IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
UP-0770681
(2007-06-28)
|
등록번호 |
US-7648904
(2010-02-22)
|
우선권정보 |
KR-10-2006-0096346(2006-09-29) |
발명자
/ 주소 |
- Choi, Young-Soo
- Kim, Gyu-Hyun
|
출원인 / 주소 |
|
대리인 / 주소 |
Townsend and Townsend and Crew LLP
|
인용정보 |
피인용 횟수 :
0 인용 특허 :
21 |
초록
▼
A metal line in a semiconductor device includes an insulation layer having trenches formed therein, a barrier metal layer formed over the insulation layer and the trenches, a metal layer formed over the barrier metal layer, wherein the metal layer fills the trenches, and an anti-galvanic corrosion l
A metal line in a semiconductor device includes an insulation layer having trenches formed therein, a barrier metal layer formed over the insulation layer and the trenches, a metal layer formed over the barrier metal layer, wherein the metal layer fills the trenches, and an anti-galvanic corrosion layer formed on an interface between the metal layer and the barrier metal layer.
대표청구항
▼
What is claimed is: 1. A method for forming a metal line in a semiconductor device, the method comprising: providing a substrate including an insulation layer having a plurality of trenches formed therein; forming a barrier metal layer over the insulation layer and the trenches; forming a first met
What is claimed is: 1. A method for forming a metal line in a semiconductor device, the method comprising: providing a substrate including an insulation layer having a plurality of trenches formed therein; forming a barrier metal layer over the insulation layer and the trenches; forming a first metal layer over the barrier metal layer; forming a second metal layer over the first metal layer, wherein the second metal layer fills the trenches; and forming an anti-galvanic corrosion layer on an interface between the barrier metal layer and the second metal layer using a thermal process. 2. The method of claim 1, wherein the anti-galvanic corrosion layer comprises an alloy layer including combined materials of the first and second metal layers. 3. The method of claim 1, wherein the first metal layer comprises a first metal and the second metal layer comprises a second metal, the first metal and the second metal having opposite polarities. 4. The method of claim 1, wherein the first metal layer comprises copper (Cu) and the second metal layer comprises aluminum (Al). 5. The method of claim 1, wherein the barrier metal layer comprises a stack structure comprising a material selected from a group consisting of titanium (Ti)/titanium nitride (TiN), Ti/TiN/Ti, tantalum (Ta)/tantalum nitride (TaN), Ta/TaN/Ta, Ti/titanium silicon nitride (TiSiN), and Ti/TiSiN/Ti. 6. The method of claim 1, further comprising, after forming the anti-galvanic corrosion layer: performing a chemical mechanical polishing (CMP) process on the second metal layer to isolate adjacent portions of the second metal layer; and performing a cleaning process. 7. The method of claim 6, wherein performing the CMP process comprises oxidizing the second metal layer and removing portions of the oxidized second metal layer formed over the insulation layer using a polish slurry having a pH ranging from approximately 4 to approximately 6. 8. The method of claim 7, wherein the CMP process comprises adding an oxidizer of approximately 2 wt % to approximately 6 wt % to oxidize the second metal layer, the polish slurry comprising colloidal silica or aluminum oxide-based polish particles. 9. The method of claim 6, wherein performing the cleaning process comprises adding one selected from a group consisting of a metal corrosion inhibitor, an amine-based hydrazine, and hydrogen fluoride (HF), to a deionized water cleaning solution such that the cleaning solution is a basic solution. 10. The method of claim 9, wherein the metal corrosion inhibitor comprises methyl gallate. 11. A method for forming a metal line in a semiconductor device, the method comprising: providing a substrate including an insulation layer having a plurality of trenches formed therein; forming a barrier metal layer over the insulation layer and the trenches; and forming a metal layer including a first metal over the barrier metal layer, the metal layer filling the trenches, wherein a gas including a second metal is supplied when forming the metal layer to form an anti-galvanic corrosion layer on an interface between the barrier metal layer and the metal layer. 12. The method of claim 11, wherein the anti-galvanic corrosion layer comprises an alloy layer including a combination of the first and second metals. 13. The method of claim 11, wherein the first metal and the second metal have opposite polarities. 14. The method of claim 11, wherein the first metal comprises aluminum (Al) and the second metal comprises copper (Cu). 15. The method of claim 11, wherein the barrier metal layer comprises a stack structure comprising a material selected from a group consisting of titanium (Ti)/titanium nitride (TiN), Ti/TiN/Ti, tantalum (Ta)/tantalum nitride (TaN), Ta/TaN/Ta, Ti/titanium silicon nitride (TiSiN), and Ti/TiSiN/Ti. 16. The method of claim 11, further comprising, after forming the metal layer: performing a chemical mechanical polishing (CMP) process on the metal layer to isolate adjacent portions of the metal layer; and performing a cleaning process. 17. The method of claim 16, wherein performing the CMP process comprises oxidizing the metal layer and removing portions of the oxidized metal layer formed over the insulation layer using a polish slurry having a pH ranging from approximately 4 to approximately 6. 18. The method of claim 17, wherein the CMP process comprises adding an oxidizer of approximately 2 wt % to approximately 6 wt % to oxidize the metal layer, the polish slurry comprising colloidal silica or aluminum oxide-based polish particles. 19. The method of claim 16, wherein performing the cleaning process comprises adding one selected from a group consisting of a metal corrosion inhibitor, an amine-based hydrazine, and hydrogen fluoride (HF), to a deionized water cleaning solution such that the cleaning solution is a basic solution. 20. The method of claim 19, wherein the metal corrosion inhibitor comprises methyl gallate.
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