초록 ▼

This invention relates to ionized PVD processing of semiconductor wafers and provides conditions for highly uniform deposition-etch process sequence and coverage capabilities of high aspect ratio (HAR) features within a single processing chamber. A plasma is generated and maintained by an inductivel

This invention relates to ionized PVD processing of semiconductor wafers and provides conditions for highly uniform deposition-etch process sequence and coverage capabilities of high aspect ratio (HAR) features within a single processing chamber. A plasma is generated and maintained by an inductively coupled plasma (ICP) source. A deposition process step is performed in which metal vapor is produced from a target of a PVD source. Location and sputter efficiency at the target surface is enhanced by moving a magnet pack to create a traveling or sweeping magnetic field envelope. The target is energized from a DC power supply and pressures effective for an efficient thermalization of the sputtered atoms (30<p<100 mTorr) are maintained in the chamber during deposition. A uniform thickness of the metal on the wafer is produced within each magnet sweeping cycle. Magnetic field localization using an annular sweeping motion over the entire target surface generates conditions for reasonable deposition rates, high target utilization, high ionization of the metal atoms, uniform flat field deposition and etching, and nearly identical conditions for HAR feature coverage at the center and edge of the wafer.

대표청구항 ▼

Therefore, the following is claimed: 1. An ionized physical deposition method comprising: sealing a substrate within a chamber of a processing apparatus; performing a deposition-etch process to deposit a film of material from a sputtering target on surfaces of high aspect ratio submicron features o

