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A thin film transistor includes a substrate, and a pair of source/drain electrodes (i.e., a source electrode and a drain electrode) formed on the substrate and defining a gap therebetween. A pair of low resistance conductive thin films are provided such that each coats at least a part of one of the

A thin film transistor includes a substrate, and a pair of source/drain electrodes (i.e., a source electrode and a drain electrode) formed on the substrate and defining a gap therebetween. A pair of low resistance conductive thin films are provided such that each coats at least a part of one of the source/drain electrodes. The low resistance conductive thin films define a gap therebetween. An oxide semiconductor thin film layer is continuously formed on upper surfaces of the pair of low resistance conductive thin films and extends along the gap defined between the low resistance conductive thin films so as to function as a channel. Side surfaces of the oxide semiconductor thin film layer and corresponding side surfaces of the low resistance conductive thin films coincide with each other in a channel width direction of the channel.

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What is claimed is: 1. A thin film transistor comprising: a substrate; a pair of source/drain electrodes formed on the substrate and defining a gap therebetween; a pair of low resistance conductive thin films, each coating at least a part of one of the source/drain electrodes, the low resistance co

What is claimed is: 1. A thin film transistor comprising: a substrate; a pair of source/drain electrodes formed on the substrate and defining a gap therebetween; a pair of low resistance conductive thin films, each coating at least a part of one of the source/drain electrodes, the low resistance conductive thin films defining a gap therebetween; and an oxide semiconductor thin film layer, which is continuously formed on upper surfaces of the pair of low resistance conductive thin films, and which extends along the gap defined between the low resistance conductive thin films so as to function as a channel; wherein a pair of side surfaces of the oxide semiconductor thin film layer and a corresponding pair of side surfaces of the low resistance conductive thin films coincide with each other in a channel width direction of the channel, and a pair of outer ends of the oxide semiconductor thin film layer and a corresponding pair of outer ends of the low resistance conductive thin films coincide with each other along a channel length direction of the panel. 2. The thin film transistor according to claim 1, wherein a length of the oxide semiconductor thin film layer in the channel width direction is equal to or larger than a length of the source/drain electrodes in the channel width direction. 3. The thin film transistor according to claim 1, wherein the oxide semiconductor thin film layer primarily comprises zinc oxide. 4. The thin film transistor according to claim 3, wherein the low resistance conductive thin films are made of intrinsic zinc oxide, and the zinc oxide forming the low resistance conductive thin films has a crystal grain size that is larger than a crystal grain size of the zinc oxide forming the oxide semiconductor thin film layer. 5. The thin film transistor according to claim 1, wherein the source/drain electrodes are made of metal. 6. The thin film transistor according to claim 1, wherein each of the low resistance conductive thin films primarily comprises any one selected from a group consisting of indium tin oxide (ITO), zinc oxide doped with gallium (Ga), and zinc oxide doped with aluminum (Al) 7. The thin film transistor according to claim 1, further comprising: a gate insulating film disposed over the oxide semiconductor thin film layer, the gate insulating film having a dual-layer structure comprising a lamination of a first gate insulating film that covers only an upper surface of the oxide semiconductor thin film layer and a second gate insulating film that covers an upper surface and side surfaces of the first gate insulating film and side surfaces of the oxide semiconductor thin film layer; and a gate electrode disposed over the gate insulating film. 8. The thin film transistor according to claim 1, further comprising: a gate electrode disposed below the oxide semiconductor thin film layer; and an overcoat insulating film disposed over the oxide semiconductor thin film layer, the overcoat insulating film having a dual-layer structure comprising a lamination of a first overcoat insulating film that covers only an upper surface of the oxide semiconductor thin film layer and a second overcoat insulating film that covers an upper surface and side surfaces of the first overcoat insulating film and side surfaces of the oxide semiconductor thin film layer. 9. The thin film transistor according to claim 1, further comprising a gate insulating film and a gate electrode provided on the oxide semiconductor thin film layer, the gate insulating film being formed of a compound containing silicon and oxygen. 10. The thin film transistor according to claim 1, further comprising an overcoat insulating film provided on the oxide semiconductor thin film layer, the overcoat insulating film being formed of a compound containing silicon and oxygen. 11. A thin film transistor comprising: an oxide semiconductor thin film layer having a pair of side surfaces and a pair of outer ends; a pair of low resistance conductive thin films defining a gap therebetween along an area corresponding to a channel of the thin film transistor, each of the low resistance conductive thin films having a pair of side surfaces and an outer end, each of the side surfaces being positioned so as to coincide with a corresponding one of the side surfaces of the oxide semiconductor thin film layer, and the outer end being positioned so as to coincide with a corresponding one of the outer ends of the oxide semiconductor thin film layer; and a pair of source/drain electrodes, each having a pair of side surfaces, each of the side surfaces being one of positioned so as to coincide with and positioned inside of a corresponding one of the side surfaces of the low resistance conductive thin films. 12. The thin film transistor according to claim 11, further comprising a gate insulating film and a gate electrode provided on the oxide semiconductor thin film layer, the gate insulating film being formed of a compound containing silicon and oxygen. 13. The thin film transistor according to claim 11, further comprising an overcoat insulating film provided on the oxide semiconductor thin film layer, the overcoat insulating film being formed of a compound containing silicon and oxygen. 14. A thin film transistor comprising: a substrate; a pair of source/drain electrodes formed on the substrate and defining a gap therebetween; a pair of low resistance conductive thin films made of intrinsic zinc oxide, each coating at least a part of one of the source/drain electrodes, the low resistance conductive thin films defining a gap therebetween; and an oxide semiconductor thin film layer primarily comprising zinc oxide, which is continuously formed on upper surfaces of the pair of low resistance conductive thin films, and which extends along the gap defined between the low resistance conductive thin films so as to function as a channel; wherein side surfaces of the oxide semiconductor thin film layer and corresponding side surfaces of the low resistance conductive thin films coincide with each other in a channel width direction of the channel; and wherein the zinc oxide forming the oxide semiconductor thin film layer has a crystal grain size that is smaller than a crystal grain size of the zinc oxide forming the low resistance conductive thin films. 15. A thin film transistor comprising: an oxide semiconductor thin film layer primarily comprising zinc oxide having a pair of side surfaces; a pair of low resistance conductive thin films defining a gap therebetween along an area corresponding to a channel of the thin film transistor, each of the low resistance conductive thin films having a pair of side surfaces, each of the side surfaces being positioned so as to coincide with a corresponding one of the side surfaces of the oxide semiconductor thin film layer, each of the low resistance conductive thin films being made of intrinsic zinc oxide, and the zinc oxide forming the low resistance conductive thin films having a crystal grain size that is larger than a crystal grain size of the zinc oxide forming the oxide semiconductor thin film layer; and a pair of source/drain electrodes, each having a pair of side surfaces, each of the side surfaces being positioned so as to coincide with, and positioned inside of, a corresponding one of the side surfaces of the low resistance conductive thin films.