IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
UP-0131258
(2005-05-18)
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등록번호 |
US-7679429
(2010-04-21)
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우선권정보 |
JP-2004-156487(2004-05-26) |
발명자
/ 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
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인용정보 |
피인용 횟수 :
6 인용 특허 :
6 |
초록
▼
A boost circuit includes: first transistors connected in series between a voltage input node and a voltage output node to constitute a charge transfer circuit; and first capacitors, one ends of which are coupled to the respective connection nodes between the first transistors, the other ends thereof
A boost circuit includes: first transistors connected in series between a voltage input node and a voltage output node to constitute a charge transfer circuit; and first capacitors, one ends of which are coupled to the respective connection nodes between the first transistors, the other ends thereof being applied with clocks with plural phases, wherein a gate of a certain stage transistor corresponding to one of the first transistors in the charge transfer circuit is coupled to a drain of another stage transistor corresponding to another one of the first transistors, which is disposed nearer to the voltage output node than the certain stage transistor and driven by the same phase clock as that of the certain stage transistor, the certain stage transistor being disposed nearer to the voltage output node than an initial stage transistor.
대표청구항
▼
What is claimed is: 1. A boost circuit comprising: first transistors connected in series electrically between a voltage input node and a voltage output node to constitute a first charge transfer circuit, the first transistors being connected in series along current paths thereof, the first transist
What is claimed is: 1. A boost circuit comprising: first transistors connected in series electrically between a voltage input node and a voltage output node to constitute a first charge transfer circuit, the first transistors being connected in series along current paths thereof, the first transistors including an initial stage transistor connected to the voltage input node, a second transistor electrically connected in series between the voltage output node and the initial stage transistor, a third transistor electrically connected in series between the voltage output node and the second transistor, an output stage transistor having a source connected to the voltage output node, and a preceding stage transistor having a source connected to a drain of the output stage transistor; a fourth transistor having a drain connected to the drain of the output stage transistor; a fifth transistor having a drain connected to a source of the fourth transistor; first capacitors, one ends of the first capacitors being coupled to the respective connection nodes between the first transistors, the other ends of the first capacitors being applied with clocks with plural phases, the first capacitors including a second capacitor and a third capacitor, one end of the second capacitor being coupled to a drain of the second transistor, and one end of the third capacitor being coupled to a drain of the third transistor; a fourth capacitor having one end connected to the source of the fourth transistor and the outer end applied with a third clock; and a fifth capacitor having one end connected to a source of the fifth transistor and the other end applied with a fourth clock, a phase of the fourth clock being different from a phase of the third clock; wherein a gate of the second transistor is coupled to the drain of the third transistor, and the other end of the second capacitor is applied with a first clock, the other end of the third capacitor is applied with a second clock, and a phase of the first clock is the same as a phase of the second clock. 2. The boost circuit according to claim 1, wherein the first charge transfer circuit has N (where N is an integer equal to 3 or more) transistors corresponding to the first transistors, and wherein N−1 capacitors corresponding to the first capacitors are coupled to the respective connection nodes in the first transistors, even numbered capacitors and odd numbered capacitors being driven by clocks with different phases from each other, and wherein a gate of i-th transistor (where “i” is an integer smaller than N−2, which is counted from the voltage input node) corresponding to one of the first transistors is coupled to the connection node between (i+1)-th transistor and (i+2)-th transistor. 3. The boost circuit according to claim 1, wherein a gate and a drain of the initial stage transistor are connected to each other. 4. The boost circuit according to claim 1, wherein capacitance of the fourth capacitor is set to be smaller than that of each of the first capacitors, and capacitance of the fifth capacitor is set to be smaller than that of each of the first capacitors. 5. The boost circuit according to claim 1, wherein drivability of the fourth transistor is set to be less than that of each of the first transistors, and drivability of the fifth transistor is set to be less than that of each of the first transistors. 6. The boost circuit according to claim 1, further comprising: a voltage limiter device disposed between the source of the fifth transistor and the voltage output node for limiting voltage boost in the source of the fifth transistor. 7. The boost circuit according to claim 1, wherein a part of the first charge transfer circuit comprises sixth transistors included in the first transistors, the sixth transistors being connected in series along current paths thereof, and each of the sixth transistors has a gate and a drain connected to each other. 8. The boost circuit according to claim 1, further comprising a second charge transfer circuit disposed in parallel with at least a part of the first charge transfer circuit between the voltage input node and the voltage output node. 9. The boost circuit according to claim 8, wherein the second charge transfer circuit is formed of diode-connected transistors connected in series. 10. The boost circuit according to claim 8, wherein one of the two charge transfer circuits is disposed in parallel with a part of the other. 11. The boost circuit according to claim 8, wherein one end of each of at least a part of the first capacitors is coupled to both the first charge transfer circuit and the second charge transfer circuit. 12. The boost circuit according to claim 1, wherein the first charge transfer circuit has N (where N is an integer equal to 3 or more) transistors corresponding to the first transistors, and wherein N−1 capacitors corresponding to the first capacitors are coupled to the respective connection nodes in the first transistors, even numbered capacitors and odd numbered capacitors being driven by clocks with different phases from each other, and wherein a gate of i-th transistor (where “i” is an integer smaller than N−2, which is counted from the voltage input node) corresponding to one of the first transistors is coupled to the connection node between (i+3)-th transistor and (i+4)-th transistor. 