IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
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출원번호 |
UP-0390469
(2006-03-28)
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등록번호 |
US-7567700
(2009-08-05)
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발명자
/ 주소 |
- Funk, Merritt
- Sundararajan, Radha
- Prager, Daniel Joseph
- Natzle, Wesley
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출원인 / 주소 |
- Tokyo Electron Limited
- International Business Machines Corporation
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인용정보 |
피인용 횟수 :
3 인용 특허 :
5 |
초록
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A method of processing a wafer is presented that includes creating a pre-processing measurement map using measured metrology data for the wafer including metrology data for at least one isolated structure on the wafer, metrology data for at least one nested structure on the wafer, or mask data. At l
A method of processing a wafer is presented that includes creating a pre-processing measurement map using measured metrology data for the wafer including metrology data for at least one isolated structure on the wafer, metrology data for at least one nested structure on the wafer, or mask data. At least one pre-processing prediction map is calculated for the wafer. A pre-processing confidence map is calculated for the wafer. The pre-processing confidence map includes a set of confidence data for the plurality of dies on the wafer. A prioritized measurement site is determined when the confidence data for one or more dies is not within the confidence limits. A new measurement recipe that includes the prioritized measurement site is then created.
대표청구항
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What is claimed is: 1. A method of processing a wafer comprising: receiving a wafer, wherein the wafer comprises a plurality of dies, each die having a patterned bi-layer mask thereon, wherein the bi-layer mask includes a soft mask layer and a hard mask layer; creating a pre-processing measurement
What is claimed is: 1. A method of processing a wafer comprising: receiving a wafer, wherein the wafer comprises a plurality of dies, each die having a patterned bi-layer mask thereon, wherein the bi-layer mask includes a soft mask layer and a hard mask layer; creating a pre-processing measurement map using measured metrology data for the wafer including metrology data for at least one isolated bi-layer structure on the wafer, metrology data for at least one nested bi-layer structure on the wafer, or mask data; calculating a first pre-processing prediction map for the wafer based on the pre-processing measurement map, the first pre-processing prediction map including a first set of predicted measured data for the plurality of dies on the wafer; calculating a pre-processing confidence map for the wafer, the pre-processing confidence map including a set of confidence data for the plurality of dies on the wafer, wherein the confidence data is determined using a difference between the first pre-processing prediction map and historical data; determining a prioritized measurement site when the confidence data for one or more dies is not within the confidence limits; creating a new measurement recipe that includes the prioritized measurement site; calculating control settings for the wafer when the confidence data for substantially all of the dies is within the confidence limits; and processing the wafer using the calculated control settings; and determining a first value using a feature size for the at least one isolated structure on the wafer, wherein the soft mask layer comprises photoresist material and the hard mask layer comprises Bottom Anti-Reflective Coating (BARC)layer; determining a second value using a feature size for the at least one nested structure on the wafer; executing an Iso-Greater control strategy when the first value is greater than the second value, wherein the Iso-Greater control strategy comprises an Iso/Nested control plan for controlling an iso/nested etching process, a Trim Control plan for controlling a trimming process, or a BARC open control plan for controlling a BARC etching process, or a combination of two or more thereof; and executing a Nes-Greater control strategy when the first value is less than the second value, wherein the Nes-Greater control strategy comprises an Iso/Nested control plan for controlling an iso/nested deposition process, a Trim Control plan for controlling a trimming process, or a BARC open control plan for controlling a BARC etching process, or a combination of two or more thereof. 2. The method as claimed in claim 1, further comprising: creating a new pre-processing measurement map using new measured metrology data for the wafer, wherein new measurement recipe is used to measure the wafer when creating the new pre-processing measurement map; calculating a new pre-processing prediction map for the wafer, the new pre-processing prediction map including a new set of predicted measured data for the plurality of dies on the wafer; calculating a new confidence map for the wafer, the new confidence map including a new set of confidence data for the plurality of dies on the wafer, wherein the new confidence data is determined using the first pre-processing prediction map, the historical data, or the new pre-processing map, or a combination thereof; establishing an error condition when the new confidence data for one or more dies is not within the confidence limits; and processing the wafer when the new confidence data for substantially all of the dies is within the confidence limits. 