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Wafer attracting plate 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • 13-03
출원번호 UP-0331222 (2009-01-22)
등록번호 US-D609652 (2010-04-02)
우선권정보 JP-2008-018761(2008-07-22)
발명자 / 주소
  • Nagasaka, Munetoshi
  • Ogasawara, Ikuo
  • Shinohara, Eiichi
출원인 / 주소
  • Tokyo Electron Limited
대리인 / 주소
    Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
인용정보 피인용 횟수 : 88  인용 특허 : 8

초록

초록이 없습니다.

대표청구항

CLAIM The ornamental design for wafer attracting plate, as shown and described.

이 특허에 인용된 특허 (8)

  1. Hayashi,Daisuke, Attracting disc for an electrostatic chuck for semiconductor production.
  2. Sasaki,Yasuharu; Kosakai,Mamoru, Attracting plate of an electrostatic chuck for semiconductor manufacturing.
  3. Weldon, Edwin C.; Collins, Kenneth S.; Donde, Arik; Lue, Brian; Maydan, Dan; Steger, Robert J.; Dyer, Timothy; Kumar, Ananda H.; Veytser, Alexander M.; Narendrnath, Kadthala R.; Kats, Semyon L.; Khol, Electrostatic chuck having composite dielectric layer and method of manufacture.
  4. Shamouilian Shamouil ; Kholodenko Arnold ; Kats Semyon ; Sherstinsky Semyon ; Clinton Jon ; Bedi Surinder, Electrostatic chuck with improved temperature control and puncture resistance.
  5. Sogard, Michael, Gas cooled electrostatic pin chuck for vacuum applications.
  6. Sun,Jennifer Y.; Thach,Senh; Dempster,James; Xu,Li; Pham,Thanh N., Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate.
  7. Yamaguchi, Akira; Tomita, Hideshi, Highly heat-resistant plasma etching electrode and dry etching device including the same.
  8. Lee, Keum-Joo, Wafer spin drying apparatus with a plurality of supply nozzles and methods for using the same.

이 특허를 인용한 특허 (88)

