat units of the formula: 17. The method of claim 1 wherein said organic polymer dielectric layer comprises a polymer comprising repeat units of the formula: 18. The method of claim 1 wherein said organic polymer dielectric layer comprises a copolymer comprising repeat units of the formula: 19. An electronic device prepared by the method of claim 1. 20. The device of claim 19 which is a capacitor, a thin film transistor, or an electroluminescent lamp. 21. The method of claim 1 wherein said step of forming is selected from knife coating, spin coating, drop coating, ink jetting, rotogravure coating, spray coating, and roll coating. 22. The method of claim 1 wherein said organic polymer dielectric layer further comprises fillers with high dielectric constants.
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