IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0906628
(2005-02-28)
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등록번호 |
US-7501880
(2009-03-10)
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발명자
/ 주소 |
- Bonaccio,Anthony R.
- Cranford, Jr.,Hayden C.
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출원인 / 주소 |
- International Business Machines Corporation
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
7 인용 특허 :
10 |
초록
▼
A body-biased enhanced current mirror circuit is disclosed wherein the body voltage of a current mirror device is adjusted to compensate for the effect of changes in the output voltage on the output current, increasing the output impedance. For each instance of the current mirror, this approach has
A body-biased enhanced current mirror circuit is disclosed wherein the body voltage of a current mirror device is adjusted to compensate for the effect of changes in the output voltage on the output current, increasing the output impedance. For each instance of the current mirror, this approach has the advantage of requiring no additional margin in operating voltage and of consuming no more circuit area than prior art current mirror designs. In addition, the body-biased enhanced current mirror circuit provides a stable reference current to output current ratio over a wide operating range. An auxiliary MOSFET current mirror device with the body connected to ground may be added in parallel with the body-biased current mirror device to eliminate a non-monotonicity of the current output.
대표청구항
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What is claimed is: 1. A body-biased current mirror circuit comprising: a first current mirror device (60) driven by a first reference voltage (VCS); a first body feedback amplifier (50) coupled to the first current mirror device (60), the first body feedback amplifier (50) configured to regulate a
What is claimed is: 1. A body-biased current mirror circuit comprising: a first current mirror device (60) driven by a first reference voltage (VCS); a first body feedback amplifier (50) coupled to the first current mirror device (60), the first body feedback amplifier (50) configured to regulate a body voltage of the first current mirror device (60) as a function of an output voltage of the first current mirror device (60); and a first load element (40) having an output coupled to an output of the first body feedback amplifier (50); a body of the first load element (40) further coupled to a body of the first body feedback amplifier (50). 2. The body-biased current mirror circuit according to claim 1, wherein the first load element (40) comprises a first MOSFET having a gate voltage regulated by a second reference voltage (VLREF). 3. A method of implementing a body-biased current mirror circuit, the method comprising: providing a first current mirror device (60) configured to be driven by a first reference voltage (VCS); providing a first body feedback amplifier (50) coupled to the first current mirror device (60), the first body feedback amplifier (50) configured to regulate a body voltage of the first current mirror device (60) as a function of an output voltage of the first current mirror device (60); and providing a first load element (40) having an output coupled to an output of the first body feedback amplifier (50); a body of the first load element (40) further coupled to a body of the first body feedback amplifier (50). 4. The body-biased current mirror circuit according to claim 1, wherein the first body feedback amplifier (50) comprises a second MOSFET. 5. The body-biased current mirror circuit according to claim 1, wherein the first body feedback amplifier (50) comprises a MOSFET selected from the group consisting of a zero-threshold voltage MOSFET and a low-threshold voltage MOSFET. 6. The body-biased current mirror circuit according to claim 2, wherein the first reference voltage (VCS) and the second reference voltage (VLREF) are generated by a reference bias generation circuit (500), the reference bias generation circuit (500) comprising: a current reference generator circuit (300), which generates the first reference voltage (VCS); a replica body-biased current mirror circuit (250); and a feedback control circuit (400) which generates the second reference voltage (VLREF). 7. The reference bias generation circuit (500) according to claim 6, wherein the current reference generator circuit (300) comprises: a current source (70); and a diode-connected MOSFET reference device (80) coupled to the current source (70), the diode-connected MOSFET reference device (80) having an output that provides the first reference voltage (VCS). 8. The reference bias generation circuit (500) according to claim 6, wherein the replica body-biased current mirror circuit (250) comprises: a second current mirror device (560) driven by the first reference voltage (VCS); a second body feedback amplifier (550) coupled to the second current mirror device (560), the second body feedback amplifier (550) configured to regulate a body voltage of the second current mirror device (560) as a function of an output voltage of the second current mirror device (560); and a second load element (540) having an output coupled to an output of the second body feedback amplifier (550); a body of the second load element (540) further coupled to a body of the second body feedback amplifier (550). 9. The reference bias generation circuit (500) according to claim 6, wherein the feedback control circuit (400) comprises: an operational amplifier (111) which generates the second reference voltage (VLREF). 