초록 ▼

An ion implantation device with a dual pumping mode and method thereof for use in producing atomic or molecular ion beams are disclosed. In one particular exemplary embodiment, an ion implantation apparatus is provided for controlling a pressure within an ion beam source housing corresponding to an

An ion implantation device with a dual pumping mode and method thereof for use in producing atomic or molecular ion beams are disclosed. In one particular exemplary embodiment, an ion implantation apparatus is provided for controlling a pressure within an ion beam source housing corresponding to an ion beam species being produced. The ion implantation apparatus may include the ion beam source housing comprising a plurality of species for use in ion beam production. A pumping section may also be included for evacuating gas from the ion beam source housing. A controller may further be included for controlling the pumping section according to pumping parameters corresponding to a species of the plurality of species being used for ion beam production.

대표청구항 ▼

The invention claimed is: 1. An ion implantation apparatus for controlling a pressure within an ion beam source housing corresponding to an ion beam species being produced, comprising: an ion beam source housing comprising a plurality of species for use in ion beam production; a pumping section for

The invention claimed is: 1. An ion implantation apparatus for controlling a pressure within an ion beam source housing corresponding to an ion beam species being produced, comprising: an ion beam source housing comprising a plurality of species for use in ion beam production; a pumping section for evacuating gas from the ion beam source housing; and a controller for controlling the pumping section according to pumping parameters corresponding to a species of the plurality of species being used for ion beam production. 2. The ion implantation apparatus of claim 1, wherein the ion implantation apparatus further comprises: a pressure measurement unit for generating an electrical pressure signal corresponding to a pressure within the ion beam source housing, wherein the controller adjusts the operation of the pumping section based upon the electrical pressure signal. 3. The ion implantation apparatus of claim 2, wherein the pressure measurement unit measures a total pressure in the ion beam source housing. 4. The ion implantation apparatus of claim 2, wherein the pressure measurement unit measures a partial pressure of one or more gas constituents in the ion beam source housing. 5. The ion implantation apparatus of claim 1, wherein the ion implantation apparatus further comprises: a beam current measurement unit for generating an electrical beam current signal corresponding to a beam current of the ion beam being produced, wherein the controller adjusts the operation of the pumping section based upon the electrical beam current signal. 6. The ion implantation apparatus of claim 1, wherein the plurality of species comprises at least a molecular and an atomic species. 7. The ion implantation apparatus of claim 1, wherein upon receiving a signal indicating the switching of the species used for ion beam production to another species, the controller controls the pumping section according to pumping parameters corresponding to the another species. 8. The ion implantation apparatus of claim 1, wherein the controller controls the pumping section by adjusting any number of a rate of pumping, an addition of ballast gas, and a variable valve. 9. A method for controlling a pressure within an ion beam source housing corresponding to an ion beam species being produced, comprising: producing an ion beam using one of a plurality of species within an ion beam source housing; evacuating gas from the ion beam source housing a pumping section; and controlling the pumping section according to pumping parameters corresponding to the species of the plurality of species being used for ion beam production. 10. The method of claim 9, further comprising: generating an electrical pressure signal, by a pressure measurement unit, corresponding to a pressure within the ion beam source housing, wherein the controller adjusts the operation of the pumping section based upon the electrical pressure signal. 11. The method of claim 10, wherein the pressure measurement unit measures a total pressure in the ion beam source housing. 12. The method of claim 10, wherein the pressure measurement unit measures a partial pressure of one or more gas constituents in the ion beam source housing. 13. The method of claim 9, wherein the ion implantation apparatus further comprises: generating an electrical beam current signal, by a beam current measurement unit, corresponding to a beam current of the ion beam being produced, wherein the controller adjusts the operation of the pumping section based upon the electrical beam current signal. 14. The method of claim 9, wherein the plurality of species comprises at least a molecular and an atomic species. 15. The method of claim 9, wherein upon receiving a signal indicating the switching of the species used for ion beam production to another species, the controller controls the pumping section according to pumping parameters corresponding to the another species. 16. The method of claim 9, wherein the controller controls the pumping section by adjusting any number of a rate of pumping, an addition of ballast gas, and a variable valve. 17. At least one processor readable carrier for storing a computer program of instructions configured to be readable by at least one processor for instructing the at least one processor to execute a computer process for performing the method as recited in claim 9.