초록 ▼

In a method of refurbishing a deposition target, a surface of the target is provided in a process zone. An electrical arc is generated in the process zone, and a consumable metal wire is inserted into the process zone to form liquefied metal. A pressurized gas is injected into the process zone to di

In a method of refurbishing a deposition target, a surface of the target is provided in a process zone. An electrical arc is generated in the process zone, and a consumable metal wire is inserted into the process zone to form liquefied metal. A pressurized gas is injected into the process zone to direct the liquefied metal toward the surface of the target to splatter the liquefied metal on the surface, thereby forming a coating having the metal on at least a portion of the surface of the target that exhibits reduced contamination from the environment.

대표청구항 ▼

What is claimed is: 1. A method of refurbishing a deposition target having a pre-sputtered surface with a sputtered depression, the method comprising: (a) providing the pre-sputtered surface of the deposition target comprising the sputtered depression, in a process zone; (b) generating an electrica

What is claimed is: 1. A method of refurbishing a deposition target having a pre-sputtered surface with a sputtered depression, the method comprising: (a) providing the pre-sputtered surface of the deposition target comprising the sputtered depression, in a process zone; (b) generating an electrical arc between first and second electrodes in the process zone, wherein at least one of the first or second electrodes comprises a consumable metal wire that forms liquefied metal; and; (c) directing the liquefied metal into the sputtered depression of the deposition target to at least partially fill the sputtered depression with the liquefied metal by injecting a pressurized gas into the process zone to direct the liquefied metal into the sputtered depression, thereby forming a coating comprising the metal in the sputtered depression. 2. A method according to claim 1 wherein (b) comprises generating an electrical arc between an electrode and the surface of the deposition target. 3. A method according to claim 1 wherein the coating comprises at least one of titanium, aluminum, tungsten, tantalum, and copper. 4. A method according to claim 1 wherein the coating comprises at least one of germanium, selenium and tellurium. 5. A method according to claim 1 wherein the coating comprises a plurality of metals. 6. A method according to claim 5 wherein the coating comprises aluminum and at least one of (i) from about 0.25% to about 20% by weight of copper, and (ii) from about 0.25% to about 20% by weight of silicon. 7. A method according to claim 6 wherein in (b) the consumable metal wire comprises an aluminum alloy. 8. A method according to claim 5 wherein the coating comprises a chalcogenide material comprising germanium, selenium and tellurium. 9. A method according to claim 8 wherein in (b) the consumable metal wire comprises a chalcogenide alloy. 10. A method according to claim 1 wherein (c) is repeated to form a plurality of metal layers that form the coating in the sputtered depression on the surface. 11. A method according to claim 10 further comprising exposing the metal layers to an energy source to interdiffuse the metal layers. 12. A method according to claim 11 wherein the metal layers are heated to a temperature of from about 50�� C. to about 3000�� C. 13. A method according to claim 10 wherein the plurality of metal layers comprises at least one aluminum layer and at least one copper layer, and wherein the aluminum and copper layers are heated to form an interdiffused layer comprising from about 0.25% to about 20% by weight of copper. 14. A method according to claim 10 wherein the plurality of metal layers comprises at least one layer having a chalcogen metal, and wherein the plurality of layers are heated to form an interdiffused layer comprising a chalcogenide material. 15. A method according to claim 14 wherein the chalcogenide material comprises at least one of germanium, selenium and tellurium. 16. A method according to claim 1 further comprising: (d) exposing the surface of the deposition target to an energy source to recrystallize the metal on the surface. 17. A method according to claim 16 wherein (d) comprises heating the surface to a temperature of from about 50�� C. to about 3000�� C. 18. A method according to claim 16 wherein (d) comprises directing an electromagnetic energy beam onto the surface to recrystallize the metal. 19. A method according to claim 16 further comprising: (e) machining the surface of the deposition target to provide a predetermined target thickness. 20. A method according to claim 19 further comprising cleaning the surface of the deposition target to remove machining residues. 21. A method according to claim 20 comprising cleaning the surface with a cleaning solvent. 