Formation of boride barrier layers using chemisorption techniques
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IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/44
H01L-021/02
출원번호
US-0739549
(2007-04-24)
등록번호
US-7501344
(2009-03-10)
발명자
/ 주소
Byun,Jeong Soo
Mak,Alfred
출원인 / 주소
Applied Materials, Inc.
대리인 / 주소
Patterson & Sheridan, LLP
인용정보
피인용 횟수 :
23인용 특허 :
288
초록▼
In one embodiment, a method for depositing a boride-containing barrier layer on a substrate is provided which includes exposing the substrate sequentially to a boron-containing compound and a tungsten precursor to form a first boride-containing layer during a first sequential chemisorption process,
In one embodiment, a method for depositing a boride-containing barrier layer on a substrate is provided which includes exposing the substrate sequentially to a boron-containing compound and a tungsten precursor to form a first boride-containing layer during a first sequential chemisorption process, and exposing the substrate to the boron-containing compound, the tungsten precursor, and ammonia to form a second boride-containing layer over the first boride-containing layer during a second sequential chemisorption process. In one example, the tungsten precursor contains tungsten hexafluoride and the boron-containing compound contains diborane. In another embodiment, a contact layer is deposited over the second boride-containing layer. The contact layer may contain tungsten and be deposited by a chemical vapor deposition process. Alternatively, the contact layer may contain copper and be deposited by a physical vapor deposition process. In other examples, boride-containing layers may be formed at a temperature of less than about 500�� C.
대표청구항▼
The invention claimed is: 1. A method for depositing a boride-containing barrier layer on a substrate, comprising: exposing a substrate sequentially and cyclically to a boron-containing compound, a purge gas, and a tungsten precursor to form a first boride-containing layer comprising tungsten and b
The invention claimed is: 1. A method for depositing a boride-containing barrier layer on a substrate, comprising: exposing a substrate sequentially and cyclically to a boron-containing compound, a purge gas, and a tungsten precursor to form a first boride-containing layer comprising tungsten and boron during a first sequential chemisorption process; and exposing the substrate sequentially and cyclically to the boron-containing compound, an ammonia purge gas, and the tungsten precursor to form a second boride-containing layer over the first boride-containing layer during a second sequential chemisorption process. 2. The method of claim 1, wherein the second sequential chemisorption process comprises: exposing the substrate to the boron-containing compound; exposing the substrate to the ammonia purge gas; exposing the substrate to the tungsten precursor; and exposing the substrate to the ammonia purge gas. 3. The method of claim 1, wherein the second sequential chemisorption process comprises: exposing the substrate to the boron-containing compound; exposing the substrate to the ammonia purge gas; and exposing the substrate to the tungsten precursor. 4. The method of claim 1, wherein the tungsten precursor comprises tungsten hexafluoride. 5. The method of claim 4, wherein the boron-containing compound comprises diborane. 6. The method of claim 5, wherein a contact layer is deposited over the second boride-containing layer. 7. The method of claim 6, wherein the contact layer comprises tungsten and the contact layer is deposited by a chemical vapor deposition process. 8. The method of claim 6, wherein the contact layer comprises copper and the contact layer is deposited by a physical vapor deposition process. 9. The method of claim 1, wherein the first boride-containing layer or the second boride-containing layer is formed at a temperature of less than about 500�� C. 10. The method of claim 9, wherein the temperature is about 400�� C. or less. 11. A method for depositing a boride-containing barrier layer on a substrate, comprising: exposing a substrate sequentially and cyclically to a boron-containing compound, an ammonia purge gas, and a tungsten precursor to form a first boride-containing layer during a first sequential chemisorption process; and exposing the substrate sequentially and cyclically to the boron-containing compound, a purge gas, and the tungsten precursor to form a second boride-containing layer over the first boride-containing layer during a second sequential chemisorption process. 12. The method of claim 11, wherein the first sequential chemisorption process comprises: exposing the substrate to the boron-containing compound; exposing the substrate to the ammonia purge gas; exposing the substrate to the tungsten precursor; and exposing the substrate to the ammonia purge gas. 13. The method of claim 11, wherein the first sequential chemisorption process comprises: exposing the substrate to the boron-containing compound; exposing the substrate to the ammonia purge gas; and exposing the substrate to the tungsten precursor. 14. The method of claim 11, wherein the tungsten precursor comprises tungsten hexafluoride. 15. The method of claim 14, wherein the boron-containing compound comprises diborane. 16. The method of claim 15, wherein a contact layer is deposited over the second boride-containing layer. 17. The method of claim 16, wherein the contact layer comprises tungsten and the contact layer is deposited by a chemical vapor deposition process. 18. The method of claim 16, wherein the contact layer comprises copper and the contact layer is deposited by a physical vapor deposition process. 19. The method of claim 11, wherein the first boride-containing layer or the second boride-containing layer is formed at a temperature of less than about 500�� C. 20. The method of claim 19, wherein the temperature is about 400�� C. or less. 21. A method for depositing a boride-containing barrier layer on a substrate, comprising: exposing a substrate sequentially to diborane, a purge gas comprising helium, argon, and hydrogen, and tungsten hexafluoride to form a first boride-containing layer comprising tungsten and boron during a first sequential chemisorption process; and exposing the substrate to the diborane, ammonia purge gas, and the tungsten hexafluoride to form a second boride-containing layer over the first boride-containing layer during a second sequential chemisorption process.
