초록 ▼

The present invention includes a catalyst having a layered structure with, (1) a porous support, (2) a buffer layer, (3) an interfacial layer, and optionally (4) a catalyst layer. The invention also provides a process in which a reactant is converted to a product by passing through a reaction chambe

The present invention includes a catalyst having a layered structure with, (1) a porous support, (2) a buffer layer, (3) an interfacial layer, and optionally (4) a catalyst layer. The invention also provides a process in which a reactant is converted to a product by passing through a reaction chamber containing the catalyst.

대표청구항 ▼

We claim: 1. Microchannel apparatus comprising a connection between at least two microchannels, wherein the connection has a metal internal surface that has been coated with a vapor-deposited buffer layer comprising a metal oxide, wherein the buffer layer has a thickness of between 0.05 μm and

We claim: 1. Microchannel apparatus comprising a connection between at least two microchannels, wherein the connection has a metal internal surface that has been coated with a vapor-deposited buffer layer comprising a metal oxide, wherein the buffer layer has a thickness of between 0.05 μm and 10 μm. 2. The microchannel apparatus of claim 1 further comprising an interfacial layer disposed on the buffer layer. 3. The microchannel apparatus of claim 1, wherein said microchannels each comprise at least one metallic wall and wherein said at least one metallic wall of each of the at least two microchannels has been coated with a buffer layer comprising a metal oxide. 4. The microchannel apparatus of claim 1 wherein the buffer layer comprises a TiO2 sublayer in contact with the metallic wall and a dense alpha alumina sublayer disposed over the TiO2 sublayer. 5. The microchannel apparatus of claim 1 wherein the connection comprises a metal tube or a metal pipe. 6. The microchannel apparatus of claim 5 wherein the buffer layer is less than 5 μm thick. 7. The microchannel apparatus of claim 1 wherein the buffer layer comprises Al2O3, TiO2, ZrO2, or combinations thereof. 8. The microchannel apparatus of claim 1 wherein the connection is a header that is connected to the at least two microchannels. 9. The microchannel apparatus of claim 8 wherein the header and the at least two microchannels are disposed within the same plane. 10. A method of making microchannel apparatus comprising: providing a microchannel apparatus comprising a first layer and a second layer wherein each of said first and second layers comprises at least one microchannel, and, subsequently, vapor depositing a buffer layer on at least one interior wall of a microchannel in each of said first and second layers in said microchannel apparatus. 11. A microchannel apparatus made by the method of claim 10 wherein the buffer layer comprises a metal oxide layer. 12. The microchannel apparatus of claim 11 wherein the buffer layer is nonporous. 13. The method of claim 10 wherein the step of vapor depositing comprises chemical vapor depositing conducted in a temperature range of 250 to 800�� C., and wherein the buffer layer comprises a metal oxide. 14. The microchannel apparatus of claim 11 wherein the metal oxide layer has a thickness of between 0.05 μm and 10 μm. 15. The microchannel apparatus of claim 14 further comprising an interfacial layer, and wherein the buffer layer is disposed between the interior wall of a microchannel and the interfacial and has a coefficient of thermal expansion that is intermediate the thermal expansion coefficients of the wall and the interfacial layer. 16. The microchannel apparatus of claim 14 wherein the buffer layer comprises Al2O3, TiO2, ZrO2, or combinations thereof; and wherein the buffer layer is less than 5 microns thick. 17. The microchannel apparatus of claim 14 wherein the interfacial layer has a thickness that ranges from 1 to 50 μm and has a BET surface area of at least 1 m2/g. 18. The microchannel apparatus of claim 14 further comprising an interfacial layer disposed over the buffer layer; wherein the buffer layer and interfacial layer comprise a coating; and wherein the apparatus possesses thermal cycling stability such that, if exposed to 3 thermal cycles in air, the catalyst exhibits less than 2% flaking of the coating. 19. The method of claim 10 further comprising a step of depositing an interfacial layer on said buffer layer in each of said microchannels in each of said first and second layers. 20. The method of claim 19 further comprising a step of depositing a catalytically active material in each of said microchannels in each of said first and second layers, either after or simultaneous with said step of depositing an interfacial layer. 21. Microchannel apparatus made by the method of claim 20 further comprising a first heat exchanger adjacent to and in thermal contact with the first layer and a second heat exchanger adjacent to and in thermal contact with the second layer. 