13. The boost circuit according to claim 1, wherein the drain of the third transistor is connected to a node other than the gate of the third transistor. 14. The boost circuit according to claim 1, wherein the phase of the first clock is the same as a phase of a clock applied to the gate of the second transistor. 15. The boost circuit according to claim 1, wherein a gate and a drain of the fifth transistors are connected to each other. 16. A boost circuit comprising: first transistors connected in series electrically between a voltage input node and a voltage output node to constitute a first charge transfer circuit, the first transistors being connected in series along current paths thereof, and including an initial stage transistor connected to the voltage input node, a second transistor electrically connected in series between the voltage output node and the initial stage transistor, a third transistor electrically connected in series between the voltage output node and the second transistor, an output stage transistor having a source connected to the voltage output node, and a preceding stage transistor having a source connected to a drain of the output stage transistor; a fourth transistor having a drain connected to the drain of the output stage transistor; a fifth transistor having a drain connected to a source of the fourth transistor; first capacitors, one ends of the first capacitors being coupled to the respective connection nodes between the first transistors, the other ends of the first capacitors being applied with clocks with plural phases, the first capacitors including a second capacitor and a third capacitor, one end of the second capacitor being coupled to a drain of the second transistor, and one end of the third capacitor being coupled to a drain of the third transistor; a fourth capacitor having one end connected to the source of the fourth transistor and the outer end applied with a third clock; and a fifth capacitor having one end connected to a source of the fifth transistor and the other end applied with a fourth clock, a phase of the fourth clock being different from a phase of the third clock; wherein a gate of the second transistor is coupled to the drain of the third transistor and the other end of the third capacitor is driven by a first clock, and a phase of the first clock is the same as a phase of a clock driving the other end of the second capacitor. 17. The boost circuit according to claim 16, wherein the first charge transfer circuit has N (where N is an integer equal to 3 or more) transistors corresponding to the first transistors, and wherein N−1 capacitors corresponding to the first capacitors are coupled to the respective connection nodes in the first transistors, even numbered capacitors and odd numbered capacitors being driven by clocks with different phases from each other, and wherein a gate of i-th transistor (where “i” is an integer smaller than N−2, which is counted from the voltage input node) corresponding to one of the first transistors is coupled to the connection node between (i+1)-th transistor and (i+2)-th transistor. 18. A boost circuit comprising: first transistors connected in series electrically between a voltage input node and a voltage output node to constitute a first charge transfer circuit, the first transistors being connected in series along current paths thereof, and including an initial stage transistor connected to the voltage input node, a second transistor electrically connected in series between the voltage output node and the initial stage transistor, a third transistor electrically connected in series between the voltage output node and the second transistor, an output stage transistor having a source connected to the voltage output node, and a preceding stage transistor having a source connected to a drain of the output stage transistor; a fourth transistor having a drain connected to the drain of the output stage transistor; a fifth transistor having a drain connected to a source of the fourth transistor; first capacitors, one ends of the first capacitors being coupled to the respective connection nodes between the first transistors, the other ends of the first capacitors being applied with clocks with plural phases, the first capacitors including a second capacitor and a third capacitor, one end of the second capacitor being coupled to a drain of the second transistor, and one end of the third capacitor being coupled to a drain of the third transistor; a fourth capacitor having one end connected to the source of the fourth transistor and the outer end applied with a third clock; and a fifth capacitor having one end connected to a source of the fifth transistor and the other end applied with a fourth clock, a phase of the fourth clock being different from a phase of the third clock; wherein a gate of a second transistor is coupled to the drain of the third transistor, and wherein the first charge transfer circuit has N (where N is an integer equal to 3 or more) transistors corresponding to the first transistors, and wherein N−1 capacitors corresponding to the first capacitors are coupled to the respective connection nodes in the first transistors, even numbered capacitors and odd numbered capacitors being driven by clocks with different phases from each other, and wherein a gate of i-th transistor (where “i” is an integer smaller than N−2, which is counted from the voltage input node) corresponding to one of the first transistors is coupled to the connection node between (i+1)-th transistor and (i+2)-th transistor. 19. The boost circuit according to claim 1, wherein the source of the fifth transistor is coupled to a gate of the output stage transistor. 20. The boost circuit according to claim 1, wherein the phase of the third clock is the same as that of one of the first clock and the second clock, and the phase of the fourth clock is the same as that of the other of the first clock and the second clock. 21. The boost circuit according to claim 1, wherein all of the first transistors have the same conductivity type. 22. The boost circuit according to claim 1, wherein all of the first transistors, the fourth transistor, and the fifth transistor have the same conductivity type. 23. The boost circuit according to claim 2, wherein the source of the fifth transistor is coupled to a gate of the output stage transistor and the drain of the fifth transistor is coupled to a gate of the preceding stage transistor.
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