10. The reference bias generation circuit (500) according to claim 6, wherein: the first reference voltage (VCS) generated by the current reference generator circuit (300) drives the second current mirror device (560); the second reference voltage (VLREF) generated by an output of the operational amplifier (111) in the feedback control circuit (400) drives the second load element (540); a body of the diode-connected MOSFET reference device (80) is coupled to a body of the second current mirror device (560); and the operational amplifier (111) having a first input coupled to the body of the diode-connected MOSFET reference device (80) and to the body of the second current mirror device (560), and a second input coupled to a third reference voltage (VBREF). 11. The reference bias generation circuit (500) according to claim 10, wherein the third reference voltage (VBREF) corresponds to a value to prevent forward biasing a body-to-diffusion junction of the second current mirror device (560). 12. The body-biased current mirror circuit according to claim 6, further comprising an array of body-biased current mirror circuit (200) instances coupled to the reference bias generation circuit (500). 13. The body-biased current mirror circuit according to claim 6, further comprising an auxiliary current mirror device (115) having an output coupled to an output of the first current mirror device (60); a gate of the auxiliary current mirror device (115) further coupled to a gate of the first current mirror device (60); a source of the auxiliary current mirror device (115) further coupled to a source of the first current mirror device (60); a body of the auxiliary current mirror device (115) further coupled to ground. 14. The method according to claim 3, wherein providing the first load element (40) comprises providing a first MOSFET having a gate voltage regulated by a second reference voltage (VLREF). 15. The method according to claim 3, wherein providing the first body feedback amplifier (50) comprises providing a second MOSFET. 16. The method according to claim 3, wherein providing the first body feedback amplifier (50) comprises providing a MOSFET selected from the group consisting of a zero-threshold voltage MOSFET and a low-threshold voltage MOSFET. 17. The method according to claim 14, wherein the first reference voltage (VCS) and the second reference voltage (VLREF) are generated by a reference bias generation circuit (500), a method of implementing the reference bias generation circuit (500) comprising: providing a current reference generator circuit (300) configured to generate the first reference voltage (VCS); providing a replica body-biased current mirror circuit (250); and providing a feedback control circuit (400) which generates the second reference voltage (VLREF). 18. The method according to claim 17, wherein a method of providing the current reference generator circuit (300) comprises: providing a current source (70); and providing a diode-connected MOSFET reference device (80) coupled to the current source (70), the diode-connected MOSFET reference device (80) having an output that provides the first reference voltage (VCS). 19. The method according to claim 17, wherein a method of providing the replica body-biased current mirror circuit (250) comprises: providing a second current mirror device (560) configured to be driven by the first reference voltage (VCS); providing a second body feedback amplifier (550) coupled to the second current mirror device (560), the second body feedback amplifier (550) configured to regulate a body voltage of the second current mirror device (560) as a function of an output voltage of the second current mirror device (560); and providing a second load element (540) having an output coupled to an output of the second body feedback amplifier (550); a body of the second load element (540) further coupled to a body of the second body feedback amplifier (550). 20. The method according to claim 17, wherein a method of providing the feedback control circuit (400) comprises: providing an operational amplifier (111) which generates the second reference voltage (VLREF). 21. The method according to claim 17, wherein a method of providing the reference bias generation circuit (500) comprises: providing the first reference voltage (VCS) generated by the current reference generator circuit (300) to drive the second current mirror device (560); providing the second reference voltage (VLREF) generated by an output of the operational amplifier (111) in the feedback control circuit (400) to drive the second load element (540); coupling a body of the diode-connected MOSFET reference device (80) to a body of the second current mirror device (560); and configuring the operational amplifier (111) to have a first input coupled to the body of the diode-connected MOSFET reference device (80) and to the body of the second current mirror device (560), and to have a second input coupled to a third reference voltage (VBREF). 22. The method according to claim 21, wherein the third reference voltage (VBREF) corresponds to a value to prevent forward biasing a body-to-diffusion junction of the second current mirror device (560). 23. The method according to claim 17, further comprising providing an array of body-biased current mirror circuit (200) instances coupled to the reference bias generation circuit (500). 24. The method according to claim 17, further comprising providing an auxiliary current mirror device (115) having an output coupled to an output of the first current mirror device (60); a gate of the auxiliary current mirror device (115) further coupled to a gate of the first current mirror device (60); a source of the auxiliary current mirror device (115) further coupled to a source of the first current mirror device (60); a body of the auxiliary current mirror device (115) further coupled to ground.
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