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Gurtej Sandhu ; Garo J. Derderian, ALD method to improve surface coverage.
Stall Richard A. (Warren NJ) Tompa Gary S. (Somerville NJ) Gurary Alexander (Bridgewater NJ) Nelson Craig R. (Berkeley Heights NJ), Apparatus for depositing a coating on a substrate.
Yoon, Ki Hwan; Cha, Yonghwa Chris; Yu, Sang Ho; Ahmad, Hafiz Farooq; Wee, Ho Sun, Barrier formation using novel sputter deposition method with PVD, CVD, or ALD.
Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua; Sinha, Ashok; Xi, Ming, Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques.
McKee Rodney Allen ; Walker Frederick Joseph, CaTiO.sub.3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films.
Rajagopalan Ravi ; Ghanayem Steve ; Yamazaki Manabu,JPX ; Ohtsuka Keiichi,JPX ; Maeda Yuji,JPX, Chemical vapor deposition process for depositing tungsten.
Chan Lap ; Zheng Jia Zhen,SGX, Damascene process for forming coplanar top surface of copper connector isolated by barrier layers in an insulating layer.
Kai-Erik Elers FI; Suvi P. Haukka FI; Ville Antero Saanila FI; Sari Johanna Kaipio FI; Pekka Juha Soininen FI, Deposition of transition metal carbides.
DiMeo ; Jr. Frank ; Bilodeau Steven M. ; Van Buskirk Peter C., Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer.
Lee Woo-Hyeong ; Manchanda Lalita, Electronic components with doped metal oxide dielectric materials and a process for making electronic components with do.
Stumborg Michael F. ; Santiago Francisco ; Chu Tak Kin ; Boulais Kevin A., Electronic devices with composite atomic barrier film and process for making same.
Imai Masayuki (Kofu JPX) Nishimura Toshiharu (Kofu JPX), Film forming method wherein a partial pressure of a reaction byproduct in a processing container is reduced temporarily.
Schumaker Norman E. (Warren NJ) Stall Richard A. (Warren NJ) Nelson Craig R. (Green Village NJ) Wagner Wilfried R. (Basking Ridge NJ), Gas treatment apparatus and method.
Mak Alfred ; Lai Kevin ; Leung Cissy ; Ghanayem Steve G. ; Wendling Thomas,DEX ; Jian Ping, Gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride.
Cheng Hwa (Woodbury MN) DePuydt James M. (St. Paul MN) Haase Michael A. (Woodbury MN) Qiu Jun (Woodbury MN), Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy.
Van Hove James M. (Eagan MN) Kuznia Jon N. (Bloomington MN) Olson Donald T. (Roseville MN) Kahn Muhammad A. (White Bear Lake MN) Blasingame Margaret C. (Moundsview MN), High responsivity ultraviolet gallium nitride detector.
Zhao Jun ; Luo Lee ; Jin Xiao Liang ; Wang Jia-Xiang ; Wolff Stefan ; Sajoto Talex, High temperature, high deposition rate process and apparatus for depositing titanium layers.
Gaines James M. (Mohegan Lake NY) Petruzzello John (Carmel NY), II-VI compound semiconductor epitaxial layers having low defects, method for producing and devices utilizing same.
Bension Rouvain M. (310 Summit Ave. Brookline MA 02146) Truesdale Larry K. (27 Wetherill La. Chester Springs PA 19425), Initiation and bonding of diamond and other thin films.
