초록 ▼

A silicon nitride-bonded SiC refractory is provided, which includes SiC as a main phase and Si3N4 and/or Si2N2O as a secondary phase and which has a bending strength of 150 to 300 MPa and a bulk density of 2.6 to 2.9. A method for producing a silicon nitride-bonded SiC refractory is also provided, w

A silicon nitride-bonded SiC refractory is provided, which includes SiC as a main phase and Si3N4 and/or Si2N2O as a secondary phase and which has a bending strength of 150 to 300 MPa and a bulk density of 2.6 to 2.9. A method for producing a silicon nitride-bonded SiC refractory is also provided, which comprises a step of mixing 30 to 70% by mass of a SiC powder of 30 to 300 μm as an aggregate, 10 to 50% by mass of a SiC powder of 0.05 to 30 μm, 10 to 30% by mass of a Si powder of 0.05 to 30 μm, and 0.1 to 3% by mass, in terms of oxide, of at least one member selected from the group consisting of Al, Ca, Fe, Ti, Zr and Mg.

대표청구항 ▼

The invention claimed is: 1. A silicon nitride-bonded SiC refractory comprising: SiC as a main phase and Si3N4 and/or Si2N2O as a secondary phase, and having a bending strength of 150 to 300 MPa, a bulk density of 2.6 to 2.9, and a thermal conductivity of 20 to 80 W/(m��K); wherein said silicon nit

The invention claimed is: 1. A silicon nitride-bonded SiC refractory comprising: SiC as a main phase and Si3N4 and/or Si2N2O as a secondary phase, and having a bending strength of 150 to 300 MPa, a bulk density of 2.6 to 2.9, and a thermal conductivity of 20 to 80 W/(m��K); wherein said silicon nitride-bonded SiC refractory is formed from a mixture that includes SiC powder having a particle diameter of 30 to 300 μm as aggregate particles in an amount of 30 to 70 mass % constituting the main phase, SiC powder having a particle diameter of 0.05 to 30 μm in amount of 10 to 50 mass %, Si powder having a particle size of 0.05 to 30 μm in an amount of 10 to 30 mass %, and at least one material selected from the group consisting of Al, Ca, Fe, Ti, Zr and Mg in an amount of 0.05 to 3 mass % in terms of an oxide; and wherein an amount of creep exhibited by said silicon nitride-bonded SiC refractory at a temperature of 1400�� C. and a holding time of 200 hours is less than 0.1 mm. 2. The silicon nitride-bonded SiC refractory according to claim 1, wherein fine particles of SiC powder having a particle size of 0.1 to 1 μm are uniformly dispersed around the SiC aggregate particles constituting the main phase. 3. The silicon nitride-bonded SiC refractory according to claim 1, which has a Young's modulus of 100 to 500 GPa. 4. The silicon nitride-bonded SiC refractory according to claim 1, wherein the at least one member selected from the group consisting of AL, Ca, Fe, Ti, Zr and Mg is present in an amount of 0.1 to 3% by mass in terms of oxide. 5. The silicon nitride-bonded SiC refractory according to claim 1, wherein a particle diameter of the SiC aggregate constituting the main phase is 50 to 300 μm. 6. The silicon nitride-bonded SiC refractory according to claim 1, wherein the SiC is present in an amount of 60 to 90 mass % and at least one of Si3N4 and Si2N2O is present in an amount of 10 to 40 mass %. 7. A silicon nitride-bonded SiC refractory comprising: SiC aggregates defining a main phase; and at least one of Si3N4 and Si2N2O defining a secondary phase present at a bonding portion of said SiC aggregates of said main phase; wherein said silicon nitride-bonded SiC refractory has a bending strength of 150 to 300 MPa, a bulk density of 2.6 to 2.9, and a thermal conductivity of 20 to 80 W/(m��K); wherein an amount of creep exhibited by said silicon nitride-bonded SiC refractory at a temperature of 1400�� C. and a holding time of 200 hours is less than 0.1 mm; and wherein said silicon nitride-bonded SiC refractory is formed from a mixture including SiC powder having a particle diameter of 30 to 300 μm as aggregate particles in an amount of 30 to 70 mass % constituting the main phase, SiC powder having a particle diameter of 0.05 to 30 μm in amount of 10 to 50 mass %, Si powder having a particle size of 0.05 to 30 μm in an amount of 10 to 30 mass %, and at least one material selected from the group consisting of Al, Ca, Fe, Ti, Zr and Mg in an amount of 0.05 to 3 mass % in terms of an oxide.