초록 ▼

The invention is directed to an improved transistor that reduces dopant cross-diffusion and improves chip density. A first embodiment of the invention comprises gate electrode material partially removed at a junction of a first gate electrode region comprised of gate material doped with first ions f

The invention is directed to an improved transistor that reduces dopant cross-diffusion and improves chip density. A first embodiment of the invention comprises gate electrode material partially removed at a junction of a first gate electrode region comprised of gate material doped with first ions for a first device and second gate electrode region comprised of gate material doped with second ions for a second device. The respectively doped regions are connected by a silicide layer near the top surface of the gate conductors.

대표청구항 ▼

What is claimed is: 1. A method for forming a semiconductor structure, comprising: doping a gate material with ions of a first conductivity type in a first region of the gate material while substantially preventing a second region of the gate material from said first conductivity type doping; dopin

What is claimed is: 1. A method for forming a semiconductor structure, comprising: doping a gate material with ions of a first conductivity type in a first region of the gate material while substantially preventing a second region of the gate material from said first conductivity type doping; doping the gate material with ions of a second conductivity type in the second region while substantially preventing the first region of the gate material from said second conductivity type doping, the doping steps create a junction at which the first conductivity type doped region adjacently meets the second conductivity type doped region; and, removing a portion of the junction such that the first conductivity type doped region adjacently meets the second conductivity type doped region only at a remaining portion of the junction. 2. A method as in claim 1, further comprising: forming silicide over the gate material. 3. A method as in claim 1, the first doping step comprising masking the second region and implanting one of P-type dopant ions and N-type dopant ions in the first region. 4. A method as in claim 3, the second doping step comprising masking the first region and implanting one of P-type dopant ions and N-type dopant ions in the second region. 5. A method as in claim 4, the second doping step sequentially following the first doping step. 6. A method as in claim 1, the removing step comprising patterning a masking layer to expose the junction between the first and second regions and partially etching the gate material. 7. A method as in claim 1, the preventing step comprising masking said region with a polymer material. 8. A method as in claim 1, the gate material is partially removed before a dopant activation anneal step. 9. A method as in claim 1, wherein removing said portion of said junction comprises removing about 50 percent to about 70 percent of said junction, leaving a remaining portion of about 30 percent to about 50 percent.