[특허]Agglomeration elimination for metal sputter deposition of chalcogenides

Agglomeration elimination for metal sputter deposition of chalcogenides 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-027/00
출원번호	UP-0758009 (2004-01-16)
등록번호	US-7528401 (2009-07-01)
발명자 / 주소	Li, Jiutao
출원인 / 주소	Micron Technology, Inc.
대리인 / 주소	Dickstein Shapiro LLP
인용정보	피인용 횟수 : 2 인용 특허 : 179

초록 ▼

A method for fabricating chalcogenide materials on substrates, which reduces and/or eliminates agglomeration of materials on the chalcogenide materials; and system and devices for performing the method, semiconductor devices so produced, and machine readable media containing the method. One method disclosed includes forming a first layer, forming a second layer on the first layer, forming a third layer on the second layer, wherein the third layer is essentially transparent to irradiation, and irradiating the second layer through the third layer to cause the second layer to diffuse into the first layer thereby creating an integral layer of materials from the first and second layers.

대표청구항 ▼

What is claimed is: 1. A structure comprising: a first conductive material overlying a substrate; a chalcogenide material overlying the first conductive material; a silver material in physical contact with the chalcogenide material; and a barrier material on and in physical contact with the silver material, the barrier material being a same material as the chalcogenide material and being essentially transparent to ultraviolet radiation. 2. A structure comprising: a first electrode overlying a substrate; a chalcogenide material overlying the first electrode; a metal material in physical contact with the chalcogenide material; and chalcogenide barrier material on and in physical contact with the metal material, the barrier material being a same material as the chalcogenide material and being essentially transparent to ultraviolet radiation. 3. The structure of claim 2, wherein the chalcogenide barrier and the chalcogenide material are formed of the same material. 4. The structure of claim 2, wherein the same material is GeSe. 5. The structure of claim 3, wherein the metal material includes silver. 6. The structure of claim 2 wherein the barrier material comprises germanium-selenide. 7. The structure of claim 1 wherein the barrier material reduces agglomeration from the silver material. 8. The structure of claim 1 wherein the silver material is formed to a thickness in a range of about 100 Å to about 200 Å. 9. The structure of claim 1 wherein the barrier material is formed to a thickness in a range of about 20 Å to about 50 Å. 10. The structure of claim 1 wherein the barrier material is formed to a thickness of about 30 Å. 11. The structure of claim 1 wherein the chalcogenide material is formed to a thickness in a range of about 500 Å to about 1000 Å.

이 특허에 인용된 특허 (179)

