Pressure sensors and methods of making the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-029/84
H01L-029/66
출원번호
UP-0210309
(2005-08-24)
등록번호
US-7622782
(2009-12-02)
발명자
/ 주소
Chu, Stanley
Gamage, Sisira Kankanam
Kwon, Hyon Jin
출원인 / 주소
General Electric Company
대리인 / 주소
Cantor Colburn LLP
인용정보
피인용 횟수 :
46인용 특허 :
17
초록▼
A pressure sensor includes a base substrate silicon fusion bonded to a cap substrate with a chamber disposed between the base substrate and the cap substrate. Each of the base substrate and the cap substrate include silicon. The base substrate includes walls defining a cavity and a diaphragm portion
A pressure sensor includes a base substrate silicon fusion bonded to a cap substrate with a chamber disposed between the base substrate and the cap substrate. Each of the base substrate and the cap substrate include silicon. The base substrate includes walls defining a cavity and a diaphragm portion positioned over the cavity, wherein the cavity is open to an environment to be sensed. The chamber is hermetically sealed from the environment.
대표청구항▼
What is claimed is: 1. A pressure sensor comprising: a base substrate comprising first and second support portions, facing surfaces of the first and second support portions comprising walls defining a first cavity, the base substrate further comprising a diaphragm portion extending between top port
What is claimed is: 1. A pressure sensor comprising: a base substrate comprising first and second support portions, facing surfaces of the first and second support portions comprising walls defining a first cavity, the base substrate further comprising a diaphragm portion extending between top portions of the first and second support portions, wherein the base substrate comprises silicon and wherein the first cavity is open to an environment to be sensed; at least one bottom dielectric layer disposed on an underside of each support portion of the base substrate that do not extend past edges of the undersides of the support portions; a cap substrate comprising silicon; a silicon fusion bond between the cap substrate and the base substrate; a chamber disposed between the base substrate and the cap substrate, wherein the chamber is hermetically sealed from the environment by the silicon fusion bond; a piezo-resistive element disposed in physical communication with the diaphragm portion between the chamber and the first cavity; and a conductive pathway implanted between the base substrate and the at least one top dielectric layer, the conductive pathway connected to and extending from the piezo-resistive element to a portion of the base substrate beyond an outer edge of the cap substrate. 2. The pressure sensor of claim 1, wherein the cap substrate comprises a thickness up to about 400 micrometers. 3. The pressure sensor of claim 1, wherein the chamber is defined by a cap cavity in the cap substrate. 4. The pressure sensor of claim 1, wherein the chamber is defined by a base cavity in the base substrate, wherein the diaphragm portion is disposed between the first cavity and the base cavity. 5. The pressure sensor of claim 1, wherein the chamber is defined by a cap cavity in the cap substrate and a base cavity in the base substrate, wherein the diaphragm portion is disposed between the first cavity and the base cavity. 6. The pressure sensor of claim 1, wherein each of the base substrate and the cap substrate are not silicon-on-insulator wafers. 7. The pressure sensor of claim 1, wherein the base substrate is an n-type substrate, and the piezo-resistive element comprises a p-type dopant material. 8. The pressure sensor of claim 1, further comprising an electrode connected to the conductive pathway, wherein the electrode is in electrical communication with the piezo-resistive element via the conductive pathway, wherein the base substrate is an n-type substrate, wherein each of the conductive pathway and the piezo-resistive element comprise a p-type dopant material. 9. The pressure sensor of claim 1, further comprising an oxide layer covering at least a portion of the diaphragm portion that is in physical communication with the piezo-resistive element, and a nitride layer disposed over the oxide layer. 10. The pressure sensor of claim 1, wherein the conductive pathway sandwiched between the cap substrate and the base substrate, the conductive pathway is shielded from the environment; and the piezo-resistive element is in electrical communication with the conductive pathway. 11. The pressure sensor of claim 2, wherein the thickness is about 50 micrometers to about 150 micrometers. 12. A pressure sensor comprising: a base substrate comprising first and second support portions, a first pair of facing surfaces of the first and second support portions comprising walls defining a lower cavity, a second pair of facing surfaces of the first and second support portions comprising walls defining an upper cavity, the base substrate further comprising a diaphragm portion extending between the first and second support portions and disposed between the lower and upper cavities, wherein upper portions of the first and second support portions define a support surface, wherein the base substrate comprises silicon, and wherein the lower cavity is open to an environment to be sensed; a cap substrate comprising silicon, wherein the cap substrate comprises a planar bottom surface that defines a support surface of the cap substrate and an upper surface of the upper cavity, wherein the support surface of the cap substrate is disposed over the support surface of the upper portions of the first and second support portions, wherein the cap substrate is silicon fusion bonded to the base substrate such that the upper cavity forms a chamber between the base substrate and the cap substrate, wherein the chamber is hermetically sealed from the environment; and a piezo-resistive element disposed in physical communication with the diaphragm portion. 13. The pressure sensor of claim 12, wherein the cap substrate comprises a thickness up to about 400 micrometers. 14. The pressure sensor of claim 12, wherein the thickness is about 50 micrometers to about 150 micrometers. 15. The pressure sensor of claim 12, wherein the chamber is defined by a base cavity in the base substrate, wherein the diaphragm portion is disposed between the cavity and the base cavity. 16. The pressure sensor of claim 12, wherein the base substrate is an n-type substrate, and the piezo-resistive element comprises a p-type dopant material. 17. The pressure sensor of claim 12, further comprising an electrode and a conductive pathway, wherein the electrode is in electrical communication with the piezo-resistive element via the conductive pathway, wherein the base substrate is an n-type substrate, and wherein each of the conductive pathway and the piezo-resistive element comprise a p-type dopant material. 18. The pressure sensor of claim 12, further comprising an oxide layer covering at least a portion of the diaphragm portion that is in physical communication with the piezo-resistive element, and a nitride layer disposed over the oxide layer. 19. The pressure sensor of claim 12, further comprising a conductive pathway sandwiched between the cap substrate and the base substrate, wherein the conductive pathway is shielded from the environment; and the piezo-resistive element is in electrical communication with the conductive pathway.
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이 특허에 인용된 특허 (17)
Nelson, Daniel S.; Hillman, David J.; McIntire, John, Absolute pressure sensor.
Paolo Ferrari IT; Benedetto Vigna IT; Flavio Villa IT, Manufacturing method and integrated microstructures of semiconductor material and integrated piezoresistive pressure sensor having a diaphragm of polycrystalline semiconductor material.
Ju Byeong K. (Seoul KRX) Oh Myung H. (Seoul KRX) Kang Kwang N. (Seoul KRX), Method and apparatus for silicon fusion bonding of silicon substrates using wet oxygen atmosphere.
Knecht Thomas A. (Eden Prairie MN) Ruf James (Maple Grove MN) Schulte John P. (Eden Prairie MN), Pressure transducer with stress isolation for hard mounting.
Sooriakumar K. (Scottsdale AZ) Monk David J. (Mesa AZ) Chan Wendy K. (Scottsdale AZ) Goldman Kenneth G. (Chandler AZ), Vertically integrated sensor structure and method.
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