Method of making light emitting device having a molded encapsulant
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-033/00
H01L-021/00
B32B-009/04
출원번호
UP-0551323
(2006-10-20)
등록번호
US-7595515
(2009-10-12)
발명자
/ 주소
Thompson, D. Scott
Leatherdale, Catherine A.
Boardman, Larry D.
Ouderkirk, Andrew J.
Kecman, Fedja
출원인 / 주소
3M Innovative Properties Company
대리인 / 주소
Gallo, Elizabeth A.
인용정보
피인용 횟수 :
6인용 특허 :
61
초록▼
Disclosed herein is a method of making a light emitting device comprising an LED and a molded silicon-containing encapsulant. The method includes contacting the LED with a photopolymerizable composition containing a silicon-containing resin having silicon-bonded hydrogen and aliphatic unsaturation a
Disclosed herein is a method of making a light emitting device comprising an LED and a molded silicon-containing encapsulant. The method includes contacting the LED with a photopolymerizable composition containing a silicon-containing resin having silicon-bonded hydrogen and aliphatic unsaturation and two metal-containing catalysts. One catalyst may be activated by actinic radiation, and the second by heat but not the actinic radiation. Polymerization of the photopolymerizable composition to form the encapsulant may be carried out by selectively activating the different catalysts. At some point before polymerization is complete, a mold is used to impart a predetermined shape to the encapsulant.
대표청구항▼
What is claimed is: 1. A light emitting device comprising: a light emitting diode; a photopolymerizable composition comprising: a silicon-containing resin comprising silicon-bonded hydrogen and aliphatic unsaturation, and a first metal-containing catalyst that may be activated by actinic radiation,
What is claimed is: 1. A light emitting device comprising: a light emitting diode; a photopolymerizable composition comprising: a silicon-containing resin comprising silicon-bonded hydrogen and aliphatic unsaturation, and a first metal-containing catalyst that may be activated by actinic radiation, and a second metal-containing catalyst that may be activated by heat but not the actinic radiation; and a mold. 2. The light emitting device of claim 1, wherein the photopolymerizable composition is at least partially polymerized. 3. A light emitting device comprising: a light emitting diode; an at least partially polymerized composition in contact with the light emitting diode and formed from a photopolymerizable composition comprising: a silicon-containing resin comprising silicon-bonded hydrogen and aliphatic unsaturation, a first metal-containing catalyst that may be activated by actinic radiation, and a second metal-containing catalyst that may be activated by heat but not the actinic radiation; and wherein a surface of the at least partially polymerized composition is shaped as a positive or negative lens on a substantial portion thereof. 4. A light emitting device comprising: a light emitting diode; an at least partially polymerized composition in contact with the light emitting diode and formed from a photopolymerizable composition comprising: a silicon-containing resin comprising silicon-bonded hydrogen and aliphatic unsaturation, a first metal-containing catalyst that may be activated by actinic radiation, and a second metal-containing catalyst that may be activated by heat but not the actinic radiation; and wherein a surface of the at least partially polymerized composition is shaped with macrostructures, each macrostructure having a dimension of from 10 um to 1 mm. 5. A light emitting device comprising: a light emitting diode; an at least partially polymerized composition in contact with the light emitting diode and formed from a photopolymerizable composition comprising: a silicon-containing resin comprising silicon-bonded hydrogen and aliphatic unsaturation, a first metal-containing catalyst that may be activated by actinic radiation, and a second metal-containing catalyst that may be activated by heat but not the actinic radiation; and wherein a surface of the at least partially polymerized composition is shaped with microstructures, each microstructure having a dimension of from 100 nm to less than 10 um. 6. A method of making a light emitting device, the method comprising: providing a light emitting diode; contacting the light emitting diode with a photopolymerizable composition comprising: a silicon-containing resin comprising silicon-bonded hydrogen and aliphatic unsaturation, a first metal-containing catalyst that may be activated by actinic radiation, and a second metal-containing catalyst that may be activated by heat but not the actinic radiation; and contacting the photopolymerizable composition with a mold. 7. The method of claim 6, further comprising: applying actinic radiation to the photopolymerizable composition after contacting it with the mold, wherein the actinic radiation is at a wavelength of 700 nm or less and initiates hydrosilylation within the silicon-containing resin, the hydrosilylation comprising reaction between the silicon-bonded hydrogen and the aliphatic unsaturation. 