IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
UP-0955275
(2007-12-12)
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등록번호 |
US-7655564
(2010-03-31)
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발명자
/ 주소 |
- Shinriki, Hiroshi
- Jeong, Daekyun
|
출원인 / 주소 |
|
대리인 / 주소 |
Knobbe, Martens, Olson & Bear LLP
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인용정보 |
피인용 횟수 :
18 인용 특허 :
118 |
초록
▼
A method of forming a Ta—Ru metal liner layer for Cu wiring includes: (i) conducting atomic deposition of Ta X times, each atomic deposition of Ta being accomplished by a pulse of hydrogen plasma, wherein X is an integer such that a surface of an underlying layer is not covered with Ta partic
A method of forming a Ta—Ru metal liner layer for Cu wiring includes: (i) conducting atomic deposition of Ta X times, each atomic deposition of Ta being accomplished by a pulse of hydrogen plasma, wherein X is an integer such that a surface of an underlying layer is not covered with Ta particles; (ii) after step (i), conducting atomic deposition of Ru Y times, each atomic deposition of Ru being accomplished by a pulse of hydrogen plasma, wherein Y is an integer such that the Ta particles are not covered with Ru particles; and (iii) repeating steps (i) and (ii) Z times, thereby forming a Ta—Ru metal liner layer on a Cu wiring substrate.
대표청구항
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What is claimed is: 1. A method of forming a Ta—Ru metal liner layer for Cu wiring, comprising: (i) conducting atomic deposition of Ta X times, each atomic deposition of Ta being accomplished by a pulse of hydrogen plasma, wherein X is an integer such that a surface of an underlying layer is
What is claimed is: 1. A method of forming a Ta—Ru metal liner layer for Cu wiring, comprising: (i) conducting atomic deposition of Ta X times, each atomic deposition of Ta being accomplished by a pulse of hydrogen plasma, wherein X is an integer such that a surface of an underlying layer is not covered with Ta particles; (ii) after step (i), conducting atomic deposition of Ru Y times, each atomic deposition of Ru being accomplished by a pulse of hydrogen plasma, wherein Y is an integer such that the Ta particles are not covered with Ru particles; and (iii) repeating steps (i) and (ii) Z times, thereby forming a Ta—Ru metal liner layer on a Cu wiring substrate. 2. The method according to claim 1, wherein Z is an integer of 5 to 10. 3. The method according to claim 1, wherein the hydrogen plasma in steps (i) and (ii) is generated by applying RF power to a gas containing hydrogen. 4. The method according to claim 1, wherein the Cu wiring substrate on which the Ta—Ru metal liner layer is formed is comprised of a metal film, a metal silicide film, and dielectric film. 5. The method according to claim 1, wherein X is an integer of 1 or 2, and Y is a integer of 1 to 10. 6. The method according to claim 5, wherein X is an integer of 1, and Y is an integer of 2 to 6. 7. The method according to claim 1, further comprising, after step (iii): (iv) changing X, Y, and Z, and conducting steps (i) to (iii), thereby forming a second metal layer on the Ta—Ru metal liner layer which is a first metal layer. 8. The method according to claim 7, further comprising, after step (iv): (v) changing X, Y, and Z, and conducting steps (i) to (iii), thereby forming a third metal layer on the second metal liner layer. 9. The method according to claim 8, wherein Y for the second metal layer is zero, and X for the third metal layer is zero. 10. The method according to claim 8, wherein a ratio of X/Y for the second metal layer is greater than a ratio of X/Y for each of the first and third metal layers. 11. The method according to claim 8, wherein a ratio of X/Y for the third metal layer is smaller than a ratio of X/Y for each of the first and second metal layers. 12. The method according to claim 9, where X, Y, and Z for the first metal layer are X1, Y1, and Z1, X, Y, and Z for the second metal layer are X2, Y2, and Z2, X, Y, and Z for the third metal layer are X3, Y3, and Z3, wherein X1=1, Y1=2-10, Z1=5-10, X2=1, Y2=0, Z2=30-60, X3=0, Y3=1, and Z3=50-100. 13. The method according to claim 1, wherein step (i) comprises supplying a precursor vapor containing Ta into a reaction chamber and applying a pulse of hydrogen plasma to the vapor X times. 14. The method according to claim 13, wherein the precursor vapor containing Ta is at least one selected from the group consisting of TAIMATA (Tertiaryamylimidotris-(dimethylamido)tantalum), TBTDET (Ta(N-i-C4H9)[N(C2H5)2]3), and PDMAT (Ta[N(CH3)2]5). 15. The method according to claim 1, wherein step (ii) comprises supplying a precursor vapor containing Ru into a reaction chamber and applying a pulse of hydrogen plasma to the vapor Y times. 16. The method according to claim 15, wherein the precursor vapor containing Ru is β-diketone-coordinated ruthenium compound.
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