초록 ▼

A process for producing a silicon nitride compound is presented. A starting solution comprising fluorosilicic acid is provided. The starting solution is derived from a silicon, etching process wherein silicon is etched with a solution comprising hydrofluoric acid and where silicon powder has been

A process for producing a silicon nitride compound is presented. A starting solution comprising fluorosilicic acid is provided. The starting solution is derived from a silicon, etching process wherein silicon is etched with a solution comprising hydrofluoric acid and where silicon powder has been removed. The starting solution is heated to yield a vapor solution comprising silicon tetrafluoride, hydrogen fluoride, and water. The hydrogen fluoride is separated from the vapor solution wherein a pure stream of silicon tetrafluoride and water vapor remain. The silicon tetrafluoride and water vapor are hydrolyzed to yield a concentrated fluorosilicic acid solution. The fluorosilicic acid is reacted with a base to yield a fluorosilicic salt. The fluorosilicic salt is heated to yield anhydrous silicon tetrafluoride. The anhydrous silicon tetrafluoride is reacted with a metal hydride to yield a monosilane. The monosilane is reacted to form a silicon compound and a silicon nitride compound. The silicon and the silicon nitride compounds are recovered. In an alternate embodiment, the hydrogen fluoride is recovered from the reaction process and reintroduced into the porous silicon etching process.

대표청구항 ▼

What is claimed is: 1. A process for producing a silicon nitride compound, the process comprising the steps of: a) providing a starting solution derived from a silicon etching process wherein silicon is etched with a solution comprising hydrofluoric acid and wherein silicon powder has been removed,

What is claimed is: 1. A process for producing a silicon nitride compound, the process comprising the steps of: a) providing a starting solution derived from a silicon etching process wherein silicon is etched with a solution comprising hydrofluoric acid and wherein silicon powder has been removed, the starting solution comprising fluorosilicic acid; b) heating the starting solution to yield a vapor solution comprising silicon tetrafluoride, hydrogen fluoride and water; c) separating the hydrogen fluoride from the vapor solution wherein a pure stream of silicon tetrafluoride and water vapor remain; d) hydrolyzing the silicon tetrafluoride and water vapor to yield a concentrated fluorosilicic acid solution; e) reacting the fluorosilicic acid with a base to yield a fluorosilicic salt; f) heating the fluorosilicic salt to yield anhydrous silicon tetrafluoride; g) reacting the anhydrous silicon tetrafluoride with a metal hydride to yield a monosilane; h) reacting the monosilane to form a silicon nitride compound; and i) recovering the silicon nitride compound. 2. A process according to claim 1, wherein the starting solution further comprises hydrofluoric acid and nitric acid. 3. A process according to claim 2, wherein the starting solution is heated to yield hydrogen fluoride and nitrogen oxide which are separated from silicon tetrafluoride by selective absorption, selective adsorption, a cryogenic trap, or distillation. 4. A process according to claim 3, wherein the hydrogen fluoride is separated from silicon tetrafluoride by selective absorption, selective adsorption, a cryogenic trap, or distillation. 5. A process according to claim 1, wherein fluorosilicic acid is reacted with a base selected from the group consisting of: NaOH, Na2CO3, KOH, and NH4OH. 6. A process according to claim 1, wherein the metal hydride is selected from the group consisting of: calcium hydride, potassium hydride, lithium hydride, and sodium hydride. 7. A process according to claim 1, further comprising the step of reacting the monosilane with either ammonia or nitrogen to form a silicon nitride compound. 8. A process according to claim 1, further comprising the step of employing a plasma assisted process to form a silicon nitride compound from the monosilane. 9. A process according to claim 1, further comprising the step of pyrolyzing the monosilane to form silicon. 10. A process according to claim 9, wherein the silicon is nitrided to form a silicon nitride compound. 11. A process according to claim 1, further comprising the steps of halogenating the monosilane to form a halogenated silane and reacting the halogenated silane with an amine to form a silicon nitride compound. 12. A process according to claim 1, further comprising the steps of oxidizing the monosilane to form silicon dioxide and using carbothermal nitridation to form a silicon nitride compound. 13. A process according to claim 1, further comprising the steps of recovering the hydrogen fluoride and reintroducing the hydrogen fluoride into the porous silicon etching process.