8. The method of claim 6, further comprising: heating the photopolymerizable composition to a temperature of less than about 150° C. after contacting it with the mold, wherein heating initiates hydrosilylation within the silicon-containing resin, the hydrosilylation comprising reaction between the silicon-bonded hydrogen and the aliphatic unsaturation. 9. The method of claim 6, further comprising: applying actinic radiation to the photopolymerizable composition after contacting it with the mold, wherein the actinic radiation is at a wavelength of 700 nm or less and initiates hydrosilylation within the silicon-containing resin, thereby forming a partially polymerized composition, the hydrosilylation comprising reaction between the silicon-bonded hydrogen and the aliphatic unsaturation; and heating the partially polymerized composition to a temperature of less than about 150° C. to further initiate hydrosilylation. 10. A method of making a light emitting device, the method comprising: providing a light emitting diode; contacting the light emitting diode with a photopolymerizable composition comprising: a silicon-containing resin comprising silicon-bonded hydrogen and aliphatic unsaturation, a first metal-containing catalyst that may be activated by actinic radiation, and a second metal-containing catalyst that may be activated by heat but not the actinic radiation; and applying actinic radiation to the photopolymerizable composition, wherein the actinic radiation is at a wavelength of 700 nm or less and initiates hydrosilylation within the silicon-containing resin, thereby forming a partially polymerized composition, the hydrosilylation comprising reaction between the silicon-bonded hydrogen and the aliphatic unsaturation; and contacting the partially polymerized composition with a mold. 11. The method of claim 10, further comprising: applying actinic radiation to the partially polymerized composition after contacting it with the mold, wherein the actinic radiation applied to the partially polymerized composition is at a wavelength of 700 nm or less and further initiates hydrosilylation within the silicon-containing resin. 12. The method of claim 10, further comprising: heating the partially polymerized composition to a temperature of less than about 150° C. after contacting it with the mold, wherein heating further initiates hydrosilylation within the silicon-containing resin. 13. A method of making a light emitting device, the method comprising: providing a light emitting diode; contacting the light emitting diode with a photopolymerizable composition comprising: a silicon-containing resin comprising silicon-bonded hydrogen and aliphatic unsaturation, a first metal-containing catalyst that may be activated by actinic radiation, and a second metal-containing catalyst that may be activated by heat but not the actinic radiation; and heating the photopolymerizable composition to a temperature of less than about 150° C. to initiate hydrosilylation within the silicon-containing resin, thereby forming a partially polymerized composition, the hydrosilylation comprising reaction between the silicon-bonded hydrogen and the aliphatic unsaturation; and contacting the partially polymerized composition with a mold. 14. The method of claim 13, further comprising: applying actinic radiation to the partially polymerized composition, wherein the actinic radiation is at a wavelength of 700 nm or less and further initiates hydrosilylation within the silicon-containing resin. 15. The method of claim 13, further comprising: heating the partially polymerized composition to a temperature of less than about 150° C. to further initiate hydrosilylation within the silicon-containing resin. 16. The method as in any one of claims 6, 10 and 13, wherein the mold is transparent to the actinic radiation. 17. The method as in any one of claims 7, 9, 10, 11 and 14, wherein applying actinic radiation comprises activating the light emitting diode. 18. The method of claim 6, the mold comprising a mold material and being shaped to impart a positive or negative lens on a substantial portion of the surface of the photopolymerizable composition. 