  1. Ootsuka, Fumio, 3D stacked multilayer semiconductor memory using doped select transistor channel.
  2. He, Zhian, Anisotropic high resistance ionic current source (AHRICS).
  3. Kagajwala, Burhanuddin; Buckalew, Bryan L.; Chua, Lee Peng; Berke, Aaron; Rash, Robert; Mayer, Steven T., Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity.
  4. Oosterlaken, Theodorus; de Ridder, Chris; Jdira, Lucian, Apparatus and method for manufacturing a semiconductor device.
  5. Kamiya, Tatsuo, Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum.
  6. Buckalew, Bryan L.; Mayer, Steven T.; Porter, David; Ponnuswamy, Thomas A., Apparatus for advanced packaging applications.
  7. Buckalew, Bryan L.; Mayer, Steven T.; Porter, David; Ponnuswamy, Thomas A., Apparatus for advanced packaging applications.
  8. den Hartog Besselink, Edwin; Garssen, Adriaan; Dirkmaat, Marco, Cassette holder assembly for a substrate cassette and holding member for use in such assembly.
  9. Zaitsu, Masaru; Fukazawa, Atsuki; Fukuda, Hideaki, Continuous process incorporating atomic layer etching.
  10. He, Zhian; Zhou, Jian; Feng, Jingbin; Reid, Jonathan D.; Ghongadi, Shantinath, Control of electrolyte flow dynamics for uniform electroplating.
  11. Mayer, Steven T.; Porter, David W., Control of electrolyte hydrodynamics for efficient mass transfer during electroplating.
  12. Mayer, Steven T.; Porter, David W., Control of electrolyte hydrodynamics for efficient mass transfer during electroplating.
  13. Mayer, Steven T.; Porter, David W.; Goh, Edwin; Buckalew, Bryan L.; Rash, Robert, Control of electrolyte hydrodynamics for efficient mass transfer during electroplating.
  14. Abraham, Richard; Mayer, Steven T.; Buckalew, Bryan L.; Rash, Robert, Cross flow manifold for electroplating apparatus.
  15. Abraham, Richard; Mayer, Steven T.; Buckalew, Bryan L.; Rash, Robert, Cross flow manifold for electroplating apparatus.
  16. Raisanen, Petri; Shero, Eric; Haukka, Suvi; Milligan, Robert Brennan; Givens, Michael Eugene, Deposition of metal borides.
  17. Zhu, Chiyu; Shrestha, Kiran; Haukka, Suvi, Deposition of metal borides.
  18. Motoyama, Yutaka; Fukushima, Kohei, Dummy wafer.
  19. Motoyama, Yutaka; Fukushima, Kohei, Dummy wafer.
  20. Motoyama, Yutaka; Fukushima, Kohei, Dummy wafer.
  21. Graham, Gabriel Hay; Hiester, Jacob Lee; Chua, Lee Peng; Buckalew, Bryan L., Dynamic modulation of cross flow manifold during electroplating.
  22. Graham, Gabriel Hay; Buckalew, Bryan L.; Mayer, Steven T.; Rash, Robert; Fortner, James Isaac; Chua, Lee Peng, Edge flow element for electroplating apparatus.
  23. Fukushima, Makoto; Yasuda, Hozumi; Nabeya, Osamu; Watanabe, Katsuhide; Namiki, Keisuke, Elastic membrane for semiconductor wafer polishing.
  24. Fukushima, Makoto; Yasuda, Hozumi; Nabeya, Osamu; Watanabe, Katsuhide; Namiki, Keisuke, Elastic membrane for semiconductor wafer polishing.
  25. Nagakubo, Keiichi, Electrode member for a plasma processing apparatus.
  26. Kuwabara, Yusei; Nagakubo, Keiichi, Electrode plate for a plasma processing apparatus.
  27. Jang, Hyun Soo; Lee, Jeong Ho; Kim, Young Hoon; Kim, Jong Su, Electrode plate for semiconductor manufacturing apparatus.
  28. Mayer, Steven T.; Porter, David; Rash, Robert, Electroplating flow shaping plate having offset spiral hole pattern.
  29. Smith, Eryn, Electrostatic carrier tray.
  30. Mayer, Steven T.; Buckalew, Bryan L.; Fu, Haiying; Ponnuswamy, Thomas; Diaz Camilo, Hilton; Rash, Robert; Porter, David W., Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating.
  31. Mayer, Steven T.; Buckalew, Bryan L.; Fu, Haiying; Ponnuswamy, Thomas; Diaz Camilo, Hilton; Rash, Robert; Porter, David W., Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating.
  32. Wang, Qunhua; Tiner, Robin L., Flow blocker plate.
  33. Kuwabara, Yusei; Nagakubo, Keiichi, Focusing ring.
  34. Kuwabara, Yusei; Nagakubo, Keiichi, Focusing ring.
  35. Mizukami, Shunsuke, Focusing ring.
  36. Yoshimura, Akihiro; Miyagawa, Masaaki; Sato, Tetsuji, Focusing ring.
  37. Milligan, Robert Brennan, Formation of boron-doped titanium metal films with high work function.
  38. Jang, Hyun Soo; Lee, Jeong Ho; Kim, Young Hoon; Jeon, Young Hyo, Gas dispersing plate for semiconductor manufacturing apparatus.
  39. Root, Bryan J.; Funk, William A., Grooved wire support for a probe test core.
  40. Aida, Koei, Heater block.
  41. Akana, Jody; Andre, Bartley K.; Aoyagi, Shota; Bataillou, Jeremy; Coster, Daniel J.; De Iuliis, Daniele; Hankey, M. Evans; Hill, Matthew David; Hoenig, Julian; Howarth, Richard P.; Ive, Jonathan P.; Kerr, Duncan Robert; Kole, Jared; Mag, Stefan; Merz, Nicholas George LeBreton; Myers, Scott A.; Pope, Benjamin J.; Rao, Matthew; Rohrbach, Matthew Dean; Russell-Clarke, Peter; Silvanto, Mikael; Stringer, Christopher J.; Tan, Tang Yew; Whang, Eugene Antony; Zörkendörfer, Rico, Input for an electronic device.
  42. Mori, Yoshinobu; Okabe, Akira, Lid for epitaxial growing device.
  43. Mayer, Steven; Feng, Jingbin; He, Zhian; Reid, Jonathan; Varadarajan, Seshasayee, Method and apparatus for electroplating.
  44. Mayer, Steven; Feng, Jingbin; He, Zhian; Reid, Jonathan; Varadarajan, Seshasayee, Method and apparatus for electroplating.
