Method for forming a dielectric layer and related devices
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-029/76
H01L-029/66
출원번호
US-0475680
(2006-06-26)
등록번호
US-7511321
(2009-03-31)
발명자
/ 주소
Kuse,Ronald John
Yasuda,Tetsuji
출원인 / 주소
Intel Corporation
대리인 / 주소
Blakely, Sokoloff, Taylor & Zafman LLP
인용정보
피인용 횟수 :
0인용 특허 :
13
초록
A dielectric layer may be formed by depositing the dielectric layer to an intermediate thickness and applying a nitridation process to the dielectric layer of intermediate thickness. The dielectric layer may then be deposited to the final, desired thickness.
대표청구항▼
What is claimed is: 1. A device comprising: a substrate made of a semiconductor material; a dielectric layer, having a final thickness, formed on an upper surface of the substrate, wherein the dielectric layer comprises an initial dielectric layer of intermediate thickness, which is less than the f
What is claimed is: 1. A device comprising: a substrate made of a semiconductor material; a dielectric layer, having a final thickness, formed on an upper surface of the substrate, wherein the dielectric layer comprises an initial dielectric layer of intermediate thickness, which is less than the final thickness; and a final dielectric layer, wherein the initial dielectric layer comprises nitrogen distributed non-uniformly throughout the initial dielectric layer, wherein the concentration profile of nitrogen within the dielectric layer having a final thickness comprises a bell-shaped curve with a substantial higher peak concentration of nitrogen within a central core of the initial dielectric layer, wherein the concentration of nitrogen at an interface between the initial dielectric layer and the final dielectric layer is substantially reduced, and the concentration of nitrogen at an interface between the initial dielectric layer and the substrate is also substantially reduced; and an electrical lead in communication with the dielectric layer to provide an electrical field to the substrate through the dielectric field. 2. The device of claim 1, wherein the dielectric layer of final thickness is formed according to the method of forming a dielectric layer on a semiconductor substrate comprising: depositing the initial dielectric layer to an intermediate thickness, wherein the intermediate thickness is less than a final thickness of the dielectric layer; applying a nitridation process to the initial dielectric layer of intermediate thickness to enhance incorporation of nitrogen into the initial dielectric layer; and then depositing a final dielectric layer to form the final thickness of the dielectric layer, wherein the deposition of the final dielectric layer occurs predominantly at the top surface of the nitrided initial dielectric layer. 3. The device of claim 2, wherein incorporating nitrogen into the initial dielectric layer of intermediate thickness comprises exposing the initial dielectric layer of intermediate thickness to thermal nitridation in a gas selected from the group consisting of N2O gas, NO gas, NH3 gas, N2 gas, and any combination thereof. 4. The device of claim 2, wherein incorporating nitrogen into the dielectric layer of intermediate thickness comprises exposing the dielectric layer of intermediate thickness to a plasma nitridation process selected from the group consisting of N20 plasma nitridation, NO plasma nitridation, NH3 plasma nitridation, N2 plasma nitridation, and any combination thereof. 5. The device of claim 2, wherein the final dielectric is deposited by a method selected from the group consisting of chemical vapor deposition (CVD) and physical vapor deposition (PVD). 6. The device of claim 2, further comprising applying an oxidation process to the dielectric layer of intermediate thickness to incorporate oxygen into the dielectric layer. 7. The device of claim 6, wherein applying the oxidation process to the dielectric layer of intermediate thickness comprises exposing the dielectric layer of intermediate thickness to thermal nitridation in O2 gas. 8. The device of claim 6, wherein applying the oxidation process to the dielectric layer of intermediate thickness comprises exposing the dielectric layer of intermediate thickness to O2 plasma nitridation. 9. The device of claim 6, wherein applying the oxidation process to the dielectric layer of intermediate thickness comprises exposing the dielectric layer of intermediate thickness to thermal nitridation in O3 gas. 10. The device of claim 6, wherein applying the oxidation process to the dielectric layer of intermediate thickness comprises exposing the dielectric layer of intermediate thickness to O3 plasma nitridation. 11. The device of claim 2, wherein incorporating nitrogen into the initial dielectric layer comprises applying a remote plasma nitridation to the initial dielectric layer. 12. The device of claim 2, further comprising annealing the dielectric layer, wherein the anneal is performed at approximately 800�� C. and in an environment comprising approximately 1% O2. 13. The device of claim 1, wherein the dielectric layer comprises a dielectric layer substantially made of Al2O3. 14. The device of claim 1, wherein the device comprises a field effect transistor (FET), wherein the field effect transistor comprises a gate dielectric comprising the dielectric layer having a final thickness. 15. The device of claim 14, wherein the gate dielectric comprising the dielectric layer formed by the method of forming the dielectric layer further comprising incorporating oxygen into the initial dielectric layer while also incorporating said nitrogen into the initial dielectric layer. 16. The device of claim 1, wherein the dielectric layer comprises a material selected from the group consisting of HfO2, ZrO2, TiO2, La2O3, Y2O3, Gd2O3, GeO2, SrTiO3, metal silicates, metal aluminates, and any combination thereof. 17. The device of claim 1, wherein the device comprises a metal oxide semiconductor field-effect transistor (MOSFET), wherein the metal oxide semiconductor field effect transistor comprises a gate dielectric comprising the dielectric layer having a final thickness. 18. The device of claim 17, wherein the substrate comprises germanium. 19. The device of claim 1, wherein the dielectric layer comprises a dielectric layer made of SiO2. 20. The device of claim 1, wherein the concentration profile of nitrogen within the dielectric layer having a final thickness comprises a bell-shaped curve when plotted on a logarithmic scale, with a substantially higher peak concentration of nitrogen within the central core of the initial dielectric layer of at least a plurality of times that of the concentration of nitrogen at the interface between the semiconductor material and the initial dielectric layer and/or the interface between the initial dielectric layer and the final dielectric layer, so that the distributed nitrogen concentration is non-uniformly distributed, having a substantial peak in the central core of the dielectric and substantially lowered concentration of nitrogen at said interfaces, and thus providing increased suppression of dopant diffusion, a reduction in leakage current, improved reliability, mitigated positive flatband voltage shifts, and/or reduced degradation of carrier mobility.
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이 특허에 인용된 특허 (13)
Reder, Steven E.; Bhatt, Hemanshu D., Intermittent pulsed oxidation process.
Khare, Mukesh V.; D'Emic, Christopher P.; Hwang, Thomas T.; Jamison, Paul C.; Quinlivan, James J.; Ward, Beth A., Method for improved plasma nitridation of ultra thin gate dielectrics.
Halliyal, Arvind; Ramsbey, Mark T.; Zhang, Wei; Randolph, Mark W.; Cheung, Fred T. K., Use of high-K dielectric material in modified ONO structure for semiconductor devices.
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