초록 ▼

A method that combines alternate low/medium ion dose implantation with rapid thermal annealing at relatively low temperatures. At least one dopant is implanted in one of a single crystal and an epitaxial film of the wide band gap compound by a plurality of implantation cycles. The number of implant

A method that combines alternate low/medium ion dose implantation with rapid thermal annealing at relatively low temperatures. At least one dopant is implanted in one of a single crystal and an epitaxial film of the wide band gap compound by a plurality of implantation cycles. The number of implantation cycles is sufficient to implant a predetermined concentration of the dopant in one of the single crystal and the epitaxial film. Each of the implantation cycles includes the steps of: implanting a portion of the predetermined concentration of the one dopant in one of the single crystal and the epitaxial film; annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time to repair damage to one of the single crystal and the epitaxial film caused by implantation and activates the implanted dopant; and cooling the annealed single crystal and implanted portion to a temperature of less than about 100° C. This combination produces high concentrations of dopants, while minimizing the defect concentration.

대표청구항 ▼

The invention claimed is: 1. A method of implanting a predetermined concentration of at least one impurity in a wide band gap compound, comprising: a) providing a single crystal of the wide band gap compound; b) providing at least one impurity; c) implanting the predetermined concentration of the a

The invention claimed is: 1. A method of implanting a predetermined concentration of at least one impurity in a wide band gap compound, comprising: a) providing a single crystal of the wide band gap compound; b) providing at least one impurity; c) implanting the predetermined concentration of the at least one impurity in the single crystal of the wide band gap compound by a plurality of implantation cycles, wherein a number of implantation cycles is sufficient to implant the predetermined concentration of the at least one impurity in the single crystal of the wide band gap compound, and wherein each of the implantation cycles comprises: i) implanting a portion of the predetermined concentration of the at least one impurity in the single crystal; and ii) annealing the single crystal and implanted portion at a predetermined temperature for a predetermined time, wherein annealing repairs damage to the single crystal caused by implanting and activates the implanted impurity; and iii) cooling the annealed single crystal and implanted portion at a predetermined cooling rate to a temperature of less than about 100° C. 2. The method according to claim 1, wherein the predetermined time for annealing is less than about 60 seconds. 3. The method according to claim 1, wherein the wide band gap compound is a compound selected from the group consisting of III-V compounds, II-VI compounds, silicon carbide, and combinations thereof. 4. The method according to claim 3, wherein the wide band gap compound is a group III nitride. 5. The method according to claim 4, wherein the group III nitride is gallium nitride. 6. The method according to claim 3, wherein the wide band gap compound is a group II oxide. 7. The method according to claim 6, wherein the group II oxide is zinc oxide. 8. The method according to claim 1, wherein the at least one dopant comprises at least one p-type dopant. 9. The method according to claim 8, wherein the at least one p-type dopant comprises at least one alkali earth metal. 10. The method according to claim 9, wherein the at least one alkali earth metal comprises at least one of magnesium and beryllium. 11. The method according to claim 1, wherein the at least one dopant comprises at least one n-type dopant. 12. The method according to claim 11, wherein the at least one n-type dopant comprises an ion of one of silicon and a rare earth element. 13. The method according to claim 12, wherein the rare earth element is one of erbium, europium, praseodymium, and thulium. 14. The method according to claim 1, wherein the step of implanting a portion of the predetermined concentration of the at least one dopant in one of the single crystal and the epitaxial film comprises implanting the portion by ion implantation. 15. The method according to claim 1, wherein the predetermined concentration is in a range from about 1×1013 cm-2 to about 1×1017 cm-2. 16. The method according to claim 15, wherein the portion implanted in each cycle is between about 10% and about 50% of the predetermined concentration. 17. The method according to claim 1, wherein one of the single crystal and the epitaxial film has an initial defect concentration prior to implantation, and wherein the portion implanted in each cycle is sufficient to maintain a defect concentration within one of the single crystal and the epitaxial film substantially equal to the initial defect concentration. 18. The method according to claim 1, wherein the step of annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time comprises annealing one of the single crystal and the epitaxial film and implanted portion at a temperature of up to about 1100° C. for a predetermined time. 19. The method according to claim 18, wherein the predetermined temperature is in a range from about 700° C. to about 1100° C. 20. The method according to claim 1, wherein the step of annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time comprises annealing one of the single crystal and the epitaxial film and implanted portion at the predetermined temperature for a time sufficient to maintain a defect concentration within one of the single crystal and the epitaxial film below a predetermined defect concentration. 