22. The microchannel apparatus of claim 21 wherein the at least one microchannel in the first layer has at least one dimension of 1 mm or less; and wherein the at least one microchannel in the second layer has at least one dimension of 1 mm or less. 23. The microchannel apparatus of claim 22 wherein the first heat exchanger has a thickness of 250 microns to 3 mm; and wherein the second heat exchanger has a thickness of 250 microns to 3 mm. 24. The method of claim 10 wherein the step of providing a microchannel apparatus, comprises: forming a subassembly by stacking at least one inner thin metal sheet in alternating contact with at least one outer metal thin sheet; wherein the at least one inner thin metal sheet comprises a solid margin around a circumference; wherein the solid margin defines at least one longitudinal wall of a microchannel in the first layer; and bonding the subassembly. 25. The method of claim 24 wherein the microchannel in the first layer has at least one dimension of 1 mm or less. 26. The microchannel apparatus of claim 21 wherein a connection connects the at least one microchannel in the first layer with the at least one microchannel in the second layer. 27. The microchannel apparatus of claim 21 wherein the buffer layer contains at least two compositionally different sublayers. 28. The method of claim 10 wherein the first layer comprises plural microchannels that are connected via a header. 29. The method of claim 10 wherein the microchannel apparatus is a laminated microchannel apparatus formed from an assembly of laminae; wherein the first layer is formed from a first laminae and the second layer is formed from a second laminae; and wherein the step of vapor depositing comprises chemical vapor depositing. 30. The method of claim 10 wherein a connection connects the at least one microchannel in the first layer with the at least one microchannel in the second layer. 31. The method of claim 10 wherein the step of vapor depositing a buffer layer comprises the steps of: vapor depositing a TiO2 layer; and vapor depositing a dense alumina layer over the TiO2 layer; and further comprising a step of depositing an interfacial layer that comprises depositing a less dense, high surface area alumina layer over the dense alumina layer. 32. The method of claim 10 wherein a connection connects the at least one microchannel in the first layer with the at least one microchannel in the second layer; wherein the connection comprises interior surfaces, and comprising vapor depositing the buffer layer on interior surfaces of the connection. 33. The method of claim 32 wherein the connection comprises a metal tube or a metal pipe. 34. The method of claim 32 wherein the step of vapor depositing comprises chemical vapor depositing. 35. A method of making microchannel apparatus, comprising: providing a microchannel apparatus comprising a first layer and a second layer; wherein the first layer comprises a first microchannel that is defined by at least one first microchannel metallic wall; wherein the second layer comprises a second microchannel that is defined by at least one second microchannel metallic wall; and a connection through a layer wherein the connection connects the first microchannel with the second microchannel; and, subsequently, applying a buffer layer onto at least a portion of the at least one first microchannel wall, and at least a portion of the at least one second microchannel wall. 36. The method of claim 35 wherein the step of providing a microchannel apparatus comprises forming a laminated microchannel apparatus from an assembly of laminae; wherein the first layer is formed from a first laminae and the second layer is formed from a second laminae. 37. The method of claim 36 wherein the buffer layer is deposited by chemical vapor deposition and the buffer layer comprises a metal oxide. 38. The method of claim 35 wherein the step of providing a microchannel apparatus, comprises: forming a subassembly by stacking at least one inner thin metal sheet in alternating contact with at least one outer metal thin sheet; wherein the at least one inner thin metal sheet comprises a solid margin around a circumference; wherein the solid margin defines at least one longitudinal wall of a microchannel in the first layer; and bonding the subassembly. 39. The method of claim 38 wherein the microchannel in the first layer has at least one dimension of 1 mm or less. 40. The method of claim 35 further comprising a step of depositing an interfacial layer on said buffer layer. 41. The method of claim 40 further comprising a step of depositing a catalytically active material in each of said microchannels in each of said first and second layers, either after or simultaneous with said step of depositing an interfacial layer. 42. The method of claim 41 wherein the microchannel apparatus that is provided comprises a first heat exchanger adjacent to and in thermal contact with the first layer and a second heat exchanger adjacent to and in thermal contact with the second layer. 43. The method of claim 42 wherein the at least one microchannel in the first layer has at least one dimension of 1 mm or less; and wherein the at least one microchannel in the second layer has at least one dimension of 1 mm or less. 44. The method of claim 43 wherein the first heat exchanger has a thickness of 250 microns to 3 mm; and wherein the second heat exchanger has a thickness of 250 microns to 3 mm. 45. The method of claim 35 wherein the at least one first microchannel metallic wall and at least one second microchannel metallic wall are chemically etched and then the buffer layer is deposited by chemical vapor deposition.