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특허 상세정보

Electroless deposition process on a silicon contact

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01L-021/44   
미국특허분류(USC) 438/678; 257/E21.006
출원번호 UP-0385043 (2006-03-20)
등록번호 US-7659203 (2010-04-02)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Patterson & Sheridan
인용정보 피인용 횟수 : 10  인용 특허 : 152
초록

Embodiments as described herein provide methods for depositing a material on a substrate during electroless deposition processes, as well as compositions of the electroless deposition solutions. In one embodiment, the substrate contains a contact aperture having an exposed silicon contact surface. In another embodiment, the substrate contains a contact aperture having an exposed silicide contact surface. The apertures are filled with a metal contact material by exposing the substrate to an electroless deposition process. The metal contact material may co...

대표
청구항

The invention claimed is: 1. A method for depositing a material on a substrate, comprising: positioning a substrate within a process chamber, wherein the substrate comprises an aperture containing an exposed silicon contact surface; exposing the substrate to a preclean process to remove native oxides or contaminants from the exposed silicon contact surface; and exposing the substrate to a first electroless deposition process to form a metal-containing layer on the exposed silicon contact surface, wherein the metal-containing layer comprises cobalt, nick...

이 특허에 인용된 특허 (152)

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