IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
UP-0242574
(2005-10-04)
|
등록번호 |
US-7692157
(2010-05-20)
|
우선권정보 |
CA-2241779(1998-06-26) |
발명자
/ 주소 |
- Rougeot, Henri M.
- Jean, Alain
- Mani, Habib
- Shukri, Ziad Aziz
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
5 인용 특허 :
18 |
초록
▼
An x-ray image detector suitable for radiology has an active matrix substrate with scanning and read-out circuits. Over this active matrix substrate, which can be a two dimensional array of TFTs associated with a storage capacitance, there is deposited a photoreceptor made of a thin layer of amorpho
An x-ray image detector suitable for radiology has an active matrix substrate with scanning and read-out circuits. Over this active matrix substrate, which can be a two dimensional array of TFTs associated with a storage capacitance, there is deposited a photoreceptor made of a thin layer of amorphous selenium based multilayer structure. The photoreceptor is covered with a light-transparent electrode on top of which there is provided a scintillator. The indices of refraction of the scintillator and of the selenium based multilayer may be matched with the use of the biasing electrode.
대표청구항
▼
The invention claimed is: 1. A method of operating an indirect x-ray image detector suitable for radiology, having an active matrix substrate with scanning and read-out circuits, wherein over said active matrix substrate there is deposited a non-pixelated photoreceptor made of a co-planar thin laye
The invention claimed is: 1. A method of operating an indirect x-ray image detector suitable for radiology, having an active matrix substrate with scanning and read-out circuits, wherein over said active matrix substrate there is deposited a non-pixelated photoreceptor made of a co-planar thin layer of amorphous selenium based multilayer structure, said photoreceptor being covered with a light-transparent biasing electrode on top of which there is provided an x-ray conversion scintillator, characterized in that the photoreceptor is operated to convert light into electrical charges with no avalanche multiplication. 2. Method according to claim 1, in which the active matrix substrate is made of a two dimensional array of thin film transistors (TFT) which is associated with a storage capacitance and is provided with conduction pads with electric connection to the photoreceptor. 3. Method according to claim 2, in which the storage capacitance is set up as a part of the TFT architecture. 4. Method according to claim 2, in which the storage capacitance is set up as an integral part of the photoreceptor. 5. Method according to claim 2, in which the TFT are made of amorphous silicon. 6. Method according to claim 1, in which the amorphous selenium based multilayer structure is made of n-i-p or p-i-n type, wherein the n-layer is a hole blocking layer, the p-layer is an electron blocking layer and the i-layer sandwiched between the n and p layers is an amorphous selenium layer doped with chlorine and arsenic. 7. Method according to claim 6, wherein the i-layer of amorphous selenium is doped with 1-100 ppm of chlorine and 0.1-5% by wt. of arsenic. 8. Method according to claim 6, in which the n-layer is made of a thin selenium layer which is doped with an alkaline metal or an oxide or halogenide of said metal. 9. Method according to claim 8, in which the thin selenium layer is doped with the alkaline metal is selected from lithium, sodium, potassium and cesium. 10. Method according to claim 6, in which the p-layer is made of a thin layer of arsenic enriched amorphous selenium. 11. Method according to claim 10, in which the p-layer is enriched with arsenic to the level of 1-38% by wt. 12. Method according to claim 6, in which the light transparent biasing electrode is made as a co-planar indium tin oxide (ITO) layer and is positioned on top of the amorphous selenium based multilayer structure. 13. Method according to claim 6, in which the amorphous selenium based multilayer structure is made of the p-i-n type and the light transparent biasing electrode is set to a negative potential to provide the TFT with high voltage protection. 14. Method according to claim 6, in which the amorphous selenium based multilayer structure is made of the n-i-p type, and wherein there is also provided a high voltage protective device shunting the storage capacitance. 15. Method according to claim 1, in which the thickness of the multilayer structure is set up to be 5 to 20 μm. 16. Method according to claim 1, in which the biasing electrode is set up so that it also serves to match indices of refraction of the scintillator and the amorphous selenium based multilayer structure. 17. Method according to claim 1, in which the amorphous selenium based multilayer structure is optimized for electrical transport where dark current is below 200 pA/cm2 and residual image is less than 5%. 18. Method according to claim 1, in which the scintillator is made of a material selected from cesium iodide doped with sodium, or from a material selected from barium fluoride, calcium tungstate and sodium iodide, emitting in the blue spectrum. 19. Method according to claim 1, in which the photoreceptor of the amorphous selenium based multilayer structure, the biasing electrode and the scintillator are enclosed in a housing providing environmental, electric and mechanical protection. 20. Method according to claim 1, in which the photoreceptor is operated under an electric field of 5 to 50 v/μm.
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