21. The method according to claim 1, wherein the predetermined temperature is a temperature sufficient to maintain a defect concentration within one of the single crystal and the epitaxial film below a predetermined defect concentration. 22. The method according to claim 1, wherein the step of annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time comprises vacuum annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time. 23. The method according to claim 1, wherein the step of annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time comprises annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time in a controlled atmosphere. 24. The method according to claim 23, wherein the controlled atmosphere is a nitrogen atmosphere at ambient pressure. 25. The method according to claim 1, wherein the step of annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time comprises heating one of the single crystal or epitaxial film by one of laser heating, resistive heating, and electron beam heating. 26. A method of repairing damage to a one of a single crystal and an epitaxial film of a wide band gap material due to implantation of dopants within one of the single crystal and the epitaxial film, comprising: a) providing one of the single crystal and the epitaxial film, wherein a plurality of dopants has been implanted within one of the single crystal and the epitaxial film, and wherein the implantation of the dopants has generated a plurality of defects and damage within one of the single crystal and the epitaxial film; and b) exposing one of the single crystal and the epitaxial film to a plurality of annealing cycles, wherein each of the annealing cycles comprises: i) annealing one of the single crystal and the epitaxial film at a predetermined temperature for a predetermined time, wherein the annealing removes at least a portion of the plurality of defects and repairs damage to one of the single crystal and the epitaxial film caused by implanting; and ii) cooling the annealed single crystal and implanted portion at a predetermined cooling rate to a temperature of less than about 100° C. 27. The method according to claim 26, wherein the step of annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time comprises annealing one of the single crystal and the epitaxial film and implanted portion up to about 1100° C. for a predetermined time. 28. The method according to claim 26, wherein the predetermined temperature is in a range from about 700° C. to about 1100° C. 29. The method according to claim 26, wherein the step of annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time comprises annealing one of the single crystal and the epitaxial film and implanted portion at the predetermined temperature for a time sufficient to maintain a defect concentration within one of the single crystal and the epitaxial film below a predetermined defect concentration. 30. The method according to claim 26, wherein the predetermined temperature is a temperature sufficient to maintain a defect concentration within one of the single crystal and the epitaxial film below a predetermined defect concentration. 31. The method according to claim 26, wherein the step of annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time comprises vacuum annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time. 32. The method according to claim 26, wherein the step of annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time comprises annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time in a controlled atmosphere. 33. The method according to claim 32, wherein the controlled atmosphere is a nitrogen atmosphere at ambient pressure. 34. The method according to claim 26, wherein the step of annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time comprises heating one of the single crystal or epitaxial film by one of laser heating, resistive heating, and electron beam heating. 35. A method of implanting a predetermined concentration of at least one dopant in a wide band gap compound, comprising: a) providing one of a single crystal and an epitaxial film of the wide band gap compound; b) providing at least one dopant; c) implanting the predetermined concentration of the at least one dopant in one of the single crystal and the epitaxial film of the wide band gap compound by a plurality of implantation cycles, wherein a number of implantation cycles is sufficient to implant the predetermined concentration of the at least one dopant in one of the single crystal and the epitaxial film of the wide band gap compound, and wherein each of the implantation cycles comprises: i) implanting a portion of the predetermined concentration of the at least one dopant in one of the single crystal and the epitaxial film; and ii) annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for less than about 60 seconds, wherein the annealing repairs damage to one of the single crystal and the epitaxial film caused by implanting and activates the implanted dopant; and iii) cooling the annealed single crystal and implanted portion at a predetermined cooling rate to a temperature of less than about 100° C.