초록

A Ti barrier film and a TiN barrier film are formed between a top-level pad made of copper or an alloy film mainly composed of copper and an Al pad. The Ti barrier film is formed to have a greater thickness than the TiN barrier film.

대표청구항 ▼

What is claimed is: 1. A semiconductor device comprising: a first wiring containing copper and formed above a semiconductor substrate; a first barrier film made of Ti formed on and in contact with the first wiring, and having a thickness of 100 nm or more; and a second wiring formed on the first ba

What is claimed is: 1. A semiconductor device comprising: a first wiring containing copper and formed above a semiconductor substrate; a first barrier film made of Ti formed on and in contact with the first wiring, and having a thickness of 100 nm or more; and a second wiring formed on the first barrier film, wherein the first wiring is a buried wiring buried in an insulating film. 2. The device of claim 1, wherein the second wiring is made of Al or Al alloy. 3. The device of claim 1, wherein the second wiring is a pad for bonding. 4. A semiconductor device comprising: a first wiring containing copper and formed above a semiconductor substrate; a first barrier film made of Ti formed on and in contact with the first wiring; a second barrier film made of TiN formed on the first barrier film and having a smaller thickness than the first barrier film; and a second wiring formed on the second barrier film, wherein the first wiring is a buried wiring buried in an insulating film. 5. The device of claim 4, wherein the first barrier film has a thickness of 100 nm or more, and the second barrier film has a thickness of 10 nm or more. 6. The device of claim 4, wherein the second wiring is made of Al or Al alloy. 7. The device of claim 4, wherein the second wiring is a pad for bonding. 8. The device of claim 1 further comprising a passivation film formed on the first wiring, wherein the first barrier film includes a first portion being in contact with the first wiring and located in an opening formed in the passivation film, and a second portion being in contact with the passivation film and located around the first portion. 9. The device of claim 8, wherein the passivation film is made of SiN. 10. The device of claim 8, wherein the passivation film has a thickness of 150 nm through 300 nm. 11. The device of claim 8, wherein the first wiring is made of Cu or Cu alloy, and the second wiring is made of Al or Al alloy. 12. The device of claim 1, wherein the second wiring is an Al pad, and a copper density in the Al pad is 0.1% or lower. 13. The device of claim 1, wherein to the bottom of the first wiring, a connection via is connected. 14. The device of claim 4 further comprising a passivation film formed on the first wiring, wherein the first barrier film includes a first portion being in contact with the first wiring and located in an opening formed in the passivation film, and a second portion being in contact with the passivation film and located around the first portion. 15. The device of claim 14, wherein the passivation film is made of SiN. 16. The device of claim 14, wherein the passivation film has a thickness of 150 nm through 300 nm. 17. The device of claim 14, wherein the first wiring is made of Cu or Cu alloy, and the second wiring is made of Al or Al alloy. 18. The device of claim 4, wherein the second wiring is an Al pad, and a copper density in the Al pad is 0.1% or lower. 19. The device of claim 4, wherein to the bottom of the first wiring, a connection via is connected.