[특허]Linear low capacitance overvoltage protection circuit

[미국특허] Linear low capacitance overvoltage protection circuit 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H02H-009/04 H02H-001/04 H02H-001/00 H02H-003/22 H02H-003/20 H04M-001/00
출원번호	UP-0254162 (2005-10-19)
등록번호	US-7515391 (2009-07-01)
발명자 / 주소	Casey, Kelly C.
출원인 / 주소	Littlefuse, Inc.
대리인 / 주소	Chauza, PC, Roger N.
인용정보	피인용 횟수 : 4 인용 특허 : 23

초록 ▼

A bipolar semiconductor overvoltage protection circuit presents less capacitance to a communication line. The overvoltage protection circuit includes an overvoltage protection device that is biased with a voltage to not only reduce the capacitance thereof, but also to reduce the change in capacitance as a function of frequency. Changes in communication line voltages thus change the capacitance of the overvoltage protection device less, resulting in the ability to allow the transmission of high capacity data protocols with reduced error rates.

대표청구항 ▼

What is claimed is: 1. A low capacitance overvoltage protection circuit, comprising: an overvoltage protection device having at least two terminals, said overvoltage protection device responsive to an overvoltage for providing a low impedance path between said two terminals; said overvoltage protection device characterized by a rated surge current; a diode bridge having at least four nodes, and said diode bridge having a first diode connected between a first node and a third node, a second diode connected between the third node and a second node, a third diode connected between the second node and a fourth node, a fourth diode connected between the first node and the fourth, and said overvoltage protection device connected between said first and second nodes of said diode bridge; one or more of said diodes having a respective junction area capable of carrying the rated surge current of said overvoltage protection device and not substantially more, thereby minimizing a capacitance of said diode bridge; and said diode bridge does not include series bridge diodes to reduce capacitance, between at least one of the following four pairs of nodes; a) said first node and said third node, b) said third node and said second node, c) said second node and said fourth node d) said fourth node and said first node. 2. The overvoltage protection circuit of claim 1, wherein said overvoltage protection device comprises a four-layer semiconductor device with only two terminals. 3. The overvoltage protection circuit of claim 2, wherein said four-layer semiconductor device comprises a sidac. 4. The overvoltage protection circuit of claim 1, wherein said diode bridge comprises three diode pairs, a cathode and an anode of one diode pair being adapted for connection to a ground. 5. The overvoltage protection circuit of claim 1, wherein said overvoltage protection device operates in a unidirectional manner, and is connected in said bridge so that currents resulting from respective overvoltages of both positive and negative polarities pass between said first and second nodes in only one direction. 6. The overvoltage protection device of claim 1, wherein said diodes have junction areas rated for carrying no more than 150 percent of the rated surge current of said overvoltage protection device. 7. A method of constructing an overvoltage protection circuit, comprising the steps of: selecting an overvoltage protection device having a desired rated surge current and a desired breakover voltage; selecting diodes for a bridge so that at least some of the diodes of the bridge have a rated surge current not substantially higher than that of the overvoltage protection device; and placing the overvoltage protection device and the diodes into the bridge circuit to thereby provide a low capacitance overvoltage protection circuit, and arranging the bridge diodes and the overvoltage protection device so that currents resulting from overvoltages of both polarities pass through at least one bridge diode and said overvoltage protection device. 8. The method of claim 7, further including selecting the diode with a surge current rating not exceeding about 150 percent of the rated surge current of the overvoltage protection device. 9. The method of claim 7, further including constructing the diode with a small-area junction to reduce device capacitance, and forming said small area junction as a lightly doped junction to provide a high reverse breakdown voltage. 10. The method of claim 7, further including selecting the diode with a capacitance no larger than about 20 pf at zero volt bias. 11. The method of claim 7, further including selecting the overvoltage protection device and at least two diodes of said bridge to achieve an overall circuit capacitance no larger than about 20 pf at zero volt bias.

이 특허에 인용된 특허 (23) 인용/피인용 타임라인 분석

Napiorkowski, John J., Apparatus and method for reducing and balancing the capacitance of overvoltage protector in high frequency transmissions.
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Simpson, Claude O.; Gerwig, Mark O.; Storm, David G.; Zeng, Rong, Automated prefix dialing system.
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Atkins Ian P. (Swindon GB2), Circuit protection arrangement.
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Weiss Lawrence D. (New York NY) Kawan Joseph C. (Hollywood CA) Roth Leslie (Plainview NY) Vollmer Jim R. (Los Angeles CA) Tucci Morris L. (Van Nuys CA) Takata Melvin M. (Hermosa Beach CA) Samulon Alf, Computer and telephone apparatus with user friendly computer interface and enhanced integrity features.
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Kelberlau Ulrich,DEX ; Zommer Nathan, High voltage power MOS device.
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Sacca, Frank, High-voltage protection circuitry in a data access arrangement.
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Nishizawa,Hirotaka; Yukawa,Yosuke; Totsuka,Takashi, IC card with controller and memory chips.
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Martin Philip T. (Raleigh NC), Lightning protection circuit for digital subscriber loop interface.
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Peter Kobsa, Low capacitance surge protector for high speed data transmission.
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Carson Daniel B. (Bothell WA), Low impedance, high voltage protection circuit.
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Anceau Christine (Saint Roch FRX), Low voltage monolithic protection diode with a low capacitance.
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Tihanyi, Jenoe, MOSFET source, drain and gate regions in a trench between a semiconductor pillar and filling insulation.
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Chaudhry, Nisar A., Overvoltage and overcurrent protection system.
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Svedberg Per (Vallingby SEX), Overvoltage protection means for protecting low power semiconductor components.
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Napiorkowski, John J.; Wilken, Josh M., Overvoltage protector bridge circuit.
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Pistilli Antonio (Stittsville CAX), Protection of active telephone line interface circuits.
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Giebel Burkhard (Denzlingen DEX) Gehrig Wilfried W. (March DEX), Protective circuit for protecting contacts of monolithic integrated circuits by preventing parasitic latch up with other.
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Stevens Eugene H. (Newbury Park CA) Utlaut Mark W. (Scappoose OR), Signal generator for use in industrial positioning systems.
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Huang, Qin; Zhou, Xigen; Xu, Zhenxue, Solid-state DC circuit breaker.
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Dupuis,Timothy J.; Thompson,Charles D., Surge clamp protection circuit.
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Oka, Ritsuo, Surge protection semiconductor device.
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Chaudhry Nisar A., Surge suppressor.
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이 특허를 인용한 특허 (4) 인용/피인용 타임라인 분석

Naughton, Thomas P.; Pinney, David S., Lightning and surge protection for electronic circuits.
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Casey, Kelly C., Linear low capacitance overvoltage protection circuit using a blocking diode.
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Bark, Boris A.; Grande, Brad L.; Kiss, Peter; Ransijn, Johannes G.; Yoder, James D., Signal-powered integrated circuit with ESD protection.
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Araujo Ortega, Adrian; Urban, Richard J., Transmission bandwidth extender/category 6 surge protector.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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[미국특허] Linear low capacitance overvoltage protection circuit 원문보기

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[미국특허] Linear low capacitance overvoltage protection circuit 원문보기

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