초록 ▼

An LCD array substrate includes a plurality of gate lines arranged in a first direction; a plurality of data lines arranged in a second direction to cross the plurality of gate lines; a semiconductor layer formed at overlapping regions of the gate lines and the data lines and extending a predetermin

An LCD array substrate includes a plurality of gate lines arranged in a first direction; a plurality of data lines arranged in a second direction to cross the plurality of gate lines; a semiconductor layer formed at overlapping regions of the gate lines and the data lines and extending a predetermined length from the overlapping regions over the gate lines; a drain electrode spaced apart from the overlapping regions of the gate and data lines and disposed partially in contact with the semiconductor layer, the drain electrode having ends extended beyond the semiconductor layer and the gate line; and a pair of pixel electrodes disposed on opposing sides of the gate line and electrically connected with the drain electrode.

대표청구항 ▼

What is claimed is: 1. An LCD array substrate, comprising: a plurality of gate lines arranged in a first direction; a plurality of data lines arranged in a second direction to cross the plurality of gate lines, a pixel region being defined by the gate line and the data line and including a first re

What is claimed is: 1. An LCD array substrate, comprising: a plurality of gate lines arranged in a first direction; a plurality of data lines arranged in a second direction to cross the plurality of gate lines, a pixel region being defined by the gate line and the data line and including a first region and a second region divided by the gate line; a semiconductor layer formed at overlapping regions of the gate lines and the data lines and extending a predetermined length from the overlapping regions over the gate lines; a drain electrode spaced apart from the overlapping regions of the gate and data lines and disposed partially in contact with the semiconductor layer, the drain electrode having ends extended beyond sides of the gate line; and a pixel electrode electrically connected with the ends of the drain electrode and overlapping at least a portion of the gate line, wherein the pixel electrode is formed in the first and second regions crossing the gate line, wherein the pixel region is defined to be overlapped with the gate line passing through the pixel region such that the pixel electrode extends over the gate line. 2. The LCD array substrate according to claim 1, wherein the ends of the drain electrode are extended beyond the semiconductor layer region. 3. The LCD array substrate according to claim 1, wherein the pixel region is defined by a pair of adjacent ones of the data lines and regions adjacent to one of the gate lines crossed with the pair of data lines. 4. The LCD array substrate according to claim 1, wherein the pixel electrode does not extend over the semiconductor layer. 5. The LCD array substrate according to claim 1, wherein the gate line and the pixel electrode function as first and second electrodes of a storage capacitor. 6. The LCD array substrate according to claim 1, wherein a portion of the semiconductor layer between the data line and the drain electrode defines a channel allowing a signal to be transferred from the data line to the drain electrode according to a signal from the gate line. 7. A fabrication method of an LCD array substrate, comprising the steps of: forming a plurality of gate lines on a substrate; sequentially forming a gate insulating film and a semiconductor layer on the substrate on which the gate lines are formed; forming a plurality of data lines and a drain electrode on the semiconductor layer; forming a passivation layer on an entire surface of the substrate having the data lines, the drain electrode, the gate lines, and the semiconductor layer; forming a contact hole in the passivation layer formed on both ends of the drain electrode; and forming a pair of pixel electrodes electrically connected with the drain electrode through the contact hole. 8. The fabrication method according to claim 7, wherein the semiconductor layer is patterned to be formed at an overlapping region of the gate line and the data line and to be further extended from the data line over the gate line. 9. The fabrication method according to claim 7, wherein the pair of pixel electrodes are formed within a pixel region defined by a pair of adjacent data lines and regions adjacent to a one of gate lines crossed with the pair of data lines. 10. The fabrication method according to claim 9, wherein the pair of pixel electrodes are formed spaced apart by predetermined intervals in upward and downward directions from the gate line passing through the pixel region. 11. The fabrication method according to claim 7, wherein the ends of the drain electrode are extended beyond the semiconductor layer. 12. A fabrication method of an LCD array substrate, comprising the steps of: forming a plurality of gate lines on a substrate; sequentially forming a gate insulating film and a semiconductor layer on the substrate on which the gate lines are formed; forming a plurality of data lines and a drain electrode on the semiconductor layer, a pixel region being defined by the gate line and the data line and including a first region and a second region divided by the gate line; forming a passivation layer on an entire surface of the substrate having the data lines, the drain electrode, the gate lines, and the semiconductor layer; forming a contact hole in the passivation layer formed on both ends of the drain electrode; and forming a pixel electrode electrically connected with the drain electrode through the contact hole and overlapping a corresponding one of the gate lines, wherein the pixel electrode is formed in the first and second regions crossing the gate line, wherein the pixel region is defined to be overlapped with the gate line passing through the pixel region such that the pixel electrode extends over the gate line. 13. The fabrication method according to claim 12, wherein the semiconductor layer is patterned to be formed at an overlapping region of the gate line and the data line and to be further extended from the data line over the gate line. 14. The fabrication method according to claim 12, wherein the pixel region is defined by a pair of adjacent data lines and regions adjacent to a one of the gate lines crossed with the pair of data lines. 15. The fabrication method according to claim 12, wherein the pixel electrode does not extend over the semiconductor layer. 16. The fabrication method according to claim 12, wherein the ends of the drain electrode are extended beyond the semiconductor layer.