초록 ▼

A Class-E power amplifier includes a choke and a switch connected in series between a source of a supply voltage and circuit ground and connected to an inductively coupled coil. An output node of the amplifier is formed between choke and the switch and connected to a transmitter antenna. A shunt cap

A Class-E power amplifier includes a choke and a switch connected in series between a source of a supply voltage and circuit ground and connected to an inductively coupled coil. An output node of the amplifier is formed between choke and the switch and connected to a transmitter antenna. A shunt capacitor couples the amplifier's output node to the circuit ground. A feedback signal, indicating an intensity if the signal at the amplifier output node is used to vary the input signal to the Class-E power amplifier and thereby control operation of the switch.

대표청구항 ▼

What is claimed is: 1. A Class-E radio frequency power amplifier system that receives a radio frequency input signal and that drives a load, said Class-E radio frequency power amplifier comprising: a switch; a choke connected in series with the switch between a source of a supply voltage and circui

What is claimed is: 1. A Class-E radio frequency power amplifier system that receives a radio frequency input signal and that drives a load, said Class-E radio frequency power amplifier comprising: a switch; a choke connected in series with the switch between a source of a supply voltage and circuit ground, with an amplifier output node being formed between choke and the switch and connected to the load; a shunt capacitor coupling the amplifier output node to the circuit ground; an output sensor which produces a feedback signal indicating an intensity of a signal applied to the load; and a pulse width modulator that produces an output signal having pulses of the radio frequency input signal wherein the pulses have a duty cycle that varies in response to the feedback signal, and wherein the output signal controls operation of the switch. 2. The Class-E radio frequency power amplifier system as recited in claim 1 wherein the switch is selected from a group consisting of a semiconductor device and a MOSFET. 3. The Class-E radio frequency power amplifier system as recited in claim 1 wherein the switch is a semiconductor device and the feedback signal is proportional to an induced voltage at the load. 4. The Class-E radio frequency power amplifier system as recited in claim 1 wherein the switch is a MOSFET that has a channel resistance and a peak current rating, wherein an arithmetic product of the channel resistance and the peak current rating is less than 3% of the supply voltage applied to the Class-E amplifier. 5. The Class-E radio frequency power amplifier system as recited in claim 1 wherein the switch is rated to conduct a transient current level that is at least ten times a maximum level of a current that the switch is expected to conduct. 6. The Class-E radio frequency power amplifier system as recited in claim 1 wherein the radio frequency input signal has an envelope defined by a control signal. 7. The Class-E radio frequency power amplifier system as recited in claim 1 wherein the amplifier is a component of an MRI scanner. 8. The Class-E radio frequency power amplifier system as recited in claim 1 wherein the amplifier supplies energy to a device implanted in an animal. 9. The Class-E radio frequency power amplifier system as recited in claim 1 wherein the amplifier enables modulated data transmission with power amplification. 10. The Class-E radio frequency power amplifier system as recited in claim 1 wherein the amplifier responds to rectangular pulses derived from non-linear manipulation of a sinusoidal envelope voltage.