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Precursor compositions for the deposition of electronic features such as resistors and dielectric components and methods for the deposition of the precursor compositions. The precursor compositions have a low viscosity, such as not greater than about 1000 centipoise and can be deposited using a dire

Precursor compositions for the deposition of electronic features such as resistors and dielectric components and methods for the deposition of the precursor compositions. The precursor compositions have a low viscosity, such as not greater than about 1000 centipoise and can be deposited using a direct-write tool. The precursors also have a low conversion temperature, enabling the formation of electronic features on a wide variety of substrates, including low temperature substrates.

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What is claimed is: 1. A method for the fabrication of an inorganic resistor on a substrate, comprising the steps of: (a) providing a substrate; (b) depositing a resistor precursor composition onto said substrate using a direct-write tool, said resistor precursor composition having a viscosity of n

What is claimed is: 1. A method for the fabrication of an inorganic resistor on a substrate, comprising the steps of: (a) providing a substrate; (b) depositing a resistor precursor composition onto said substrate using a direct-write tool, said resistor precursor composition having a viscosity of not greater than about 100 centipoise and comprising: i) at least a first molecular precursor compound; and ii) at least first particles selected from the group consisting of metal particles, metal oxide particles and carbon and carbon particles; (c) heating said resistor precursor composition to a temperature of not greater than about 350° C. to convert said resistor precursor composition to an inorganic resistor. 2. A method as recited in claim 1, wherein said substrate is an organic substrate. 3. A method as recited in claim 1, wherein said substrate comprises polyimide. 4. A method as recited in claim 1, wherein said resistor precursor composition comprises a molecular precursor compound to a metal. 5. A method as recited in claim 1, wherein said resistor precursor composition comprises a molecular precursor compound to a transition metal. 6. A method as recited in claim 1, wherein said resistor precursor composition comprises a molecular precursor compound to silver. 7. A method as recited in claim 1, wherein said resistor precursor composition comprises a molecular precursor compound to a metal oxide. 8. A method as recited in claim 1, wherein said first particles comprise metal particles. 9. A method as recited in claim 1, wherein said depositing step comprises depositing said precursor composition using an ink-jet device. 10. A method as recited in claim 1, wherein said depositing step comprises depositing said precursor composition using an aerosol jet. 11. A method as recited in claim 1, wherein said heating step comprises heating to a temperature of not greater than about 250° C. 12. A method as recited in claim 1, further comprising the step of modifying a first portion of said substrate, wherein said first portion is adapted to confine said deposited resistor precursor composition. 13. A method as recited in claim 1, further comprising the step of modifying a first portion of said substrate, wherein said first portion is modified to have a surface energy that is different than the surface energy on a second portion of said substrate, and wherein said first portion is adapted to confine said deposited resistor precursor composition. 14. A method as recited in claim 12, wherein said step of modifying a first portion comprises coating said first portion with a hydrophobic surface agent. 15. A method as recited in claim 12, wherein said step of modifying a first portion comprises coating said first portion with a hydrophilic surface agent. 16. A method as recited in claim 1, wherein said resistor precursor composition further comprises a reducing agent. 17. A method as recited in claim 8, wherein said metal particles comprise silver. 18. A method as recited in claim 17, wherein said metal particles further comprise platinum. 19. A method as recited in claim 17, wherein said metal particles further comprise palladium. 20. A method as recited in claim 8, wherein said metal particles comprise NiCr. 21. A method as recited in claim 8, wherein said first molecular precursor compound is a precursor to an insulative phase. 22. A method as recited in claim 21, wherein said insulative phase comprises a glass. 23. A method as recited in claim 8, wherein said resistor precursor composition further comprises second particles, wherein said second particles comprise glass particles. 24. A method as recited in claim 8, wherein said metal particles comprise nanoparticles. 25. A method as recited in claim 1, wherein said first particles comprise metal oxide particles. 26. A method as recited in claim 25, wherein said metal oxide particles comprise complex metal oxide particles. 27. A method as recited in claim 25, wherein said metal oxide particles comprise ruthenate particles. 28. A method as recited in claim 25, wherein said metal oxide particles comprise ruthenate particles selected from the group consisting of lead ruthenate and bismuth ruthenate particles. 29. A method as recited in claim 25, wherein said metal oxide particles comprise nanoparticles. 30. A method as recited in claim 1, wherein said first particles comprise glass particles. 31. A method as recited in claim 30, wherein said glass particles comprise borosilicate glass particles. 32. A method as recited in claim 1, wherein said first particles are carbon particles. 33. A method as recited in claim 32, wherein said carbon particles comprise graphitic carbon. 34. A method as recited in claim 1, wherein said resistor precursor composition comprises not greater than about 75 wt. % particles. 35. A method as recited in claim 1, wherein said resistor precursor composition comprises from about 5 wt. % to about 50 wt. % particles. 36. A method as recited in claim 1, wherein said resistor precursor composition comprises from about 5 to about 50 wt. % nanoparticles. 37. A method as recited in claim 1, wherein said resistor precursor composition comprises from about 30 wt. % to about 60 wt. % of said molecular precursor compound. 38. A method as recited in claim 1, wherein said molecular precursor compound comprises ruthenium.