초록 ▼

The present invention relates to a process for the production of porous inorganic materials or a matrix material containing nanoparticles with high uniformity of thickness and/or high effective surface area and to the materials obtainable by this process. By the abovementioned process materials with

The present invention relates to a process for the production of porous inorganic materials or a matrix material containing nanoparticles with high uniformity of thickness and/or high effective surface area and to the materials obtainable by this process. By the abovementioned process materials with a defined thickness in the region of ±10%, preferably ±5%, of the average thickness are available.

대표청구항 ▼

The invention claimed is: 1. A process for the production of porous materials, comprising the steps: a) vapor-deposition of a separating agent onto a carrier to produce a separating agent layer, b) the simultaneous vapor-deposition of a material selected from a metal, a metal oxide and a non-metal

The invention claimed is: 1. A process for the production of porous materials, comprising the steps: a) vapor-deposition of a separating agent onto a carrier to produce a separating agent layer, b) the simultaneous vapor-deposition of a material selected from a metal, a metal oxide and a non-metal oxide and a separating agent onto the separating agent layer (a), c) the separation of the material from the separating agent. 2. The process according to claim 1, wherein the material selected from a metal, a metal oxide and a non-metal oxide is porous SiOz, wherein 0.70≦z≦2.0. 3. The process according to claim 2, wherein in step b) a SiOy/separating agent layer is vapor-deposited from two different vaporisers, wherein the first vaporiser contains a charge comprising either a mixture of Si and SiO2, SiOy or a mixture thereof, wherein 0.70≦y≦1.8, and the second vaporiser contains a charge comprising the separating agent. 4. The process according to claim 3, wherein the process comprises a further step d), wherein the SiOy is converted to SiOz with 1.40≦z≦2.0 by heating in an oxygen-containing atmosphere, or to SiOy+a, containing (1-(y/y+a)) silicon, wherein 0.70≦y≦1.8, 0.05≦a≦1.30, and the sum of y and a is smaller or equal to 2, by heating SiOy in an oxygen-free atmosphere. 5. The process according to claim 1, wherein the separating agent is an inorganic salt soluble in water and vaporisable in vacuo or an organic substance soluble in organic solvents or water and vaporisable in vacuo. 6. A process according to claim 3, wherein the porous SiOz comprises pores and the process comprises the further step of filling the pores of the porous SiOz with nanoparticles of TiO2 of rutile or anatase type, or loaded with tin-donated indium oxide, SnO2, Sb2O3/SnO2, In2O3 or In2O3/SnO2. 7. A porous SiOz flake, wherein 0.70≦z≦2.0, obtained by the process according to claim 6, wherein the pores of the porous SiOz which has a BET specific surface area of greater than 500 m2/g are filled with nanoparticles of TiO2 of rutile or anatase type, or loaded with tin-donated indium oxide, SnO2, Sb2O3/SnO2, In2O3 or In2O3/SnO2. 8. A process according to claim 1, wherein between two mixed layers of material and separating agent further layers of metal, or metal oxide are deposited and/or in case of unsymmetrical layer structure of the pigment further layers of metal, or metal oxide are deposited before the mixed layer of material and separating agent. 9. The process according to claim 6, wherein the process also comprises step d), wherein the SiOy is converted to SiOz with 1.40≦z≦2.0 by heating in an oxygen-containing atmosphere, or to SiOy+a, containing (1-(y/y+a)) silicon, wherein 0.70≦y≦1.8, 0.05≦a≦1.30, and the sum of y and a is smaller or equal to 2, by heating SiOy in an oxygen-free atmosphere. 10. The process according to claim 1, wherein in step b) a metal and optionally SiOy is vapor-deposited and a SiOy/separating agent layer is vapor-deposited from two different vaporisers, wherein the first vaporiser contains a charge comprising either a mixture of Si and SiO2, SiOy, or a mixture thereof, wherein 0.70≦y≦1,8, and the second vaporiser contains a charge comprising the separating agent. 11. The process according to claim 10, wherein the process comprises a further step d), wherein the SiOy is converted to SiOz with 1.40≦z≦2.0 by heating in an oxygen-containing atmosphere, or to SiOy+a, containing (1-(y/y+a)) silicon, wherein 0.70≦y≦1.8, 0.05≦a≦1.30, and the sum of y and a is smaller or equal to 2, by heating SiOy in an oxygen-free atmosphere. 12. The process according to claim 10, wherein the metal is aluminum. 13. The process according to claim 1, wherein step b) comprises vapor-deposition of a mixed layer of SiOy and separating agent onto the separating agent layer, vapor-deposition of an SiOy layer onto the mixed layer, wherein 0.70≦y≦1.80, d) optionally vapor-deposition of a mixed layer of SiOy and separating agent onto the SiOy layer. 14. A process according to claim 13, wherein the process comprises the further step of applying to the porous SiOz particles, porous SiOz/SiOz particles, or porous SiOz/SiOz/porous SiOz particles, a metal oxide of high index of refraction selected from TiO2, ZrO2, Fe2O3, Fe3O4, Cr2O3, or ZnO, or a layer comprising SiC, or a layer of carbon, especially diamond-like carbon, or a semitransparent metal layer, or an opaque metal layer.