[미국특허]
Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-029/12
H01L-029/02
H01L-021/338
H01L-021/02
출원번호
UP-0103127
(2005-04-11)
등록번호
US-7626217
(2009-12-16)
발명자
/ 주소
Saxler, Adam William
출원인 / 주소
Cree, Inc.
대리인 / 주소
Myers Bigel Sibley & Sajovec
인용정보
피인용 횟수 :
7인용 특허 :
67
초록▼
Group III-Nitride semiconductor device structures and methods of fabricating Group III-Nitride structures are provided that include an electrically conductive Group III-Nitride substrate, such as a GaN substrate, and a semi-insulating or insulating Group III-Nitride epitaxial layer, such as a GaN ep
Group III-Nitride semiconductor device structures and methods of fabricating Group III-Nitride structures are provided that include an electrically conductive Group III-Nitride substrate, such as a GaN substrate, and a semi-insulating or insulating Group III-Nitride epitaxial layer, such as a GaN epitaxial layer, on the electrically conductive Group III-Nitride substrate. The Group III-Nitride epitaxial layer has a lattice constant that is and a composition that may be substantially the same as a composition and a lattice constant of the Group III-Nitride substrate.
대표청구항▼
That which is claimed is: 1. A Group III-Nitride High Electron Mobility Transistor (HEMT), comprising: an electrically conductive Group III-Nitride substrate; a semi-insulating or insulating Group III-Nitride epitaxial layer on the electrically conductive Group III-Nitride substrate, the Group III-
That which is claimed is: 1. A Group III-Nitride High Electron Mobility Transistor (HEMT), comprising: an electrically conductive Group III-Nitride substrate; a semi-insulating or insulating Group III-Nitride epitaxial layer on the electrically conductive Group III-Nitride substrate, the Group III-Nitride epitaxial layer having a lattice constant that is substantially the same as a lattice constant of the Group III-Nitride substrate, wherein the Group III-Nitride epitaxial layer has an isolation voltage of at least about 50V; and a HEMT device structure on the semi-insulating or insulating GROUP III-Nitride epitaxial layer. 2. The HEMT of claim 1, wherein the electrically conductive Group III-Nitride substrate and the semi-insulating or insulating Group III-Nitride epitaxial layer have substantially the same composition. 3. The HEMT of claim 2, wherein the Group III-Nitride epitaxial layer has a thickness of at least about 5 μm. 4. The HEMT of claim 2, wherein the Group III-Nitride epitaxial layer has a thickness of at least about 10 μm. 5. The HEMT of claim 2, wherein the Group III-Nitride epitaxial layer is directly on the Group III-Nitride substrate. 6. The HEMT of claim 2, wherein the Group III-Nitride epitaxial layer has a resistivity of at least 105 Ω-cm. 7. The HEMT of claim 2, wherein the Group III-Nitride epitaxial layer has an isolation voltage of at least about 100V. 8. The HEMT of claim 2, wherein the Group III-Nitride epitaxial layer is doped with a deep level transition metal dopant. 9. The HEMT of claim 8, wherein the Group III-Nitride epitaxial layer is doped with Fe, Co, Mn, Cr, V and/or Ni. 10. The HEMT of claim 2, wherein the concentration of the deep level transition metal dopant is at least about 1×1016 cm-3. 11. A GaN High Electron Mobility Transistor (HEMT), comprising: an electrically conductive GaN substrate; an insulating or semi-insulating GaN based epitaxial layer on the GaN substrate, the GaN based epitaxial layer having a composition and lattice constant that are substantially the same as a composition and lattice constant of the GaN substrate, wherein the GaN based epitaxial layer has an isolation voltage of at least about 50V; and a HEMT device structure on the insulating or semi-insulating GaN based epitaxial layer. 12. The HEMT of claim 11, wherein the GaN based epitaxial layer has a thickness of at least about 5 μm. 13. The HEMT of claim 11, wherein the GaN based epitaxial layer has a thickness of at about least 10 μm. 14. The HEMT of claim 11, wherein the GaN based epitaxial layer is directly on the GaN substrate. 