Park In-seon,KRX ; Kim Yeong-kwan,KRX ; Lee Sang-in,KRX ; Kim Byung-hee,KRX ; Lee Sang-min,KRX ; Park Chang-soo,KRX, Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature.
Nguyen, Anh N.; Yang, Michael X.; Xi, Ming; Chung, Hua; Chang, Anzhong; Yuan, Xiaoxiong; Lu, Siqing, Lid assembly for a processing system to facilitate sequential deposition techniques.
Senzaki Yoshihide ; Roberts David Allen ; Norman John Anthony Thomas, Liquid precursor mixtures for deposition of multicomponent metal containing materials.
Aucoin Thomas R. (Ocean NJ) Wittstruck Richard H. (Howell NJ) Zhao Jing (Ellicott MD) Zawadzki Peter A. (Plainfield NJ) Baarck William R. (Fair Haven NJ) Norris Peter E. (Cambridge MA), Method and apparatus for depositing a refractory thin film by chemical vapor deposition.
Xi,Ming; Sinha,Ashok; Kori,Moris; Mak,Alfred W.; Lu,Xinliang; Lai,Ken Kaung; Littau,Karl A., Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer.
Ku, Vincent W.; Chen, Ling; Wu, Dien-Yeh; Ouye, Alan H.; Wysok, Irena, Method and apparatus for gas temperature control in a semiconductor processing system.
Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua, Method and system for controlling the presence of fluorine in refractory metal layers.
Kori,Moris; Mak,Alfred W.; Byun,Jeong Soo; Lei,Lawrence Chung Lai; Chung,Hua; Sinha,Ashok; Xi,Ming, Method and system for controlling the presence of fluorine in refractory metal layers.
Sinha,Ashok; Xi,Ming; Kori,Moris; Mak,Alfred W.; Byun,Jeong Soo; Lei,Lawrence Chung Lai; Chung,Hua, Method and system for controlling the presence of fluorine in refractory metal layers.
Alessandra Satta BE; Karen Maex BE; Kai-Erik Elers FI; Ville Antero Saanila FI; Pekka Juha Soininen FI; Suvi P. Haukka FI, Method for bottomless deposition of barrier layers in integrated circuit metallization schemes.
Liu Jiang (Raleigh NC) Wolter Scott (Zebulon NC) McClure Michael T. (Raleigh NC) Stoner Brian R. (Chapel Hill NC) Glass Jeffrey T. (Apex NC) Hren John J. (Cary NC), Method for forming a diamond coated field emitter and device produced thereby.
Matsumoto Tomotaka (Kawasaki JPX) Inoue Jun (Kawasaki JPX) Ichimura Teruhiko (Kawasaki JPX) Murata Yuji (Kawasaki JPX) Watanabe Junichi (Kawasaki JPX) Nagahiro Yoshio (Kawasaki JPX) Hodate Mari (Kawa, Method for forming a film and method for manufacturing a thin film transistor.
Kim Yeong-kwan,KRX ; Lee Sang-in,KRX ; Park Chang-soo,KRX ; Kim Young-sun,KRX, Method for forming dielectric film of capacitor having different thicknesses partly.
Nishizawa Junichi (6-16 ; Komegafukuro 1-chome ; Sendai-shi Miyagi JPX) Aoki Kenji (Matsudo JPX), Method for growing single crystal thin films of element semiconductor.
Kao Chien-Teh ; Tsai Kenneth ; Pham Quyen ; Rose Ronald L. ; Augason Calvin R. ; Yudovsky Joseph, Method for improved remote microwave plasma source for use with substrate processing system.
Foster Robert F. ; Hillman Joseph T. ; LeBlanc Rene E., Method for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor.
Yun-sook Chae KR; In-sang Jeon KR; Sang-bom Kang KR; Sang-in Lee KR; Kyu-wan Ryu KR, Method of delivering gas into reaction chamber and shower head used to deliver gas.
Mak Alfred ; Lai Kevin ; Leung Cissy ; Ghanayem Steve G. ; Wendling Thomas,DEX ; Jian Ping, Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride.
Kang Sang-bom,KRX ; Lim Hyun-seok,KRX ; Chae Yung-sook,KRX ; Jeon In-sang,KRX ; Choi Gil-heyun,KRX, Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor.