3. The method as claimed in claim 1, further comprising: calculating a second pre-processing prediction map for the wafer, the second pre-processing prediction map including a second set of predicted measured data for the plurality of dies on the wafer; and calculating the pre-processing confidence map for the wafer, the pre-processing confidence map including a set of confidence data for the plurality of dies on the wafer, wherein the confidence data is determined using a difference between the first pre-processing prediction map and the second pre-processing prediction map. 4. The method as claimed in claim 3, wherein: the calculating of the first pre-processing prediction map for the wafer uses a first pre-processing equation, the first pre-processing equation being determined using measured data from two or more measurement sites located in a first direction; and the calculating of the second pre-processing prediction map for the wafer uses a second pre-processing equation, the second pre-processing equation being determined using measured data from two or more measurement sites located in a second direction. 5. The method as claimed in claim 3, wherein: the calculating of the first pre-processing prediction map for the wafer uses a first pre-processing surface, the first pre-processing surface being determined using measured data from two or more measurement sites located in a first radial direction; and the calculating of the second pre-processing prediction map for the wafer uses a second pre-processing surface, the second pre-processing surface being determined using measured data from two or more measurement sites located in a second radial direction. 6. The method as claimed in claim 3, wherein the calculating of the pre-processing confidence map for the wafer compares one or more uniformity limits to the first pre-processing prediction map, the second pre-processing prediction map, or a averaged pre-processing prediction map. 7. The method as claimed in claim 3, wherein the determining of the prioritized measurement site establishes the prioritized measurement site in a first area of the wafer when one or more dies in the first area has a value in the first pre-processing prediction map, the second pre-processing prediction map, or an averaged pre-processing prediction map that exceeds one or more uniformity limits. 8. The method as claimed in claim 3, wherein the determining of the prioritized measurement site establishes the prioritized measurement site in a first area of the wafer when one or more dies in the first area has a difference value that exceeds one or more uniformity limits in the first area, wherein the difference value is calculated using a difference between a reference measurement map and the first pre-processing prediction map, the second pre-processing prediction map, or a averaged pre-processing prediction map. 9. The method as claimed in claim 3, wherein the determining of the prioritized measurement site establishes the prioritized measurement site in a first area of the wafer when one or more dies in the first area has a difference value that exceeds one or more uniformity limits in the first area, wherein the difference value is calculated using a difference between a uniformity limit and the first pre-processing prediction map, the second pre-processing prediction map, or a averaged pre-processing prediction map. 10. The method as claimed in claim 1, further comprising: creating a new pre-processing measurement map using new measured metrology data for the wafer, wherein new measurement recipe is used to measure the wafer when creating the new pre-processing measurement map; calculating a new pre-processing prediction map for the wafer, the new pre-processing prediction map including a new set of predicted measured data for the plurality of dies on the wafer; calculating a new confidence map for the wafer, the new confidence map including a new set of confidence data for the plurality of dies on the wafer, wherein the new confidence data is determined using the first pre-processing prediction map, the second pre-processing prediction map, or the new pre-processing map, or a combination thereof; establishing an error condition when the new confidence data for one or more dies is not within the confidence limits; and processing the wafer when the new confidence data for substantially all of the dies is within the confidence limits. 11. The method as claimed in claim 1, further comprising: measuring the processed wafer in a metrology module when post-processing metrology data is required; transferring the processed wafer to a holding area when post-processing metrology data is not required; and receiving a new wafer. 12. The method as claimed in claim 11, further comprising: measuring the processed wafer in a metrology module; creating a post-processing measurement map using measured metrology data for the processed wafer including metrology data for at least one processed isolated structure on the wafer and metrology data for at least one processed nested structure on the wafer; calculating a first post-processing prediction map for the processed wafer, the first post-processing prediction map including a first set of predicted measured data for the plurality of dies on the processed wafer; calculating a post-processing confidence map for the processed wafer, the post-processing confidence map including a set of confidence data for the plurality of dies on the processed wafer, wherein the confidence data is determined using a difference between the first post-processing prediction map and the historical data; determining a post-processing prioritized measurement site when the confidence data for one or more dies is not within the confidence limits; and creating a new measurement recipe that includes the prioritized measurement site. 13. The method as claimed in claim 11, further comprising: measuring the processed wafer in a metrology module; creating a post-processing measurement map using measured metrology data for the processed wafer including metrology data for at least one processed isolated structure on the wafer and metrology data for at least one processed nested structure on the wafer; calculating a first post-processing prediction map for the processed wafer, the first post-processing prediction map including a first set of predicted measured data for the plurality of dies