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Trisilane is used in chemical vapor deposition methods to deposit silicon-containing films over mixed substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher man

Trisilane is used in chemical vapor deposition methods to deposit silicon-containing films over mixed substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. An example is in forming the base region of a heterojunction bipolar transistor, including simultaneous deposition over both single crystal semiconductor surfaces and amorphous insulating regions.

대표청구항 ▼

I claim: 1. A method of reducing the number of steps in a semiconductor device manufacturing process, comprising: identifying a semiconductor device manufacturing process that comprises: (a) depositing a first silicon-containing film onto a single-crystal surface and a non-epitaxial surface, (b) fo

I claim: 1. A method of reducing the number of steps in a semiconductor device manufacturing process, comprising: identifying a semiconductor device manufacturing process that comprises: (a) depositing a first silicon-containing film onto a single-crystal surface and a non-epitaxial surface, (b) forming a mask over the non-epitaxial surface to protect the first silicon-containing film over the non-epitaxial surface, (c) etching the first silicon-containing film over the single-crystal surface to expose the single-crystal surface, and (d) depositing a second silicon-containing film onto the exposed single-crystal surface; and modifying the semiconductor device manufacturing process by eliminating steps (b), (c), and (d) to provide a modified process capable of depositing in a single step a silicon-containing film that is epitaxial on the single-crystal surface and non-epitaxial on the non-epitaxial surface. 2. The method of claim 1, wherein the modified process comprises using trisilane to deposit in a single step the epitaxial film on the single-crystal surface and the non-epitaxial film on the non-epitaxial surface. 3. The method of claim 2, wherein the modified process comprises using trisilane in place of a silicon source selected from the group consisting of silane, disilane, dichlorosilane, trichlorosilane and silicon tetrachloride. 4. The method of claim 3, wherein the modified process comprises using trisilane in place of silane. 5. The method of claim 1, wherein depositing the first silicon-containing film in the semiconductor device manufacturing process before it is modified comprises depositing a polycrystalline film over the single crystal surface and the non-epitaxial surface. 6. The method of claim 1, wherein the non-epitaxial surface is amorphous. 7. The method of claim 1, wherein the non-epitaxial surface is polycrystalline. 8. A method of reducing the number of steps in a semiconductor device manufacturing process, comprising: identifying a semiconductor device manufacturing process, wherein the semiconductor device manufacturing process comprises (a) depositing a first silicon-containing film onto a non-epitaxial surface and onto a single-crystal surface using a first silicon source, forming a mask over the non-epitaxial surface, after depositing the first silicon-containing film to protect the first silicon-containing film over the non-epitaxial surface; and etching the first silicon-containing film over the single-crystal surface to expose the single-crystal surface, prior to depositing the second silicon-containing film and, in a separate step, (b) depositing a second silicon-containing film onto the single-crystal surface using a second silicon source; wherein the first silicon source and the second silicon source are each individually selected from the group consisting of silane, disilane, dichlorosilane, trichlorosilane and silicon tetrachloride; and modifying the semiconductor device manufacturing process to form a modified process, the modified process comprising using trisilane in place of the first silicon source and the second silicon source, wherein the trisilane is capable of depositing a third silicon-containing film onto the single-crystal surface and the non-epitaxial surface in a single step. 9. A method of reducing the number of steps in a semiconductor device manufacturing process, comprising: identifying a semiconductor device manufacturing process, wherein the semiconductor device manufacturing process comprises (a) depositing a first silicon-containing film onto a non-epitaxial surface using a first silicon source and, in a separate step, (b) depositing a second silicon-containing film onto a single-crystal surface using a second silicon source; wherein the first silicon source and the second silicon source are silane; and modifying the semiconductor device manufacturing process to form a modified process, the modified process comprising using trisilane in place of the first silicon source and the second silicon source, wherein the trisilane is capable of depositing a third silicon-containing film onto the single-crystal surface and the non-epitaxial surface in a single step. 10. The method of claim 8, wherein the modifying of the semiconductor device manufacturing process comprises eliminating the steps of forming the mask and etching. 11. The method of claim 8, wherein the first silicon-containing film comprises a polycrystalline morphology.