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A method of bonding a semiconductor substrate to a metal substrate is disclosed. In some embodiments the method includes forming a semiconductor device in a semiconductor substrate, the semiconductor device comprising a first surface. The method further includes obtaining a metal substrate. The meta

A method of bonding a semiconductor substrate to a metal substrate is disclosed. In some embodiments the method includes forming a semiconductor device in a semiconductor substrate, the semiconductor device comprising a first surface. The method further includes obtaining a metal substrate. The metal substrate is bonded to the first surface of the semiconductor device, wherein at least a portion of the metal substrate forms an electrical terminal for the semiconductor device.

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What is claimed is: 1. A method of bonding a semiconductor substrate to a metal substrate comprising: forming a semiconductor device in a semiconductor substrate, the semiconductor device comprising a first surface; obtaining a metal substrate, wherein the metal substrate is thermally matched to th

What is claimed is: 1. A method of bonding a semiconductor substrate to a metal substrate comprising: forming a semiconductor device in a semiconductor substrate, the semiconductor device comprising a first surface; obtaining a metal substrate, wherein the metal substrate is thermally matched to the semiconductor substrate; forming an interlayer on the metal substrate, wherein the interlayer comprises an amorphous silicon film or a polysilicon film; bonding the metal substrate and the interlayer to the first surface of the semiconductor device after forming the interlayer on the metal substrate, wherein at least a portion of the metal substrate forms an electrical terminal for the semiconductor device and further wherein at least a portion of the metal substrate serves as a mechanical support for the semiconductor substrate; and dicing the semiconductor substrate and the metal substrate to form individual semiconductor chips. 2. The method of claim 1 further comprising removably adhering the semiconductor substrate with the semiconductor device to a carrier, before bonding the semiconductor substrate to the metal substrate. 3. The method of claim 2 further comprising thinning the semiconductor substrate while it is adhered to the carrier, before bonding the semiconductor substrate to the metal substrate. 4. The method of claim 3 wherein the semiconductor device is a power MOSFET and the electrical terminal is a drain. 5. The method of claim 2 further comprising removing the carrier from the semiconductor substrate, after bonding the semiconductor substrate to the metal substrate. 6. The method of claim 5 wherein the semiconductor device is a power MOSFET and the electrical terminal is a drain. 7. The method of claim 2 wherein the semiconductor device is a power MOSFET and the electrical terminal is a drain. 8. The method of claim 1 wherein the semiconductor device is a power MOSFET and the electrical terminal is a drain. 9. The method of claim 1 wherein bonding the semiconductor substrate to the metal substrate and the interlayer comprises bonding the interlayer formed over the metal substrate to the semiconductor substrate. 10. The method of claim 9 wherein the semiconductor device is a power MOSFET and the electrical terminal is a drain. 11. The method of claim 1 further comprising forming a silicide over the interlayer, before bonding the semiconductor substrate to the metal substrate and the interlayer. 12. The method of claim 1 wherein the metal substrate has a CTE of less than about 5×10-6° C.-1 at about 200° C. 13. The method of claim 1 wherein the semiconductor device has a thickness of about 100 m or less. 14. The method of claim 1 further comprising forming a metal contact over a second surface of the semiconductor substrate, after bonding the semiconductor substrate to the metal substrate at the first surface of the semiconductor substrate. 15. The method of claim 1 wherein the metal substrate comprises at least one metal selected from the group consisting of Mo, W, Cr and an alloy thereof. 16. The method of claim 1 wherein the metal substrate has a thickness of about 200 m. 17. The method of claim 1 wherein the metal substrate comprises a metal wafer. 18. The method of claim 1 wherein bonding the semiconductor substrate to the metal substrate occurs at less than 300° C. 19. The method of claim 1 wherein the interlayer comprises a polysilicon film. 20. A method of bonding a semiconductor substrate to a metal substrate comprising: forming a semiconductor device in a semiconductor substrate, the semiconductor device comprising a first surface; obtaining a metal substrate; forming an interlayer on the metal substrate, wherein the interlayer comprises an amorphous silicon film or a polysilicon film; bonding the metal substrate to the first surface of the semiconductor device, wherein at least a portion of the metal substrate forms an electrical terminal for the semiconductor device and further wherein at least a portion of the metal substrate serves as a mechanical support for the semiconductor substrate, wherein bonding the semiconductor substrate to the metal substrate occurs at a low temperature; and dicing the semiconductor substrate and the metal substrate to form individual semiconductor chips. 21. A method of bonding a semiconductor wafer to a metal wafer comprising: obtaining a semiconductor wafer comprising a first surface; obtaining a metal wafer, wherein the metal wafer is thermally matched to the semiconductor wafer; forming an interlayer on the metal wafer, wherein the interlayer comprises an amorphous silicon film or a polysilicon film; bonding the metal wafer and the interlayer to the first surface of the semiconductor wafer after forming the interlayer on the metal wafer, wherein an edge of the metal wafer is flush with an edge of the semiconductor wafer after bonding, and further wherein at least a portion of the metal wafer serves as a mechanical support for the semiconductor wafer; and dicing the semiconductor wafer and the metal wafer to form individual semiconductor chips, wherein portions of the metal wafer form electrical terminals for at least some of the individual semiconductor chips. 22. The method of claim 21 further comprising removably adhering the semiconductor wafer to a glass carrier, before bonding the semiconductor wafer to the metal wafer and the interlayer.