19. The method of claim 6, the mold comprising a mold material and being shaped to impart macrostructures, each macrostructure having a dimension of from 10 um to 1 mm. 20. The method of claim 6, the mold comprising a mold material and being shaped to impart microstructures, each microstructure having a dimension of from 100 nm to less than 10 um. 21. A method of making a light emitting device, the method comprising: providing a light emitting diode; contacting the light emitting diode with a photopolymerizable composition comprising: a silicon-containing resin comprising silicon-bonded hydrogen and aliphatic unsaturation, a first metal-containing catalyst that may be activated by actinic radiation, and a second metal-containing catalyst that may be activated by heat but not the actinic radiation; shaping a surface of the photopolymerizable composition by contacting it with a mold; applying actinic radiation to the photopolymerizable composition to form an at least partially polymerized composition, wherein the actinic radiation is at a wavelength of 700 nm or less and initiates hydrosilylation within the silicon-containing resin, the hydrosilylation comprising reaction between the silicon-bonded hydrogen and the aliphatic unsaturation; separating the mold from the at least partially polymerized composition. 22. A light emitting device prepared according to the method of claim 21. 23. A method of making a light emitting device, the method comprising: providing a light emitting diode; contacting the light emitting diode with a photopolymerizable composition comprising: a silicon-containing resin comprising silicon-bonded hydrogen and aliphatic unsaturation, a first metal-containing catalyst that may be activated by actinic radiation, and a second metal-containing catalyst that may be activated by heat but not the actinic radiation; shaping a surface of the photopolymerizable composition by contacting it with a mold; heating the photopolymerizable composition to a temperature of less than about 150° C. to form an at least partially polymerized composition, wherein heating initiates hydrosilylation within the silicon-containing resin, the hydrosilylation comprising reaction between the silicon-bonded hydrogen and the aliphatic unsaturation; separating the mold from the at least partially polymerized composition. 24. A light emitting device prepared according to the method of claim 23. 25. A method of making a light emitting device, the method comprising: providing a light emitting diode; contacting the light emitting diode with a photopolymerizable composition comprising: a silicon-containing resin comprising silicon-bonded hydrogen and aliphatic unsaturation, a first metal-containing catalyst that may be activated by actinic radiation, and a second metal-containing catalyst that may be activated by heat but not the actinic radiation; applying actinic radiation to the photopolymerizable composition to form an at least partially polymerized composition, wherein the actinic radiation is at a wavelength of 700 nm or less and initiates hydrosilylation within the silicon-containing resin, the hydrosilylation comprising reaction between the silicon-bonded hydrogen and the aliphatic unsaturation; shaping a surface of the at least partially polymerized composition by contacting it with a mold; further initiating hydrosilylation within the silicon-containing resin of the partially polymerized composition by: applying actinic radiation is at a wavelength of 700 nm or less, or heating to a temperature of less than about 150° C.; and separating the mold from the polymerized composition. 26. A light emitting device prepared according to the method of claim 25. 27. A method of making a light emitting device, the method comprising: providing a light emitting diode; contacting the light emitting diode with a photopolymerizable composition comprising: a silicon-containing resin comprising silicon-bonded hydrogen and aliphatic unsaturation, a first metal-containing catalyst that may be activated by actinic radiation, and a second metal-containing catalyst that may be activated by heat but not the actinic radiation; heating the photopolymerizable composition to a temperature of less than about 150° C. to initiate hydrosilylation within the silicon-containing resin, thereby forming a partially polymerized composition, the hydrosilylation comprising reaction between the silicon-bonded hydrogen and the aliphatic unsaturation; shaping a surface of the at least partially polymerized composition by contacting it with a mold; further initiating hydrosilylation within the silicon-containing resin of the partially polymerized composition by: applying actinic radiation is at a wavelength of 700 nm or less, or heating to a temperature of less than about 150° C.; and separating the mold from the polymerized composition. 28. A light emitting device prepared according to the method of claim 27.
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