Hyun-Seok Lim KR; Sang-Bom Kang KR; In-Sang Jeon KR; Gil-Heyun Choi KR, Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same.
Kang Sang-bom,KRX ; Park Chang-soo,KRX ; Chae Yun-sook,KRX ; Lee Sang-in,KRX, Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same.
Sang-bum Kang KR; Yun-sook Chae KR; Sang-in Lee KR; Hyun-seok Lim KR; Mee-young Yoon KR, Method of forming selective metal layer and method of forming capacitor and filling contact hole using the same.
Yeong-Kwan Kim KR; Young-Wook Park KR; Seung-Hwan Lee KR, Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane.
Pessa Markus (Tampere FIX) Asonen Harry (Tampere FIX) Varrio Jukka (Tampere FIX) Salokatve Arto (Tampere FIX), Method of growing GaAs films on Si or GaAs substrates using ale.
Soininen Erkki Lauri,FIX ; Harkonen Gitte,FIX ; Lahonen Marja,FIX ; Tornqvist Runar,FIX ; Viljanen Juha,FIX, Method of growing a ZnS:Mn phosphor layer for use in thin-film electroluminescent components.
Otsuka Nobuyuki (Kawasaki JPX), Method of growing a semiconductor layer and a fabrication method of a semiconductor device using such a semiconductor la.
Pekka J. Soininen FI; Kai-Erik Elers FI; Suvi Haukka FI, Method of growing electrical conductors by reducing metal oxide film with organic compound containing -OH, -CHO, or -COOH.
Turner Norman L. (Mountain View CA) White John MacNeill (Los Gatos CA) Berkstresser David (Los Gatos CA), Method of heating and cooling large area glass substrates.
Nasu Yasuhiro (Sagamihara JPX) Okamoto Kenji (Hiratsuka JPX) Watanabe Jun-ichi (Kawasaki JPX) Endo Tetsuro (Atsugi JPX) Soeda Shinichi (Hiratsuka JPX), Method of manufacturing active matrix display device using insulation layer formed by the ale method.
Olubunmi O. Adetutu ; Yeong-Jyh T. Lii ; Paul A. Grudowski, Method of preventing two neighboring contacts from a short-circuit caused by a void between them and device having the same.
Dautartas Mindaugas F. ; Manchanda Lalita, Method of reducing carbon contamination of a thin dielectric film by using gaseous organic precursors, inert gas, and ozone to react with carbon contaminants.
Chen, Fusen; Chen, Ling; Glenn, Walter Benjamin; Gopalraja, Praburam; Fu, Jianming, Methods and apparatus for forming barrier layers in high aspect ratio vias.
Alessandro Cesare Callegari ; Fuad Elias Doany ; Evgeni Petrovich Gousev ; Theodore Harold Zabel, Methods for forming metal oxide layers with enhanced purity.
Falconer John L. ; George Steven M. ; Ott Andrew W. ; Klaus Jason W. ; Noble Richard D. ; Funke Hans H., Modification of zeolite or molecular sieve membranes using atomic layer controlled chemical vapor deposition.
Maydan Dan (Los Altos Hills CA) Somekh Sasson (Redwood City CA) Wang David N. (Cupertino CA) Cheng David (San Jose CA) Toshima Masato (San Jose CA) Harari Isaac (Mountain View CA) Hoppe Peter D. (Sun, Multi-chamber integrated process system.
Maydan Dan ; Somekh Sasson ; Wang David Nin-Kou ; Cheng David ; Toshima Masato ; Harari Isaac ; Hoppe Peter D., Multiple chamber integrated process system.
Aspnes David E. (Watchung NJ) Bhat Rajaram (Red Bank NJ) Colas Etienne G. (Asbury Park NJ) Florez Leigh T. (Atlantic Highlands NJ) Harbison James P. (Fair Haven NJ) Studna Amabrose A. (Raritan NJ), Optical control of deposition of crystal monolayers.
Foley Henry C. (Newark DE) Varrin ; Jr. Robert D. (Newark DE) Sengupta Sourav K. (Newark DE), Plasma-induced, in-situ generation, transport and use or collection of reactive precursors.
Boitnott Charles A. (Half Moon Bay CA) Caughran James W. (Lodi CA) Egbert Steve (Palo Alto CA), Process chamber sleeve with ring seals for isolating individual process modules in a common cluster.