Li, Jiutao, Agglomeration elimination for metal sputter deposition of chalcogenides.
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Li, Jiutao, Agglomeration elimination for metal sputter deposition of chalcogenides.
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Li, Jiutao, Agglomeration elimination for metal sputter deposition of chalcogenides.
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Li, Jiutao, Agglomeration elimination for metal sputter deposition of chalcogenides.
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Klose Peter H. (Troy MI) Ovshinsky Stanford R. (Bloomfield Hills MI), Structure and method for producing an image.
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Keem John E. (Bloomfield Hills MI) Ovshinsky Stanford R. (Bloomfield Hills MI) Sadate-Akhavi Hossein (Bloomfield Hills MI) Chen Juei-Teng (Sterling Heights MI) Kadin Alan M. (Troy MI), Superconducting films and devices exhibiting AC to DC conversion.
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Masters Joseph I. (Cambridge MA) Goldberg Gershon M. (Arlington MA) Lavine Jerome M. (Lincoln MA), Surface sensitized chalcogenide product and process for making and using the same.
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Klersy Patrick J. (Madison Heights MI) Ovshinsky Stanford R. (Bloomfield Hills MI), Switch with improved threshold voltage.
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Wolf Ronald M. (Eindhoven NLX) Blom Paulus W. M. (Eindhoven NLX) Krijn Marcellinus P. C. M. (Eindhoven NLX), Switching element with memory provided with Schottky tunnelling barrier.
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Lowrey, Tyler A.; Parkinson, Ward D.; Gill, Manzur, Technique and apparatus for performing write operations to a phase change material memory device.
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Pryor Roger W. (Bloomfield Hills MI) Formigoni Napoleon P. (Birmingham MI) Ovshinsky Stanford R. (Bloomfield Hills MI), Thin film electrical devices with amorphous carbon electrodes and method of making same.
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Ovshinsky Stanford R. (Bloomfield Hills MI) Johnson Robert R. (Franklin MI) Hudgens Stephen J. (Southfield MI) Pryor Roger W. (Bloomfield Hills MI) Wicker Guy C. (Rochester Hills MI) Nolan Robert S. , Thin film electro-optical devices.
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Ovshinsky Stanford R. (Bloomfield Hills MI) Hudgens Stephen J. (Southfield MI), Thin film field effect transistor.
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Ovshinsky Stanford R. (Bloomfield Hills MI) Hudgens Stephen J. (Southfield MI), Thin film field effect transistor and method of making same.
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Ovshinsky Stanford R. (Bloomfield Hills MI) Hudgens Stephen J. (Southfield MI), Thin film field effect transistor and method of making same.
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Pryor Roger W. (Bloomfield Hills MI) Formigoni Napoleon P. (Birmingham MI) Ovshinsky Stanford R. (Bloomfield Hills MI), Thin film overvoltage protection devices.
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Klersy Patrick J. (Madison Heights MI) Jablonski David C. (Waterford MI) Ovshinsky Stanford R. (Bloomfield Hills MI), Thin-film structure for chalcogenide electrical switching devices and process therefor.
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Tyler Lowrey, Three-dimensional (3D) programmable device.
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Kenny King-tai Ngan ; Seshadri Ramaswami, Ti/Tinx underlayer which enables a highly <111> oriented aluminum interconnect.
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Xu, Daniel; Bengu, Erman; Jin, Ming, Trench sidewall profile for device isolation.
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Liaw Jhon-Jhy,TWX ; Yang Ching-Yau,TWX, Two step barrier process.
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Ovshinsky Stanford R. ; Pashmakov Boil, Universal memory element and method of programming same.
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Ovshinsky Stanford R. ; Pashmakov Boil, Universal memory element with systems employing same and apparatus and method for reading, writing and programming same.
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Chiang, Chien, Using selective deposition to form phase-change memory cells.
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Lowrey, Tyler A.; Dennison, Charles H., Utilizing atomic layer deposition for programmable device.
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Ovshinsky Stanford R. (Bloomfield Hills MI) Guha Subhendu (Clawson MI) Nath Prem (Rochester MI) Yang Chi C. (Troy MI) Fournier Jeffrey (St. Clair Shores MI) Kulman James (Detroit MI), Vapor deposition of semiconductor material.
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Ovshinsky Herbert (Oak Park MI), Vertical semiconductor processor.
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Ovshinsky Stanford R. (Bloomfield Hills MI) Wicker Guy (Southfield MI), Vertically interconnected parallel distributed processor.
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Harshfield Steven T., ZPROM manufacture and design and methods for forming thin structures using spacers as an etching mask.
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Dahmani, Faiz, Method of fabrication of programmable memory microelectric device.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

내보내기 구분	파일저장 인쇄 메일전송
구성항목	기본정보 상세정보 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표IPC 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 공고번호, 공고일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표출원인, 출원인국적, 출원인주소, 발명자, 발명자E, 발명자코드, 발명자주소, 발명자 우편번호, 발명자국적, 대표IPC, IPC코드, 요약, 미국특허분류, 대리인주소, 대리인코드, 대리인(한글), 대리인(영문), 국제공개일자, 국제공개번호, 국제출원일자, 국제출원번호, 우선권, 우선권주장일, 우선권국가, 우선권출원번호, 원출원일자, 원출원번호, 지정국, Citing Patents, Cited Patents
저장형식	Text(ASCII format) Excel format PIAS분석(.xls)
메일정보	받는사람 (필수) @ 보내는사람 (선택) @ 제목 내용 KISTI 검색결과 이메일 서비스
안내	총 건의 자료가 검색되었습니다. 다운받으실 자료의 인덱스를 입력하세요. (1-10,000) 검색결과의 순서대로 최대 10,000건 까지 다운로드가 가능합니다. 데이타가 많을 경우 속도가 느려질 수 있습니다.(최대 2~3분 소요) 다운로드 파일은 UTF-8 형태로 저장됩니다. 파일의 내용이 제대로 보이지 않을실 때는 웹브라우저 상단의 보기 -> 인코딩 -> 자동선택 여부를 확인하십시오. ~ Text(ASCII format) Excel format

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Agglomeration elimination for metal sputter deposition of chalcogenides 원문보기

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Agglomeration elimination for metal sputter deposition of chalcogenides 원문보기

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