IPC분류정보
| 국가/구분 |
United States(US) Patent
등록
|
| 국제특허분류(IPC7판) |
|
| 출원번호 |
UP-0581674
(2004-12-14)
|
| 등록번호 |
US-7566640
(2009-08-05)
|
| 우선권정보 |
JP-2003-417317(2003-12-15) |
| 국제출원번호 |
PCT/JP04/018978
(2004-12-14)
|
| §371/§102 date |
20060605
(20060605)
|
| 국제공개번호 |
WO05/057658
(2005-06-23)
|
|
발명자
/ 주소 |
- Yamazaki, Shunpei
- Komori, Miho
- Satou, Yurika
- Hosoki, Kazue
- Ogita, Kaori
|
| 출원인 / 주소 |
- Semiconductor Energy Laboratory Co., Ltd.
|
| 대리인 / 주소 |
|
| 인용정보 |
피인용 횟수 :
25 인용 특허 :
53 |
초록
▼
To provide a thin film integrated circuit which is mass produced at low cost, a method for manufacturing a thin film integrated circuit according to the invention includes the steps of: forming a peel-off layer over a substrate; forming a base film over the peel-off layer; forming a plurality of thi
To provide a thin film integrated circuit which is mass produced at low cost, a method for manufacturing a thin film integrated circuit according to the invention includes the steps of: forming a peel-off layer over a substrate; forming a base film over the peel-off layer; forming a plurality of thin film integrated circuits over the base film; forming a groove at the boundary between the plurality of thin film integrated circuits; and introducing a gas or a liquid containing halogen fluoride into the groove, thereby removing the peel-off layer; thus, the plurality of thin film integrated circuits are separated from each other.
대표청구항
▼
The invention claimed is: 1. A method for manufacturing a thin film integrated circuit device comprising the steps of: forming a peel-off layer over a substrate; forming a base film over the peel-off layer; forming a plurality of thin film integrated circuit devices over the base film; forming a gr
The invention claimed is: 1. A method for manufacturing a thin film integrated circuit device comprising the steps of: forming a peel-off layer over a substrate; forming a base film over the peel-off layer; forming a plurality of thin film integrated circuit devices over the base film; forming a groove at a boundary between the plurality of thin film integrated circuit devices; and introducing a gas or a liquid containing halogen fluoride into the groove, thereby removing the peel-off layer, thereby separating the plurality of thin film integrated circuit devices, wherein the substrate is a glass substrate or a quartz substrate. 2. A method for manufacturing a thin film integrated circuit device comprising the steps of: forming a peel-off layer over a substrate; forming a base film over the peel-off layer; forming a plurality of thin film integrated circuit devices over the base film; forming a groove at a boundary between the plurality of thin film integrated circuit devices; attaching a jig to an upper portion of the plurality of thin film integrated circuit devices; introducing a gas or a liquid containing halogen fluoride into the groove, thereby removing the peel-off layer, thereby separating the plurality of thin film integrated circuit devices; and removing the jig attached to the plurality of thin film integrated circuit devices, wherein the substrate is a glass substrate or a quartz substrate. 3. A method for manufacturing a thin film integrated circuit device comprising the steps of: forming a peel-off layer over a substrate; forming a base film over the peel-off layer; forming a plurality of thin film integrated circuits over the base film; forming an insulating film over the plurality of thin film integrated circuits, thereby forming a plurality of thin film integrated circuit devices; forming a groove at a boundary between the plurality of thin film integrated circuit devices; and introducing a gas or a liquid containing halogen fluoride into the groove, thereby removing the peel-off layer, thereby separating the plurality of thin film integrated circuit devices, wherein the substrate is a glass substrate or a quartz substrate. 4. A method for manufacturing a thin film integrated circuit device comprising the steps of: forming a peel-off layer over a substrate; forming a base film over the peel-off layer; forming a plurality of thin film integrated circuits over the base film; forming an insulating film over the plurality of thin film integrated circuits, thereby forming a plurality of thin film integrated circuit devices; forming a groove at a boundary between the plurality of thin film integrated circuit devices; attaching a jig to an upper portion of the plurality of thin film integrated circuit devices; introducing a gas or a liquid containing halogen fluoride into the groove, thereby removing the peel-off layer, thereby separating the plurality of thin film integrated circuit devices; and removing the jig attached to the plurality of thin film integrated circuit devices, wherein the substrate is a glass substrate or a quartz substrate. 5. A method for manufacturing a thin film integrated circuit device according to claim 2 or claim 4, wherein the jig is attached using an adhesive material whose adhesive force is reduced or lost by UV light irradiation. 6. A method for manufacturing a thin film integrated circuit device according to claim 3 or claim 4, wherein the insulating film contains a material that has a skeletal structure including a bond of silicon and oxygen and includes at least hydrogen as a substituent or at least one selected from the group consisting of fluorine, an alkyl group, and an aromatic hydrocarbon as the substituent. 7. A method for manufacturing a thin film integrated circuit device according to any one of claims 1 through 4, wherein the peel-off layer contains silicon as a main component. 