  45. Mayer, Steven; Feng, Jingbin; He, Zhian; Reid, Jonathan; Varadarajan, Seshasayee, Method and apparatus for electroplating.
  46. Reid, Jonathan; Buckalew, Bryan; He, Zhian; Park, Seyang; Varadarajan, Seshasayee; Pennington, Bryan; Ponnuswamy, Thomas; Breling, Patrick; Ibarreta, Glenn; Mayer, Steven, Method and apparatus for electroplating.
  47. Pore, Viljami, Method and apparatus for filling a gap.
  48. Pore, Viljami; Knaepen, Werner; Jongbloed, Bert; Pierreux, Dieter; Van Aerde, Steven R. A.; Haukka, Suvi; Fukuzawa, Atsuki; Fukuda, Hideaki, Method and apparatus for filling a gap.
  49. Pore, Viljami; Knaepen, Werner; Jongbloed, Bert; Pierreux, Dieter; Van Der Star, Gido; Suzuki, Toshiya, Method and apparatus for filling a gap.
  50. Suemori, Hidemi, Method for depositing dielectric film in trenches by PEALD.
  51. Kang, DongSeok, Method for depositing thin film.
  52. Takamure, Noboru; Okabe, Tatsuhiro, Method for forming Ti-containing film by PEALD using TDMAT or TDEAT.
  53. Shiba, Eiichiro, Method for forming aluminum nitride-based film by PEALD.
  54. Fukazawa, Atsuki, Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition.
  55. Fukazawa, Atsuki; Fukuda, Hideaki; Takamure, Noboru; Zaitsu, Masaru, Method for forming dielectric film in trenches by PEALD using H-containing gas.
  56. Kimura, Yosuke; de Roest, David, Method for forming film having low resistance and shallow junction depth.
  57. Ishikawa, Dai; Fukazawa, Atsuki, Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches.
  58. Namba, Kunitoshi, Method for forming silicon oxide cap layer for solid state diffusion process.
  59. Shiba, Eiichiro, Method for performing uniform processing in gas system-sharing multiple reaction chambers.
  60. Yamagishi, Takayuki; Suwada, Masaei; Tanaka, Hiroyuki, Method for positioning wafers in multiple wafer transport.
  61. Kato, Richika; Nakano, Ryu, Method for protecting layer by forming hydrocarbon-based extremely thin film.
  62. Kato, Richika; Okuro, Seiji; Namba, Kunitoshi; Nonaka, Yuya; Nakano, Akinori, Method for protecting layer by forming hydrocarbon-based extremely thin film.
  63. Zaitsu, Masaru, Method of atomic layer etching using functional group-containing fluorocarbon.
  64. Zaitsu, Masaru; Kobayashi, Nobuyoshi; Kobayashi, Akiko; Hori, Masaru; Kondo, Hiroki; Tsutsumi, Takayoshi, Method of cyclic dry etching using etchant film.
  65. Mayer, Steven T; Reid, Jonathan D., Method of electroplating using a high resistance ionic current source.
  66. Knaepen, Werner; Maes, Jan Willem; Jongbloed, Bert; Kachel, Krzysztof Kamil; Pierreux, Dieter; De Roest, David Kurt, Method of forming a structure on a substrate.
  67. Lee, Choong Man; Yoo, Yong Min; Kim, Young Jae; Chun, Seung Ju; Kim, Sun Ja, Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method.
  68. Chun, Seung Ju; Yoo, Yong Min; Choi, Jong Wan; Kim, Young Jae; Kim, Sun Ja; Lim, Wan Gyu; Min, Yoon Ki; Lee, Hae Jin; Yoo, Tae Hee, Method of processing a substrate and a device manufactured by using the method.
  69. Kohen, David; Profijt, Harald Benjamin, Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures.
  70. Raisanen, Petri; Givens, Michael Eugene, Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures.
  71. Zhu, Chiyu; Asikainen, Timo; Milligan, Robert Brennan, NbMC layers.
  72. Mayer, Steven; Ghongadi, Shantinath; Ganesan, Kousik; He, Zhian; Feng, Jingbin, Plating method and apparatus with multiple internally irrigated chambers.
  73. Margetis, Joe; Tolle, John; Bartlett, Gregory; Bhargava, Nupur, Process for forming a film on a substrate using multi-port injection assemblies.
  74. Alokozai, Fred; Milligan, Robert Brennan, Process gas management for an inductively-coupled plasma deposition reactor.
  75. Feng, Jingbin; Stowell, Marshall, Segmented electroplating anode and anode segment.
  76. Zhu, Chiyu, Selective film deposition method to form air gaps.
  77. Kim, Young Jae; Choi, Seung Woo; Yoo, Yong Min, Semiconductor device and manufacturing method thereof.
  78. Arai, Izumi, Single-and dual-chamber module-attachable wafer-handling chamber.
  79. Xie, Qi; de Roest, David; Woodruff, Jacob; Givens, Michael Eugene; Maes, Jan Willem; Blanquart, Timothee, Source/drain performance through conformal solid state doping.
  80. Tolle, John, Structures and devices including germanium-tin films and methods of forming same.
  81. Choi, Seung Woo; Noh, Hyung Wook; Woo, Jeong Jun; Kim, Dae Youn; Jang, Hyun Soo, Substrate supporter for semiconductor deposition apparatus.
  82. Jang, Hyun Soo; Kim, Dae Youn; Lee, Jeong Ho; Lee, Seung Seob; Kwon, Hak Yong, Substrate supporter for semiconductor deposition apparatus.
  83. Funk, William A.; Flanders, Dennis; Dunklee, John L.; Root, Bryan J., Support for a probe test core.
  84. Jeong, Sang Jin; Han, Jeung Hoon; Choi, Young Seok; Park, Ju Hyuk, Susceptor for semiconductor substrate processing apparatus.
  85. Yamagishi, Takayuki; Sato, Kazuo; Tsuji, Naoto, Top plate.
  86. Morisaki, Eisuke; Machiyama, Wataru; Kobayashi, Hirokatsu; Harashima, Masayuki; Sano, Yukio, Wafer holder for manufacturing semiconductor.
  87. Tamaso, Hideto, Wafer holder for stepper.
  88. Nguyen, Phuong Van, Wafer polishing pad holder.
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