초록 ▼

A method of minimizing stress in an OLED device laser sealing process using an elongated laser beam. A laser beam having an intensity distribution which decreases as a function of distance from the longitudinal axis of the beam is passed through a mask to create an elongated beam having a length-wis

A method of minimizing stress in an OLED device laser sealing process using an elongated laser beam. A laser beam having an intensity distribution which decreases as a function of distance from the longitudinal axis of the beam is passed through a mask to create an elongated beam having a length-wise intensity distribution which decreases as a function of distance from the axis of the beam and a substantially constant width-wise intensity distribution. The elongated beam is traversed over a line of frit disposed between two substrates. The tails of the length-wise intensity distribution provide for a slow cool down of the frit as the beam traverses the line of frit.

대표청구항 ▼

What is claimed is: 1. A method of encapsulating a display element comprising: providing a first substrate and a second substrate separated by at least one frit wall, and at least one display element disposed between the first and second substrates; impinging a laser beam on the at least one frit w

What is claimed is: 1. A method of encapsulating a display element comprising: providing a first substrate and a second substrate separated by at least one frit wall, and at least one display element disposed between the first and second substrates; impinging a laser beam on the at least one frit wall through the first substrate; traversing the beam along a length of the wall to heat the frit wall and seal the first substrate to the second substrate; and wherein an intensity distribution of the impinging beam in a direction of travel of the beam is decreasing as a function of distance from a longitudinal axis of the beam, and an intensity distribution of the impinging beam in a direction orthogonal to the direction of travel varies by no more than about 10% from a peak intensity of the beam. 2. The method according to claim 1 wherein the frit wall comprises a closed frame. 3. The method according to claim 1 wherein the beam has a spot diameter greater than a width wf of the frit wall. 4. The method according to claim 1 wherein the beam passes through a mask comprising a transparent slit prior to impinging on the frit. 5. The method according to claim 4 wherein the mask is disposed over the first substrate. 6. The method according to claim 4 wherein the mask comprises a reflective surface. 7. The method according to claim 1 wherein the beam is traversed at a speed greater than about 10 mm/s. 8. The method according to claim 1 wherein the beam is traversed at a speed greater than about 30 mm/s. 9. The method according to claim 1 wherein the traversing comprises reflecting the beam from at least one moving reflector. 10. The method according to claim 1 wherein the reflector is moved by a galvonometer. 11. The method according to claim 1 wherein the frit wall has a height between 10 and 30 μm. 12. The method according to claim 1 wherein the mask comprises an absorbing surface. 13. The method according to claim 3 wherein the spot diameter is greater than about 2 times the width wf of the frit wall.