22. A method of refurbishing a deposition target having a pre-sputtered surface with a sputtered depression, the method comprising: (a) providing the pre-sputtered surface of the deposition target comprising the sputtered depression, in a process zone; (b) generating an electrical arc in the process zone between first and second electrodes by applying a voltage to the electrodes, at least one of the first and second electrodes comprising a consumable metal wire, thereby at least partially liquefying the consumable metal wire to form liquefied metal; and (c) directing liquefied metal into the sputtered depression of the deposition target to at least partially fill the sputtered depression with the liquefied metal by injecting a pressurized gas into the process zone to direct the liquefied metal into the sputtered depression, thereby forming a coating comprising the metal in the sputtered depression. 23. A method according to claim 22 wherein the consumable metal wire comprises at least one of titanium, aluminum, tungsten, tantalum and copper. 24. A method according to claim 22 wherein the consumable metal wire comprises at least one of germanium, selenium and tellurium. 25. A method of refurbishing a deposition target having a pre-sputtered surface with a sputtered depression, the method comprising: (a) providing the pre-sputtered surface of the deposition target comprising the sputtered depression, in a process zone; (b) generating an electrical arc in the process zone between the surface of the target and a consumable metal wire by applying a voltage to the target and the consumable metal wire, thereby at least partially liquefying the consumable metal wire in the process zone to form a liquefied metal; and (c) directing liquefied metal into the sputtered depression of the deposition target to at least partially fill the sputtered depression with the liquefied metal by injecting a pressurized gas into the process zone to direct the liquefied metal into the sputtered depression, thereby forming a coating comprising the metal in the sputtered depression. 26. A method according to claim 25 wherein the consumable metal wire comprises at least one of titanium, aluminum, tungsten, tantalum and copper. 27. A method according to claim 25 wherein the consumable metal wire comprises at least one of germanium, selenium and tellurium. 28. A method of refurbishing a deposition target having a pre-sputtered surface with a sputtered depression, the method comprising: (a) providing the pre-sputtered surface of the deposition target comprising the sputtered depression, in a process zone; (b) generating an electrical arc in the process zone between the surface of the target and an electrode by applying a voltage to the target and the electrode; (c) inserting a consumable metal wire into the process zone to at least partially liquefy the consumable metal wire in the process zone to form liquefied metal; and (d) directing liquefied metal into the sputtered depression of the deposition target to at least partially fill the sputtered depression with the liquefied metal by injecting a pressurized gas into the process zone to direct the liquefied metal into the sputtered depression, thereby forming a coating comprising the metal in the sputtered depression. 29. A method according to claim 28 wherein the consumable metal wire comprises at least one of titanium, aluminum, tungsten, tantalum and copper. 30. A method according to claim 28 wherein the consumable metal wire comprises at least one of germanium, selenium and tellurium. 31. A method of refurbishing a deposition target having a pre-sputtered surface with a sputtered depression, the method comprising: (a) providing the pre-sputtered surface of the deposition target comprising the sputtered depression, in a process zone; (b) generating an electrical arc in the process zone between the surface of the sputtering target and an electrode by applying a voltage to the target and the electrode; (c) passing the electrical arc through a nozzle to form a plasma jet in the process zone; (d) directing liquefied metal into the sputtered depression of the deposition target to at least partially fill the sputtered depression with the liquefied metal by inserting a consumable metal wire into the process zone to at least partially liquefy the consumable metal wire in the process zone to form liquefied metal that is directed into the sputtered depression of the deposition target by the plasma jet to at least partially fill the sputtered depression with the liquefied metal; and (e) injecting a pressurized gas into the process zone to reduce contamination of the liquefied metal from the environment. 32. A method according to claim 31 wherein the consumable metal wire comprises at least one of titanium, aluminum, tungsten, tantalum and copper. 33. A method according to claim 31 wherein the consumable metal wire comprises at least one of germanium, selenium and tellurium. 34. A method according to claim 31 wherein the electrode comprises the consumable metal wire.