8. A method for manufacturing a thin film integrated circuit device according to any one of claims 1 through 4, wherein the base film contains one selected from silicon oxide, silicon nitride, and silicon oxide containing nitrogen. 9. A method for manufacturing a thin film integrated circuit device according to any one of claims 1 through 4, wherein the groove is formed by dicing or dry etching. 10. A method for manufacturing a thin film integrated circuit device according to any one of claims 1 through 4, wherein the halogen fluoride is ClF3 (chlorine trifluoride). 11. A method for manufacturing a noncontact thin film integrated circuit device comprising the steps of: forming a peel-off layer over a substrate; forming a base film over the peel-off layer; forming a plurality of thin film integrated circuits over the base film; forming an insulating film over the plurality of thin film integrated circuits, thereby forming a plurality of thin film integrated circuit devices; forming a groove at a boundary between the plurality of thin film integrated circuit devices; introducing a gas or a liquid containing halogen fluoride into the groove, thereby removing the peel-off layer, thereby separating the plurality of thin film integrated circuit devices; and forming an antenna on an upper or lower portion of the plurality of thin film integrated circuit devices, wherein the substrate is a glass substrate or a quartz substrate. 12. A method for manufacturing a noncontact thin film integrated circuit device comprising the steps of: forming a peel-off layer over a substrate; forming a base film over the peel-off layer; forming a plurality of thin film integrated circuits over the base film; forming an insulating film over the plurality of thin film integrated circuits, thereby forming a plurality of thin film integrated circuit devices; forming a groove at a boundary between the plurality of thin film integrated circuit devices; attaching a jig to an upper portion of the plurality of thin film integrated circuit devices; introducing a gas or a liquid containing halogen fluoride into the groove, thereby removing the peel-off layer, thereby separating the plurality of thin film integrated circuit devices; removing the jig attached to the plurality of thin film integrated circuit devices; and forming an antenna on an upper or lower portion of the plurality of thin film integrated circuit devices, wherein the substrate is a glass substrate or a quartz substrate. 13. A method for manufacturing a noncontact thin film integrated circuit device comprising the steps of: forming a peel-off layer over a first substrate; forming a base film over the peel-off layer; forming a plurality of thin film integrated circuit devices over the base film; forming a groove at a boundary between the plurality of thin film integrated circuit devices; introducing a gas or a liquid containing halogen fluoride into the groove, thereby removing the peel-off layer, thereby separating the plurality of thin film integrated circuit devices; and enfolding at least one of the thin film integrated circuit devices with a substrate provided with an antenna, wherein the first substrate is a glass substrate or a quartz substrate. 14. A method for manufacturing a noncontact thin film integrated circuit device comprising the steps of: forming a peel-off layer over a first substrate; forming a base film over the peel-off layer; forming a plurality of thin film integrated circuit devices over the base film; forming a groove at a boundary between the plurality of thin film integrated circuit devices; attaching a jig to an upper portion of the plurality of thin film integrated circuit devices; introducing a gas or a liquid containing halogen fluoride into the groove, thereby removing the peel-off layer, thereby separating the plurality of thin film integrated circuit devices; removing the jig attached to the plurality of thin film integrated circuit devices; and enfolding at least one of the thin film integrated circuit devices with a substrate provided with an antenna, wherein the first substrate is a glass substrate or a quartz substrate. 15. A method for manufacturing a noncontact thin film integrated circuit device according to claim 12 or claim 14, wherein the jig is attached using an adhesive material whose adhesive force is reduced or lost by UV light irradiation. 16. A method for manufacturing a noncontact thin film integrated circuit device according to claim 11 or claim 12, wherein the insulating film contains a material that has a skeletal structure including a bond of silicon and oxygen and includes at least hydrogen as a substituent or at least one selected from the group consisting of fluorine, an alkyl group, and an aromatic hydrocarbon as the substituent. 17. A method for manufacturing a noncontact thin film integrated circuit device according to any one of claims 11 through 14, wherein the peel-off layer contains silicon as a main component. 18. A method for manufacturing a noncontact thin film integrated circuit device according to any one of claims 11 through 14, wherein the base film contains one selected from silicon oxide, silicon nitride, and silicon oxide containing nitrogen. 19. A method for manufacturing a noncontact thin film integrated circuit device according to any one of claims 11 through 14, wherein the groove is formed by dicing or dry etching. 20. A method for manufacturing a noncontact thin film integrated circuit device according to any one of claims 11 through 14, wherein the halogen fluoride is ClF3 (chlorine trifluoride).
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