Chang Mei (Cupertino CA) Leung Cissy (Fremont CA) Wang David N. (Saratoga CA) Cheng David (San Jose CA), Process for CVD deposition of tungsten layer on semiconductor wafer.
Saanila, Ville Antero; Elers, Kai-Erik; Kaipio, Sari Johanna; Soininen, Pekka Juha, Process for growing metalloid thin films utilizing boron-containing reducing agents.
Comizzoli Robert Benedict ; Dautartas Mindaugas Fernand ; Osenbach John William, Process for passivating semiconductor laser structures with severe steps in surface topography.
Elers, Kai-Erik; Saanila, Ville Antero; Kaipio, Sari Johanna; Soininen, Pekka Juha, Production of elemental thin films using a boron-containing reducing agent.
Kai-Erik Elers FI; Ville Antero Saanila FI; Sari Johanna Kaipio FI; Pekka Juha Soininen FI, Production of elemental thin films using a boron-containing reducing agent.
Mee-Young Yoon KR; Sang-In Lee KR; Hyun-Seok Lim KR, Semiconductor device fabrication method using an interface control layer to improve a metal interconnection layer.
Park, Hee-sook; Choi, Gil-heyun; Lee, Seung-hwan; Lee, Yun-jung, Semiconductor device having barrier layer between ruthenium layer and metal layer and method for manufacturing the same.
Kwon Dong-chul,KRX ; Wee Young-jin,KRX ; Shin Hong-jae,KRX ; Kim Sung-jin,KRX, Semiconductor device having improved metal line structure and manufacturing method therefor.
Connell George A. N. (Cupertino CA) Fenner David B. (Menlo Park CA) Boyce James B. (Los Altos CA) Fork David K. (Palo Alto CA), Silicon substrate having an epitaxial superconducting layer thereon and method of making same.
Thomas H. Baum ; Witold Paw, Source reagent composition and method for chemical vapor deposition formation or ZR/HF silicate gate dielectric thin films.
Beaulieu David ; Pippins Michael W., Substrate processing apparatus having a substrate transport with a front end extension and an internal substrate buffer.
Yasuhara, Sakiko; Kadokura, Hidekimi, TANTALUM TERTIARY AMYLIMIDO TRIS (DIMETHYLAMIDE), A PROCESS FOR PRODUCING THE SAME, A SOLUTION OF STARTING MATERIAL FOR MOCVD USING THE SAME, AND A METHOD OF FORMING A TANTALUM NITRIDE FILM USING THE.
Wang David N. (Cupertino) White John M. (Hayward) Law Kam S. (Union City) Leung Cissy (Union City) Umotoy Salvador P. (Pittsburg) Collins Kenneth S. (San Jose) Adamik John A. (San Ramon) Perlov Ilya , Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planar.
Nakata Yukihiko,JPX ; Fujihara Masaki,JPX ; Date Masahiro,JPX ; Matsuo Takuya,JPX ; Ayukawa Michiteru,JPX ; Itoga Takashi,JPX, Thin-film semiconductor device including a semiconductor film with high field-effect mobility.
John M. Grant ; Olubunmi O. Adetutu ; Yolanda S. Musgrove, Transistor metal gate structure that minimizes non-planarity effects and method of formation.
Halliyal, Arvind; Ramsbey, Mark T.; Chang, Kuo-Tung; Tripsas, Nicholas H.; Ogle, Robert B., Use of high-K dielectric material in modified ONO structure for semiconductor devices.
Edwards Richard C. (Ringwood NJ) Kolesa Michael S. (Suffern NY) Ishikawa Hiroichi (Mahwah NJ), Wafer processing cluster tool batch preheating and degassing apparatus.
Thorne James M. (Provo UT) Shurtleff James K. (Sandy UT) Allred David D. (Provo UT) Perkins Raymond T. (Provo UT), X-ray wave diffraction optics constructed by atomic layer epitaxy.
Chen, Feng; Humayun, Raashina; Danek, Michal; Chandrashekar, Anand, Low tempature tungsten film deposition for small critical dimension contacts and interconnects.
Chen, Feng; Humayun, Raashina; Danek, Michal; Chandrashekar, Anand, Low temperature tungsten film deposition for small critical dimension contacts and interconnects.
Chen, Feng; Humayun, Raashina; Danek, Michal; Chandrashekar, Anand, Methods for depositing ultra thin low resistivity tungsten film for small critical dimension contacts and interconnects.
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