Resist film removing method
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IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
UP-0543819
(2006-10-06)
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등록번호 |
US-7691210
(2010-05-20)
|
우선권정보 |
JP-2005-296632(2005-10-11) |
발명자
/ 주소 |
- Orii, Takehiko
- Sekiguchi, Kenji
- Iino, Tadashi
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출원인 / 주소 |
|
대리인 / 주소 |
Smith, Gambrell & Russell, LLP
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인용정보 |
피인용 횟수 :
0 인용 특허 :
1 |
초록
▼
A resist film removing method for removing a resist film disposed on a substrate and having a cured layer at a surface includes covering the surface of the resist film with a protection film; causing popping in the resist film covered with the protection film; denaturing the resist film and the prot
A resist film removing method for removing a resist film disposed on a substrate and having a cured layer at a surface includes covering the surface of the resist film with a protection film; causing popping in the resist film covered with the protection film; denaturing the resist film and the protection film after causing popping, to be soluble in water; and performing purified water cleaning to remove from the substrate the resist film and the protection film denatured to be soluble in water.
대표청구항
▼
What is claimed is: 1. A computer readable storage medium that stores a control program for execution on a computer, wherein the control program, when executed, causes the computer to control a processing apparatus to conduct a resist film removing method for removing a resist film disposed on a su
What is claimed is: 1. A computer readable storage medium that stores a control program for execution on a computer, wherein the control program, when executed, causes the computer to control a processing apparatus to conduct a resist film removing method for removing a resist film disposed on a substrate and having a cured layer at a surface, the method comprising: covering the surface of the resist film with a protection film; causing popping in the resist film covered with the protection film, thereby breaking the cured layer, while leaving the resist film covered with the protection film and preventing droplets of the resist film generated by said popping from bursting through the protection film; and removing both of the resist film and the protection film together from the substrate by a predetermined liquid after said step of causing popping. 2. The computer readable storage medium according to claim 1, wherein said removing the resist film and the protection film comprises denaturing the resist film and the protection film after said causing popping, to be soluble in water or an organic solvent, and then dissolving the resist film and the protection film by water or the organic solvent. 3. The computer readable storage medium according to claim 2, wherein a process using a process gas containing water vapor and ozone is performed on the resist film and the protection film in said denaturing the resist film and the protection film after said causing popping. 4. The computer readable storage medium according to claim 3, wherein the process using a process gas containing water vapor and ozone is performed in a state where the substrate is placed in an airtight chamber and a positive pressure is maintained inside the airtight chamber. 5. The computer readable storage medium according to claim 1, wherein the protection film comprises an elastic resin. 6. The computer readable storage medium according to claim 1, wherein the cured layer is a layer formed by ion implantation. 7. A computer readable storage medium that stores a control program for execution on a computer, wherein the control program, when executed, causes the computer to control a processing apparatus to conduct a resist film removing method for removing a resist film disposed on a substrate, the resist film having been subjected to a light exposure process, a development process, a heating process, and an ion implantation process in this order, and having a cured layer formed at a surface thereof by the ion implantation process, the method comprising: covering the surface of the resist film with a protection film consisting essentially of an elastic resin; heating the resist film covered with the protection film at a temperature higher than that of the heating process, thereby causing popping in the resist film and breaking the cured layer by said popping, while leaving the resist film covered with the protection film and preventing droplets of the resist film generated by said popping from bursting through the protection film; and dissolving the resist film and the protection film by a predetermined liquid after said step of popping, thereby removing both of the resist film and the protection film together from the substrate. 8. The computer readable storage medium according to claim 7, wherein the method further comprises: a step of denaturing the resist film and the protection film to be soluble in the predetermined liquid, which is water or an organic solvent, between said step of popping and dissolving. 9. The computer readable storage medium according to claim 8, wherein said denaturing comprises processing the resist film and the protection film by a process gas containing water vapor and ozone. 10. The computer readable storage medium according to claim 9, wherein said denaturing is performed in a state where the substrate is placed in an airtight chamber and a positive pressure is maintained inside the airtight chamber. 11. The computer readable storage medium according to claim 7, wherein the predetermined liquid for said dissolving is a chemical solution containing sulfuric acid and hydrogen peroxide solution. 12. The computer readable storage medium according to claim 7, wherein the elastic resin is a silicon-containing resist.
이 특허에 인용된 특허 (1)
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Motoi, Koji; Matsuo, Ryuichi; Muranaka, Takeshi; Murata, Takumi, Composite material and synthetic sleeper using the composite material.
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