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Method and apparatus for producing single-wall carbon nanotubes 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • D01F-009/12
출원번호 UP-0434181 (2003-05-09)
등록번호 US-7591989 (2009-10-20)
우선권정보 CA-2385802(2002-05-09)
발명자 / 주소
  • Smiljanic, Olivier
  • Stansfield, Barry L.
출원인 / 주소
  • Institut National de la Recherche Scientifique
대리인 / 주소
    Bereskin & Parr LLP/S E.N.C.H.L., s.r.l.
인용정보 피인용 횟수 : 5  인용 특허 : 101

초록

The invention relates to a method for producing single-wall carbon nanotubes. The method of the invention comprises the steps of (a) providing a plasma torch having a plasma tube with a plasma-discharging end; (b) feeding an inert gas through the plasma tube to form a primary plasma; (c) contacting

대표청구항

What is claimed is: 1. A method for producing single-wall carbon nanotubes comprising: feeding an inert gas through a plasma torch to form an inert gas plasma; injecting a carbon-containing substance and a metal catalyst in said inert gas plasma, downstream of said inert gas feed, in order to form

이 특허에 인용된 특허 (101)

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이 특허를 인용한 특허 (5)

  1. Jeong, Chung-Heon; Jeon, Jong-Kwan; Jang, Suk-Won, Apparatus for synthesizing carbon nanotubes.
  2. Harutyunyan, Avetik; Rao, Rahul; Chou, Nam Hawn, Method for continuous and controllable production of single walled carbon nanotubes.
  3. Wang, Xue-Shen; Li, Qun-Qing; Fan, Shou-Shan, Method for forming recess defect on carbon nanotube.
  4. Chou, Nam Hawn, Method for production of indium nanoparticles.
  5. Harutyunyan, Avetik; Chou, Nam Hawn, Method for synthesis of ruthenium nanoparticles with face-centered cubic and hexagonal close-packed structures.
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