Current detection for microelectronic devices using source-switched sensors
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G06F-001/00
H02J-003/32
H02J-003/28
G05F-001/00
출원번호
US-0431739
(2006-05-09)
등록번호
US-7506184
(2009-03-17)
발명자
/ 주소
Burton,Edward
Greiner,Robert
Deval,Anant
Huard,Doug
Perchlik,Dave
출원인 / 주소
Intel Corporation
대리인 / 주소
Blakely, Sokoloff, Taylor & Zafman LLP
인용정보
피인용 횟수 :
3인용 특허 :
10
초록▼
A method and apparatus for current detection for microelectronic devices using source-switched sensors. An embodiment of a current detector for a microelectronic device includes a first voltage sensor and a second voltage sensor. The first voltage sensor is to measure a first voltage of the microele
A method and apparatus for current detection for microelectronic devices using source-switched sensors. An embodiment of a current detector for a microelectronic device includes a first voltage sensor and a second voltage sensor. The first voltage sensor is to measure a first voltage of the microelectronic device during a first time period and a second voltage of the microelectronic device during a second time period. The second voltage sensor is to measure the second voltage during the first time period and the first voltage during the second time period. A voltage value is equal to the sum of the first voltage measured by the first sensor plus the first voltage measured by the second sensor, minus the sum of the second voltage measured by the first sensor plus the second voltage measured by the second sensor. Other embodiments are also described and claimed.
대표청구항▼
What is claimed is: 1. A current detector for a microelectronic device comprising: a first voltage sensor, the first voltage sensor to measure a first voltage of the microelectronic device during a first time period and a second voltage of the microelectronic device during a second time period; and
What is claimed is: 1. A current detector for a microelectronic device comprising: a first voltage sensor, the first voltage sensor to measure a first voltage of the microelectronic device during a first time period and a second voltage of the microelectronic device during a second time period; and a second voltage sensor, the second voltage sensor to measure the second voltage during the first time period and the first voltage during the second time period; where a voltage value is equal to the sum of the first voltage measured by the first sensor plus the first voltage measured by the second sensor, minus the sum of the second voltage measured by the first sensor plus the second voltage measured by the second sensor. 2. The current detector of claim 1, wherein the first sensor and the second sensor are ring oscillator sensors. 3. The current detector of claim 1, wherein the first voltage is a voltage on a first side of a resistance and the second voltage is a voltage on a second side of the resistance. 4. The current detector of claim 3, wherein the resistance carries the current to be measured by the current detector. 5. The current detector of claim 3, wherein the resistance is a parasitic resistance of the microelectronic device. 6. The current detector of claim 1, wherein a current value detected by the current detector is used to control power supplied to the microelectronic device. 7. A microprocessor comprising: a resistance; and a current detector to detect a current through the resistance of the microprocessor, the current detector comprising a plurality of sensors including a first sensor and a second sensor, the first and second sensors being switched between sources for a measurement. 8. The microprocessor of claim 7, further comprising a processor core, the processor core to execute instructions; a power connection to an external power converter, the processor core receiving power from the external power converter; and a power control unit to control the external power unit, the power control unit to provide control signals to the external power unit based at least in part on measurements of the current detector. 9. The microprocessor of claim 7, wherein the first sensor measures a first voltage during a first time period and the second sensor measures a second voltage during the first time period. 10. The microprocessor of claim 9, wherein the first sensor measures the second voltage during a second time period and the second sensor measures the first voltage during the second time period. 11. The microprocessor of claim 7, wherein the first sensor and the second sensor are ring oscillator sensors. 12. The microprocessor of claim 7, wherein a control signal is based at least in part on a current value detected by the current detector. 13. The microprocessor of claim 7, further comprising: a plurality of current detectors to detect a plurality of currents through a plurality of resistances in the microprocessor; each current detector comprising a plurality of sensors including a first sensor and a second sensor, the first and second sensors being switched between sources for a measurement. 14. The microprocessor of claim 13, further comprising a plurality of processor cores, wherein each current detector of the plurality of current detectors detects a current of a processing core of the plurality of processing cores. 15. The microprocessor of claim 14, wherein each of the plurality of processor cores is substantially similar to the other processor cores. 16. The microprocessor of claim 7, wherein at least one voltage supply to the microprocessor is based at least in part on a current value detected by the current detector. 17. A method for determining an electrical current through a resistance of a microelectronic device comprising: measuring a first voltage potential at an upstream location from the resistance during a first time period; measuring a second voltage potential at a downstream location from the resistance during the first time period; measuring a third voltage potential at the downstream location from the resistance during a second time period; and measuring a fourth voltage potential at the upstream location from the resistance during the second time period. 18. The method of claim 17, further comprising calculating a voltage value equal to the sum of the first voltage potential and the fourth voltage potential minus the sum of the second voltage potential and the third voltage potential. 19. The method of claim 18, wherein the first voltage potential and the third voltage potential are measured by a first sensor, and the second voltage potential and the fourth potential are measured by a second sensor. 20. The method of claim 19, wherein the first sensor and the second sensors are ring oscillator sensors. 21. The method of claim 17, wherein the microelectronic device is a microprocessor. 22. The method of claim 17, further comprising modifying at least one voltage supply to the microprocessor based at least in part on a current value detected by the current detector. 23. The method of claim 17, further comprising generating a power control signal for the microelectronic device based at least in part on the current measurement. 24. A computer system comprising: a processor, the processor including a current detector including a plurality of voltage sensors, a measurement process for the current detector including switching the sources of the voltage sensors; and a dynamic random access memory (DRAM) for storage of instructions and data for the processor. 25. The computer system of claim 24, wherein the plurality of voltage sensors includes a first sensor and a second sensor. 26. The computer system of claim 25, wherein the first sensor is to measure a first voltage during a first time period and a second voltage during a second time period, and wherein the second sensor is to measure the second voltage during the first time period and the first voltage curing the second time period. 27. The computer system of claim 26, where the current detector is to use a delta value equal to the sum of the first voltage measurements minus the sum of the second voltage measurements. 28. The computer system of claim 24, wherein the first sensor and the second sensor are each a ring oscillator sensor.
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