Therefore, the following is claimed: 1. An ionized physical deposition method comprising: sealing a substrate within a chamber of a processing apparatus; performing a deposition-etch process to deposit a film of material from a sputtering target on surfaces of high aspect ratio submicron features on the substrate; while performing the deposition-etch process, sweeping around a sputtering surface of the sputtering target a magnetic field that produces plasma confinement over the sputtering surface with relatively higher plasma confinement over only a portion of the sputtering surface of the sputtering target, the sweeping of the magnetic field being achieved by rotating a magnet assembly having magnets moveably mounted thereon about an axis of the sputtering target; and while sweeping the magnetic field around the sputtering surface, varying parameters of the magnetic field by changing the position of one or more magnets relative to the assembly as the assembly rotates about the axis so that the magnetic field changes with the angular position of the rotating magnet assembly; the changing of the position of the one or more magnets as the assembly rotates being controlled such that the target is sputtered non-uniformly in a way that compensates for at least some azimuthal non-uniformities on the substrate in the deposition-etch process so as to improve overall azimuthal uniformity of the process around the substrate. 2. The method of claim 1 further comprising: inductively coupling a high density plasma into a space within the chamber to produce ions of coating material to be deposited onto the substrate during the deposition portion of the deposition-etch process. 3. The method of claim 2 for depositing coatings on semiconductors having submicron, high aspect ratio wherein the performing of the ionized physical deposition process includes performing the deposition portion of the process at a pressure of at least approximately 30 mToff. 4. The method of claim 1 wherein: the sweeping includes rotating the magnetic field about a centerline of the target surface. 5. The method of claim 1 wherein: the sweeping includes moving the magnetic field through a plurality of cycles with the magnetic field configured to produce uniform deposition within each cycle. 6. An ionized physical vapor deposition apparatus comprising a controller configured to operate the apparatus according to the method of claim 1, and further comprising: a permanent magnet assembly rotatably mounted behind the sputtering target configured to produce the magnetic field, the magnet assembly having one or more permanent magnets moveably mounted thereto; and one or more actuators connected between the rotatable magnet assembly and the respective one or more moveably mounted permanent magnets, the actuators being responsive to the controller and operative to cause the field to sweep around the sputtering surface of the sputtering target. 7. The apparatus of claim 6 wherein the controller is programmed to move the one or more magnets to change the size of said portion of the sputtering surface. 8. The apparatus of claim 6 wherein: the permanent magnet assembly includes a plurality of magnet sectors; and the one or more actuators includes a plurality of actuators, each linked to a different one of the sectors, each responsive to the controller, and each operable to move the sectors so as to cause the field to sweep around the sputtering surface of the sputtering target. 9. The apparatus of claim 6 wherein: the permanent magnet assembly includes an annular magnet assembly having magnets around the circumference of the magnet assembly; and the one or more actuators is linked to a magnet pack and responsive to the controller, and is operable to move the magnet assembly in a gyro-motion so as to cause the field to sweep around the sputtering surface of the sputtering target. 10. An ionized physical vapor deposition apparatus comprising: a vacuum chamber operable to perform ionized physical vapor deposition on a substrate therein over a pressure range of from not more than approximately 1 mTorr to over 30 mTorr; a sputtering target having an axis centered on an axis of the sputtering chamber and a sputtering surface at one end of the chamber; a substrate support at an opposite end of the chamber from the sputtering target; an ICP source operable to inductively couple RF energy into a plasma in a process volume within the chamber to form a high density plasma therein; a magnet pack behind the sputtering target and rotatable about the axis of the sputtering target so as to sweep a magnetic field around the surface of the sputtering target with a field strength that varies with its position on the sputtering surface as the field sweeps around the sputtering surface, the magnet pack having one or more magnets moveably mounted thereon about an axis of the sputtering target; and a controller programmed and configured to control the magnet pack to change the position of at least one of the one or more magnets relative to the magnet pack as the magnet pack rotates about the axis of the target so that the magnetic field changes with the angular position of the rotating magnet pack to vary the field strength azimuthally as a function of the azimuthal position of the field on the sputtering surface. 11. The apparatus of claim 10 wherein: the controller is further programmed to operate the apparatus sequentially, with a single substrate in the chamber, without opening the chamber, in a plurality of modes including a deposition mode, by sputtering material from a sputtering target into the plasma to ionize the material and depositing the material onto the substrate, and an etch mode, by etching material from the substrate with ions from the plasma, the modes being performed while sweeping the magnetic field around the surface of the sputtering target; and the deposition mode is carried out at pressures greater than 30 mTorr, and the etch mode is carried out at pressures less than 10 mTorr. 12. The apparatus of claim 10 wherein: the magnet pack is configured to produce a magnetic field that confines the plasma to only a portion of the sputtering surface of the target and to sweep the field by moving said portion around the said surface of the target. 13. The apparatus of claim 12 wherein: the controller is configured to move at least one of the one or more magnets of the magnet pack to facilitate either a change of the size of said portion of the said surface or to change the strength of the magnetic field in said portion as a function of the angular position of said portion about the axis of the sputtering target. 14. The apparatus of claim 10 further comprising: at least one actuator configured to move the magnet pack or one or more magnets thereof, in response to the controller, so as to cause the field to sweep around the sputtering surface of the sputtering target. 15. The apparatus of claim 14 wherein: the magnet pack includes a plurality of moveable magnet sectors; and the at least one actuator includes a plurality of actuators, each linked to a different one of the sectors, each responsive to the controller, and each operable to move a sector so as to cause the field to sweep around the sputtering surface of the sputtering target. 16. The apparatus of claim 14 wherein: the permanent magnet pack includes an annular magnet assembly having the one or more magnets extending around the circumference of the magnet pack; and the at least one actuator is linked to a magnet pack and responsive to the controller, and is operable to move the magnet pack in a gyro-motion so as to cause the field to sweep around the sputtering surface of the sputtering target. 17. The apparatus of claim 10 wherein: the magnet pack is configured to produce a magnetic field that concentrates a plasma in a volume over a portion of the surface of the sputtering target and sweeps the volume over the sputtering surface of the sputtering target. 18. The apparatus of claim 10 wherein the magnet pack is configured to vary the magnetic field in a way that improves the uniformity of the plasma. 19. The apparatus of claim 10 wherein the controller is configured to control the magnet pack to vary the magnetic field with its position so as to improve the uniformity of the plasma.