Applications of semiconductor nano-sized particles for photolithography
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G03F-007/26
G03F-007/20
출원번호
UP-0792377
(2004-03-04)
등록번호
US-7524616
(2009-07-01)
발명자
/ 주소
Chen, Zhiyun
Fleet, Erin F.
Cooper, Gregory
출원인 / 주소
Pixelligent Technologies LLC
대리인 / 주소
Nixon & Vanderhye PC
인용정보
피인용 횟수 :
2인용 특허 :
10
초록▼
Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing mat
Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing materials as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.
대표청구항▼
The invention claimed is: 1. A method of performing immersion photolithography comprising: projecting light along an optical path to form a light pattern on a substrate comprising a wafer that is at least in part coated with a layer comprising photoresist, at least a portion of said light passing t
The invention claimed is: 1. A method of performing immersion photolithography comprising: projecting light along an optical path to form a light pattern on a substrate comprising a wafer that is at least in part coated with a layer comprising photoresist, at least a portion of said light passing through (a) at least one photomask with at least one pattern, (b) at least final optics, and (c) a medium having semiconductor nano-sized particles dispersed therein, said semiconductor nano-sized particles having a refractive index higher than said medium, the semiconductor nano-sized particle dispersed medium filling up space between said final optics and said substrate; collecting on said photoresist, a portion of said light passing through said at least one photomask, said final optics and the semiconductor nano-sized Particle dispersed medium; and changing the solubility of said photoresist at least in part in response to said collected light pattern. 2. The method of claim 1 wherein said medium comprises a liquid, polymer or a gel. 3. The method of claim 2 wherein said light has a wavelength of 193 nm. 4. The method of claim 1 wherein said medium comprises water. 5. The method of claim 4 wherein said light has a wavelength of 193 nm. 6. The method of claim 4 wherein said light has a wavelength of 248 nm. 7. The method of claim 1 wherein the nano-sized particle dispersed medium is flowed continuously through the space between said final optics and said coated wafer. 8. The method of claim 7 wherein said medium comprises water. 9. The method of claim 7 wherein said light has a wavelength of 193 nm. 10. The method of claim 1 wherein the said semiconductor nano-sized particles are selected from the group consisting of C, Si, Ge, CuCl, CuBr, CuI, AgCl, AgBr, AgI, Ag2S, CaO, MgO, ZnO, MgxZn1-xO, ZnS, HgS, ZnSe, CdS, CdSe, CdTe, HgTe, PbS, BN, AlN, GaN, AlxGa1-xN, GaP GaAs, GaSb, InP, InAs, InxGa1-xAs, SiC, Si1-xGex, Si3N4, ZrN, CaF2, YF3, Al2O3, SiO2, TiO2, Cu2O, Zr2O3, ZrO2, SnO2, YSi2, GaInP2, Cd3P2, Fe2S, Cu2S, CuIn2S2, MoS2, In2S3, Bi2S3, CuIn2Se2, In2Se3, HgI2, PbI2, Landthoids oxides, and their various alloys. 11. The method of claim 1 wherein said semiconductor nano-sized particles have bandgaps. 12. The method of claim 1 wherein said nano-sized particles are transparent at least at one of lithographic wavelengths. 13. The method of claim 1 wherein said nano-sized particles comprise nanocrystals. 14. The method of claim 1 wherein said light has a wavelength of 193 nm. 15. The method of claim 1 wherein said light has a wavelength of 157 nm. 16. The method of claim 1 wherein said light has a wavelength of 248 nm. 17. The method of claim 1 wherein said light has a wavelength of 365 nm. 18. The method of claim 1 wherein said nano-sized particles are dispersed in water and the nano-sized particle dispersed water is flowed continuously through the space between said final optics and said coated wafer; said light has a wavelength of 193 nm; and said nano-sized particles comprise nanocrystals that are transparent at 193 nm. 19. The method of claim 1 wherein said medium is a liquid, a polymer, or a gel and the nano-sized particle dispersed medium is flowed continuously through the space between said final optics and said coated wafer; said light has a wavelength of 193 nm; and said nano-sized particles comprise nanocrystals that are transparent at 193 nm. 20. The method of claim 1 wherein said nano-sized particles are dispersed in water and the nano-sized particle dispersed water is flowed continuously through the space between said final optics and said coated wafer; said light has a wavelength of 248 nm; and said nano-sized particles comprise nanocrystals that are transparent at 248 nm. 21. The method of claim 1 wherein said medium is a liquid, a polymer, or a gel and the nano-sized particle dispersed medium is flowed continuously through the space between said final optics and said coated wafer; said light has a wavelength of 248 nm; and said nano-sized particles comprise nanocrystals that are transparent at 248 nm. 22. The method of claim 1 wherein said nano-sized particles are dispersed in water and the nano-sized particle dispersed water is flowed continuously through the space between said final optics and said coated wafer; said light has a wavelength of 193 nm; and said nano-sized particles comprise nanocrystals. 23. The method of claim 1 wherein said medium is a liquid, a polymer, or a gel and the nano-sized particle dispersed medium is flowed continuously through the space between said final optics and said coated wafer; said light has a wavelength of 193 nm; and said nano-sized particles comprise nanocrystals. 24. The method of claim 1 wherein said nano-sized particles are dispersed in water and the nano-sized particle dispersed water is flowed continuously through the space between said final optics and said coated wafer; said light has a wavelength of 248 nm; and said nano-sized particles comprise nanocrystals. 25. The method of claim 1 wherein said medium is a liquid, a polymer, or a gel and the nano-sized particle dispersed medium is flowed continuously through the space between said final optics and said coated wafer; said light has a wavelength of 248 nm; and said nano-sized particles comprise nanocrystals.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (10)
Sung H. Choi ; Martin S. Leung ; Gary W. Stupian ; Nathan Presser, Electron beam lithography method forming nanocrystal shadowmasks and nanometer etch masks.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.