초록 ▼

From the viewpoint of manufacturing an SiC semiconductor device economically, a present Si device manufacturing line is utilized to make it possible to handle a small-diameter SiC wafer. Polycrystal SiC is grown from at least one surface side of a small-diameter a-SiC single crystal wafer so as to b

From the viewpoint of manufacturing an SiC semiconductor device economically, a present Si device manufacturing line is utilized to make it possible to handle a small-diameter SiC wafer. Polycrystal SiC is grown from at least one surface side of a small-diameter a-SiC single crystal wafer so as to be in a size of an outer diameter corresponding to a handling device of an existing semiconductor manufacturing line, and thereafter the polycrystal SiC on the surface of the α-SiC single crystal wafer is ground to manufacture an increased-diameter SiC of a double structure in which the polycrystal SiC is grown around an outer circumference of the small-diameter α-SiC single crystal wafer.

대표청구항 ▼

The invention claimed is: 1. A manufacturing method of a large-diameter SiC wafer comprising the steps of: placing a small diameter α-SiC single crystal wafer on a graphite plate; forming a film of polycrystal SiC around an outer circumference of said wafer by depositing polycrystal SiC over t

The invention claimed is: 1. A manufacturing method of a large-diameter SiC wafer comprising the steps of: placing a small diameter α-SiC single crystal wafer on a graphite plate; forming a film of polycrystal SiC around an outer circumference of said wafer by depositing polycrystal SiC over the graphite plate and over a surface of the α-SiC single crystal wafer; grinding the polycrystal SiC on the surface of the α-SiC single crystal wafer to manufacture an increased-diameter SiC of a double structure in which the polycrystal SiC plate portion is planarly formed around an outer circumference of the small-diameter a-SiC single crystal wafer; and wherein a top and bottom surface of the small diameter α-SiC single crystal wafer is free of the polycrystal SiC. 2. The manufacture method according to claim 1, further comprising: masking the α-SiC single crystal wafer with a mask; depositing the polycrystal SiC over the graphite plate on the mask; and removing the mask in the grinding, thereby forming the large-diameter SiC wafer.