IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
UP-0947835
(2007-11-30)
|
등록번호 |
US-7564139
(2009-07-29)
|
우선권정보 |
JP-2002-377816(2002-12-26) |
발명자
/ 주소 |
- Kuwabara, Hideaki
- Maruyama, Junya
- Ohno, Yumiko
- Takayama, Toru
- Goto, Yuugo
- Arakawa, Etsuko
- Yamazaki, Shunpei
|
출원인 / 주소 |
- Semiconductor Energy Laboratory Co., Ltd.
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
3 인용 특허 :
49 |
초록
▼
It is an object of the present invention to provide a technique for making a semiconductor device thinner without using a back-grinding method for a silicon wafer. According to the present invention, an integrated circuit film is mounted, thereby making a semiconductor device mounting the integrated
It is an object of the present invention to provide a technique for making a semiconductor device thinner without using a back-grinding method for a silicon wafer. According to the present invention, an integrated circuit film is mounted, thereby making a semiconductor device mounting the integrated circuit film thinner. The term "an integrated circuit film" means a film-like integrated circuit which is manufactured based on an integrated circuit manufactured by a semiconductor film formed over a substrate such as a glass substrate or a quartz substrate. In the present invention, the integrated circuit film is manufactured by a technique for transferring.
대표청구항
▼
What is claimed is: 1. A semiconductor device comprising a plurality of integrated circuit films which are bonded to a substrate, wherein the substrate comprises multi-layered wirings, wherein each of the plurality of integrated circuit films is electrically connected to the substrate by a protrudi
What is claimed is: 1. A semiconductor device comprising a plurality of integrated circuit films which are bonded to a substrate, wherein the substrate comprises multi-layered wirings, wherein each of the plurality of integrated circuit films is electrically connected to the substrate by a protruding electrode, wherein the plurality of integrated circuit films are bonded to the substrate by an adhesive, and wherein a film of which thermal conductivity is 10 W/m·K or more is provided in contact with each of the integrated circuit films in a side opposite to the protruding electrode. 2. A semiconductor device according to claim 1, wherein each of the integrated circuit films comprises a semiconductor film, and a thickness of the semiconductor film is from 30 nm to 60 nm. 3. A semiconductor device according to claim 1, wherein each of the integrated circuit films comprises a crystalline semiconductor film. 4. A semiconductor device according to claim 1, wherein the plurality of integrated circuit films include a CPU, a flash memory, an SRAM, a DRAM and a logic, respectively. 5. A semiconductor device according to claim 1, wherein the plurality of integrated circuit films are formed by a transferring technique. 6. A semiconductor device comprising a plurality of integrated circuit films which are bonded to a substrate, wherein the substrate comprises multi-layered wirings, wherein each of the plurality of integrated circuit films is electrically connected to the substrate by a protruding electrode, wherein the plurality of integrated circuit films are bonded to the substrate by an adhesive including a metal particle, wherein the protruding electrode is electrically connected to an electrode formed over the substrate via the metal particle, and wherein a film of which thermal conductivity is 10 W/m·K or more is provided in contact with each of the integrated circuit films in a side opposite to the protruding electrode. 7. A semiconductor device according to claim 6, wherein each of the integrated circuit films comprises a semiconductor film, and a thickness of the semiconductor film is from 30 nm to 60 nm. 8. A semiconductor device according to claim 6, wherein each of the integrated circuit films comprises a crystalline semiconductor film. 9. A semiconductor device according to claim 6, wherein the plurality of integrated circuit films include a CPU, a flash memory, an SRAM, a DRAM and a logic, respectively. 10. A semiconductor device according to claim 6, wherein the plurality of integrated circuit films are formed by a transferring technique. 11. A semiconductor device comprising: a first integrated circuit film, a second integrated circuit film, a third integrated circuit film, fourth integrated circuit film, and a fifth integrated circuit film, over a substrate, wherein the substrate comprises multi-layered wirings, wherein each of the first, second, third, fourth, and fifth integrated circuit films is electrically connected to the substrate by a protruding electrode, wherein each of the first, second, third, fourth, and fifth integrated circuit films is bonded to the substrate by an adhesive, wherein a film of which thermal conductivity is 10 W/m·K or more is provided in contact with each of the first, second, third, fourth, and fifth integrated circuit films in a side opposite to the protruding electrode, and wherein shapes of the first, second, third, fourth, and fifth integrated circuit films differ from each other. 12. A semiconductor device according to claim 11, wherein each of the first, second, third, fourth, and, fifth integrated circuit films comprises a semiconductor film, and a thickness of the semiconductor film is from 30 nm to 60 nm. 13. A semiconductor device according to claim 11, wherein each of the first, second, third, fourth, and fifth integrated circuit films comprises a crystalline semiconductor film. 14. A semiconductor device according to claim 11, wherein the first, second, third, fourth, and fifth integrated circuit films include a CPU, a flash memory, an SRAM, a DRAM and a logic, respectively. 15. A semiconductor device according to claim 11, wherein the first, second, third, fourth, and fifth integrated circuit films are formed by a transferring technique. 16. A semiconductor device comprising: a first integrated circuit film, a second integrated circuit film, a third integrated circuit film, fourth integrated circuit film, and a fifth integrated circuit film, over a substrate, wherein the substrate comprises multi-layered wirings, wherein each of the first, second, third, fourth, and fifth integrated circuit films is electrically connected to the substrate by a protruding electrode, wherein each of the first, second, third, fourth, and fifth integrated circuit films is bonded to the substrate by an adhesive including a metal particle, wherein the protruding electrode is electrically connected to an electrode formed over the substrate via the metal particle, wherein a film of which thermal conductivity is 10 W/m·K or more is provided in contact with each of the first, second, third, fourth, and fifth integrated circuit films in a side opposite to the protruding electrode, and wherein shapes of the first, second, third, fourth, and fifth integrated circuit films differ from each other. 17. A semiconductor device according to claim 16, wherein each of the first, second, third, fourth, and, fifth integrated circuit films comprises a semiconductor film, and a thickness of the semiconductor film is from 30 nm to 60 nm. 18. A semiconductor device according to claim 16, wherein each of the first, second, third, fourth, and fifth integrated circuit films comprises a crystalline semiconductor film. 19. A semiconductor device according to claim 16, wherein the first, second, third, fourth, and fifth integrated circuit films include a CPU, a flash memory, an SRAM, a DRAM and a logic, respectively. 20. A semiconductor device according to claim 16, wherein the first, second, third, fourth, and fifth integrated circuit films are formed by a transferring technique.
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