15. The HEMT of claim 11, wherein the GaN based epitaxial layer has a resistivity of at least 105 Ω-cm. 16. The HEMT of claim 11, wherein the GaN based epitaxial layer has an isolation voltage of at least about 100V. 17. The HEMT of claim 11, wherein the GaN based epitaxial layer is doped with a deep level transition metal dopant. 18. The HEMT of claim 17, wherein the GaN based epitaxial layer is doped with Fe, Co, Mn, Cr, V and/or Ni. 19. The HEMT of claim 17, wherein the concentration of the deep level transition metal dopant is at least about 1×1016 cm-3. 20. A method of fabricating a Group III-Nitride High Electron Mobility Transistor (HEMT), comprising: epitaxially forming a semi-insulating or insulating Group III-Nitride epitaxial layer on an electrically conductive Group III-Nitride substrate, the Group III-Nitride epitaxial layer having a lattice constant that is substantially the same as a lattice constant of the Group III-Nitride substrate, wherein the GaN based epitaxial layer has an isolation voltage from at least about 50V to at least about 100V; and forming a HEMT device structure on the semi-insulating or insulating Group III-Nitride epitaxial layer. 21. The method of claim 20, wherein the electrically conductive Group III-Nitride substrate and the semi-insulating or insulating Group III-Nitride epitaxial layer have substantially the same composition. 22. The method of claim 21, wherein the Group III-Nitride epitaxial layer has a thickness of at least about 5 μm. 23. The method of claim 21, wherein the Group III-Nitride epitaxial layer has a thickness of at least about 10 μm. 24. The method of claim 21, wherein the Group III-Nitride epitaxial layer is directly on the Group III-Nitride substrate. 25. The method of claim 21, wherein the Group III-Nitride epitaxial layer has a resistivity of at least 105 Ω-cm. 26. The method of claim 21, wherein the Group III-Nitride epitaxial layer has an isolation voltage of at least about 50V. 27. The method of claim 21, wherein the Group III-Nitride epitaxial layer has an isolation voltage of at least about 100V. 28. The method of claim 21, wherein the Group III-Nitride epitaxial layer is doped with a deep level transition metal dopant. 29. The method of claim 28, wherein the Group III-Nitride epitaxial layer is doped with Fe, Co, Mn, Cr, V and/or Ni. 30. The method of claim 28, wherein the concentration of the deep level transition metal dopant is at least about 1×1016 cm-3. 31. A method of fabricating a GaN High Electron Mobility Transistor (HEMT), comprising: epitaxially forming an insulating or semi-insulating GaN based epitaxial layer on an electrically conductive GaN substrate, the GaN based epitaxial layer having a composition and lattice constant that are substantially the same as a composition and lattice constant of the GaN substrate, wherein the GaN based epitaxial layer has an isolation voltage from at least about 50V to at least about 100V; and forming a HEMT device structure on the insulating or semi-insulating GaN based epitaxial layer. 32. The method of claim 31, wherein the GaN based epitaxial layer has a thickness of at least about 5 μm. 33. The method of claim 31, wherein the GaN based epitaxial layer has a thickness of at least about 10 μm. 34. The method of claim 31, wherein the GaN based epitaxial layer is directly on the GaN substrate. 35. The method of claim 31, wherein the GaN based epitaxial layer has a resistivity of at least 105 Ω-cm. 36. The method of claim 31, wherein the GaN based epitaxial layer has an isolation voltage of at least about 50V. 37. The method of claim 31, wherein the GaN based epitaxial layer has an isolation voltage of at least about 100V. 38. The method of claim 31, further comprising a Group III-Nitride high electron mobility transistor on the GaN based epitaxial layer. 39. The method of claim 31, wherein the GaN based epitaxial layer is doped with a deep level transition metal dopant. 40. The method of claim 39, wherein the GaN based epitaxial layer is doped with Fe, Co, Mn, Cr, V and/or Ni. 41. The method of claim 39, wherein the concentration of the deep level transition metal dopant is at least about 1×1016 cm-3.
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