A low-emissivity multilayer coating includes, in order outward from the substrate, a first layer including a layer containing titanium oxide, a layer containing silicon nitride, or a sublayer layer containing titanium oxide in combination with a sublayer containing silicon nitride; a second layer in
A low-emissivity multilayer coating includes, in order outward from the substrate, a first layer including a layer containing titanium oxide, a layer containing silicon nitride, or a sublayer layer containing titanium oxide in combination with a sublayer containing silicon nitride; a second layer including Ag; a third layer including at least one layer selected from titanium oxide layers and silicon nitride layers; a fourth layer including Ag; and a fifth layer including silicon nitride. The color of the coatings can be varied over a wide range by controlling the thicknesses of the layers of titanium oxide, silicon nitride and Ag. A diffusion barrier of oxidized metal protects relatively thin, high electrical conductivity, pinhole free Ag films grown preferentially on zinc oxide substrates. Oxygen and/or nitrogen in the Ag films improves the thermal and mechanical stability of the Ag. Dividing the first layer of titanium oxide, the Ag layers, and/or the third layer with a sublayer of oxidized metal can provide greater thermal and mechanical stability to the respective layers.
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What is claimed is: 1. A low-emissivity coating on a substrate, the coating comprising, in numerical order outward from the substrate, a first layer including at least one layer selected from titanium oxide layers and silicon nitride layers; a second layer including Ag; a third layer including at l
What is claimed is: 1. A low-emissivity coating on a substrate, the coating comprising, in numerical order outward from the substrate, a first layer including at least one layer selected from titanium oxide layers and silicon nitride layers; a second layer including Ag; a third layer including at least one layer selected from titanium oxide layers and silicon nitride layers; a fourth layer including Ag; and a fifth layer including silicon nitride, wherein at least one of the second layer and the fourth layer comprises a sublayer including Ag, and a sublayer consisting of a fully oxidized Ni--Cr alloy directly on, and outward from the substrate from, the Ag of the sublayer including Ag. 2. The coating according to claim 1, wherein the first layer is from 5 to 30 nm thick. 3. The coating according to claim 1, wherein the first layer includes a titanium oxide layer; and the titanium oxide in the first layer is amorphous. 4. The coating according to claim 1, wherein the third layer comprises at least one of a TiO2 layer and a Si3N4 layer. 5. The coating according to claim 1, wherein the third layer comprises a superlattice of titanium oxide and silicon nitride. 6. The coating according to claim 1, wherein at least one of the second layer and the fourth layer consists of, in numerical order outward from the substrate, a first sublayer, which includes a zinc oxide; a second sublayer, which includes Ag; and a third sublayer, which includes a fully oxidized Ni--Cr alloy. 7. The coating according to claim 6, wherein the zinc oxide comprises nitrogen. 8. The coating according to claim 1, wherein the Ag in at least one of the second layer and the fourth layer further comprises at least one of oxygen and nitrogen. 9. The coating according to claim 1, wherein the Ag in at least one of the second layer and the fourth layer further comprises a means for strengthening the Ag against thermally induced changes. 10. The coating according to claim 1, wherein at least one of the first layer, the second layer, the third layer, and the fourth layer is divided by a layer of an oxidized metal. 11. The coating according to claim 10, wherein the oxidized metal is an at least partially oxidized Ni--Cr alloy. 12. The coating according to claim 1, wherein at least one layer of the first layer, the second layer, the third layer, and the fourth layer is divided by a layer including a means for strengthening the at least one layer against thermally induced changes. 13. The coating according to claim 1, wherein the silicon nitride comprises less than a stoichiometric amount of nitrogen. 14. The coating according to claim 1, wherein the first layer includes a layer of SiNx, where 0<x≦1.34; the third layer includes a layer of SiNx, where 0<x≦1.34; and the fifth layer includes a layer of SiNx, where 0<x≦1.34. 15. The coating according to claim 14, wherein the first layer includes a layer of SiNx, where x=1.34. 16. A method of making a low-emissivity coating on a substrate, the method comprising depositing at least one layer including Ag on the substrate; and producing the coating of claim 1. 17. The method according to claim 16, wherein the depositing comprises sputtering. 18. A method of making a low-emissivity coating on a substrate, the method comprising a step for depositing at least one layer including Ag on the substrate; and producing the coating of claim 1. 19. A low-emissivity coating on a substrate, the coating comprising, in numerical order outward from the substrate, a first layer including at least one layer selected from titanium oxide layers and silicon nitride layers; a second layer including a first means for reflecting infrared radiation; a third layer having an index of refraction greater than or equal to 1.9 at a wavelength of 550 nm; a fourth layer including a second means for reflecting infrared radiation; and a fifth layer including a means for protecting the coating from abrasion, wherein at least one of the first means for reflecting infrared radiation and the second means for reflecting infrared radiation comprises a sublayer including Ag, and a sublayer consisting of a fully oxidized Ni--Cr alloy directly on, and outward from the substrate from, the Ag of the sublayer including Ag. 20. The coating according to claim 19, wherein at least one of the first means for reflecting infrared radiation and the second means for reflecting infrared radiation consists of, in numerical order outward from the substrate, a first sublayer, a second sublayer, which includes Ag, and a third sublayer, which includes a fully oxidized Ni--Cr alloy; and the first sublayer includes a means for preferentially orienting a crystal structure of the second sublayer. 21. The coating according to claim 19, wherein at least one of the first means for reflecting infrared radiation and the second means for reflecting infrared radiation consists of, in numerical order outward from the substrate, a first sublayer, a second sublayer including Ag, and a third sublayer; the first sublayer includes a zinc oxide; and the third sublayer includes a means for preventing the Ag in the second sublayer from corroding. 22. The coating according to claim 21, wherein the zinc oxide comprises nitrogen. 23. A low-emissivity coating on a transparent substrate, the coating comprising, in numerical order outward from the substrate, a first layer including at least one layer selected from titanium oxide layers and silicon nitride layers; a second layer including a zinc oxide; a third layer including Ag; a fourth layer consisting of a first fully oxidized Ni--Cr alloy directly on the Ag of the third layer; a fifth layer including at least one layer selected from titanium oxide layers and silicon nitride layers; a sixth layer including a zinc oxide; a seventh layer including Ag; an eighth layer consisting of a second fully oxidized Ni--Cr alloy directly on the Ag of the seventh layer; and a ninth layer including silicon nitride. 24. The coating according to claim 22, wherein the first layer includes a layer of SiNx, where 0<x≦1.34; the fifth layer includes a layer of SiNx, where 0<x≦1.34; and the ninth layer includes a layer of SiNx, where 0<x≦1.34. 25. The coating according to claim 24, wherein the first layer includes a layer of SiNx, where x=1.34.
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