on the processed wafer; calculating a second post-processing prediction map for the processed wafer, the second post-processing prediction map including a second set of predicted measured data for the plurality of dies on the processed wafer; calculating a post-processing confidence map for the processed wafer, the post-processing confidence map including a set of confidence data for the plurality of dies on the processed wafer, wherein the confidence data is determined using a difference between the first post-processing prediction map and the second post-processing prediction map; determining a post-processing prioritized measurement site when the confidence data for one or more dies is not within the confidence limits; and creating a new measurement recipe that includes the prioritized measurement site. 14. The method as claimed in claim 13, wherein: the calculating of the first post-processing prediction map for the wafer uses a first post-processing equation, the first post-processing equation being determined using measured data from two or more measurement sites located in a first direction; and the calculating of the second pre-processing prediction map for the wafer uses a second post-processing equation, the second post-processing equation being determined using measured data from two or more measurement sites located in a second direction. 15. The method as claimed in claim 13, wherein: the calculating of the first post-processing prediction map for the wafer uses a first post-processing surface, the first post-processing surface being determined using measured data from two or more measurement sites located in a first radial direction; and the calculating of the second post-processing prediction map for the wafer uses a second post-processing surface, the second post-processing surface being determined using measured data from two or more measurement sites located in a second radial direction. 16. The method as claimed in claim 13, wherein the calculating of the post-processing confidence map for the wafer uses a difference between a reference measurement map and the first post-processing prediction map, the second post-processing prediction map, or a averaged post-processing prediction map. 17. The method as claimed in claim 13, wherein the calculating of the post-processing confidence map for the wafer uses a difference between the first post-processing prediction map and the second post-processing prediction map. 18. The method as claimed in claim 13, wherein the calculating of the post-processing confidence map for the wafer compares one or more uniformity limits to the first post-processing prediction map, the second post-processing prediction map, or a averaged post-processing prediction map. 19. The method as claimed in claim 13, wherein establishing the prioritized measurement site in a first area of the wafer when one or more dies in the first are has a value in the first post-processing prediction map, the second post-processing prediction map, or an averaged post-processing prediction map that exceeds one or more uniformity limits. 20. The method as claimed in claim 13, wherein the determining of the post-processing prioritized measurement site establishes the prioritized measurement site in a first area of the wafer when one or more dies in the first area has a difference value that exceeds one or more uniformity limits in the first area, wherein the difference value is calculated using a difference between a reference measurement map and the first post-processing prediction map, the second post-processing prediction map, or a averaged post-processing prediction map. 21. The method as claimed in claim 13, wherein the determining of the post-processing prioritized measurement site establishes the prioritized measurement site in a first area of the wafer when one or more dies in the first are has a difference value that exceeds one or more uniformity limits in the first area, wherein the difference value is calculated using a difference between a uniformity limit and the first post-processing prediction map, the second post-processing prediction map, or a averaged post-processing prediction map. 22. The method as claimed in claim 11, further comprising: re-measuring the processed wafer in the metrology module using the new measurement recipe when the new measurement recipe is created while the processed wafer is in the metrology module; creating a new post-processing measurement map, wherein new measurement recipe is used to measure the processed wafer when creating the new post-processing measurement map; calculating a new post-processing prediction map for the processed wafer, the new post-processing prediction map including a new set of predicted measured data for the plurality of dies on the processed wafer; calculating a new confidence map for the processed wafer, the new confidence map including a new set of confidence data for the plurality of dies on the processed wafer, wherein the new confidence data is determined using the first post-processing prediction map, the second post-processing prediction map, or the new post-processing map, or a combination thereof; establishing an error condition when the new confidence data for one or more dies is not within the confidence limits; and removing the processed wafer from the metrology module when the new confidence data for substantially all of the dies is within the confidence limits. 23. The method as claimed in claim 1, wherein the calculating of the pre-processing confidence map for the wafer uses a difference between a reference measurement map and the first pre-processing prediction map, a historical pre-processing prediction map, or a averaged pre-processing prediction map. 24. The method as claimed in claim 1, wherein the calculating of the pre-processing confidence map for the wafer uses a difference between the first pre-processing prediction map and a historical pre-processing prediction map.
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